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单个 IGBTs

制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度
FGA40T65UQDF

FGA40T65UQDF

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor

2,700 -
FGA40T65UQDF

数据表

- TO-3P-3, SC-65-3 Bulk Active NPT 650 V 120 A 1.67V @ 15V, 40A 231 W Through Hole 989µJ (on), 310µJ (off) Standard 80 A 306 nC 32ns/271ns - 400V, 40A, 6Ohm, 15V TO-3PN - 89 ns -55°C ~ 175°C (TJ)
FGA30N65SMD

FGA30N65SMD

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor

8,100 -
FGA30N65SMD

数据表

- TO-3P-3, SC-65-3 Bulk Active Field Stop 650 V 90 A 2.5V @ 15V, 30A 300 W Through Hole 716µJ (on), 208µJ (off) Standard 60 A 87 nC 14ns/102ns - 400V, 30A, 6Ohm, 15V TO-3PN - 35 ns -55°C ~ 175°C (TJ)
IRG4BC40KPBF

IRG4BC40KPBF

IRG4BC40 - DISCRETE IGBT WITHOUT

International Rectifier

9,723 -
IRG4BC40KPBF

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FGAF20N60SMD

FGAF20N60SMD

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor

314 -
FGAF20N60SMD

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJP60D0DPK-01#T0

RJP60D0DPK-01#T0

RJH60D0 - INSULATED GATE BIPOLAR

Renesas

1,052 -
RJP60D0DPK-01#T0

数据表

- TO-3P-3, SC-65-3 Bulk Obsolete - 600 V 90 A 2.2V @ 15V, 22A 140 W Through Hole - Standard 45 A 45 nC 35ns/90ns - 300V, 22A, 5Ohm, 15V TO-3P - - 150°C (TJ)
AUIRGSL30B60K

AUIRGSL30B60K

AUIRGSL30B60K - AUTOMOTIVE IGBT

International Rectifier

7,200 -
AUIRGSL30B60K

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
IRG6B330UDPBF

IRG6B330UDPBF

IRG6B330UD - IGBT WITH ANTI-PARA

International Rectifier

5,100 -
IRG6B330UDPBF

数据表

- TO-220-3 Bulk Obsolete Trench 330 V - 2.76V @ 15V, 120A 160 W Through Hole - Standard 70 A 85 nC 47ns/176ns - 196V, 25A, 10Ohm TO-220AB - 60 ns -40°C ~ 150°C (TJ)
ISL9V3036S3ST

ISL9V3036S3ST

IGBT, 360V, 17A, 1.58V, 300MJ, D

Fairchild Semiconductor

2,175 -
ISL9V3036S3ST

数据表

EcoSPARK® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active - 360 V - 1.6V @ 4V, 6A 150 W Surface Mount - Logic 21 A 17 nC -/4.8µs - 300V, 1kOhm, 5V TO-263AB - - -40°C ~ 175°C (TJ)
FGH40N60SFTU

FGH40N60SFTU

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor

13,230 -
FGH40N60SFTU

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FGAF40N60UFDTU

FGAF40N60UFDTU

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor

2,512 -
FGAF40N60UFDTU

数据表

- TO-3P-3 Full Pack Bulk Active - 600 V 160 A 3V @ 15V, 20A 100 W Through Hole 470µJ (on), 130µJ (off) Standard 40 A 77 nC 15ns/65ns - 300V, 20A, 10Ohm, 15V TO-3PF - 95 ns -55°C ~ 150°C (TJ)
IRG8P08N120KD-EPBF

IRG8P08N120KD-EPBF

IRG8P08N120 - DISCRETE IGBT WITH

International Rectifier

5,750 -
IRG8P08N120KD-EPBF

数据表

- TO-247-3 Bulk Obsolete - 1200 V 15 A 2V @ 15V, 5A 89 W Through Hole 300µJ (on), 300µJ (off) Standard 15 A 45 nC 20ns/160ns - 600V, 5A, 47Ohm, 15V TO-247AD - 50 ns -40°C ~ 150°C (TJ)
RJH60D2DPP-E0#T2

RJH60D2DPP-E0#T2

RJH60D2DPP - IGBT 600V 25A

Renesas Electronics Corporation

28,209 -
RJH60D2DPP-E0#T2

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FGBS3040E1-SN00390

FGBS3040E1-SN00390

FGBS3040 - SMART IGN-IGBT TO263-

Fairchild Semiconductor

399,871 -
FGBS3040E1-SN00390

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FGA30N60LSDTU

FGA30N60LSDTU

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor

551 -
FGA30N60LSDTU

数据表

- TO-3P-3, SC-65-3 Bulk Active Trench Field Stop 600 V 90 A 1.4V @ 15V, 30A 480 W Through Hole 1.1mJ (on), 21mJ (off) Standard 60 A 225 nC 18ns/250ns - 400V, 30A, 6.8Ohm, 15V TO-3P - 35 ns -55°C ~ 150°C (TJ)
FGA25S125P-SN00337

FGA25S125P-SN00337

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor

412 -
FGA25S125P-SN00337

数据表

- TO-3P-3, SC-65-3 Bulk Active Trench Field Stop 1250 V 75 A 2.35V @ 15V, 25A 250 W Through Hole 1.09mJ (on), 580µJ (off) Standard 50 A 204 nC 24ns/502ns - 600V, 25A, 10Ohm, 15V TO-3PN - - -55°C ~ 175°C (TJ)
IRGP4078DPBF

IRGP4078DPBF

IRGP4078 - DISCRETE IGBT WITH AN

International Rectifier

800 -
IRGP4078DPBF

数据表

- TO-247-3 Bulk Obsolete Trench 600 V 150 A 2.2V @ 15V, 50A 278 W Through Hole 1.1mJ (off) Standard 74 A 92 nC -/116ns - 400V, 50A, 10Ohm, 15V TO-247AC - - -55°C ~ 175°C (TJ)
IRG7PH35U-EP

IRG7PH35U-EP

IRG7PH35 - DISCRETE IGBT WITHOUT

International Rectifier

8,600 -
IRG7PH35U-EP

数据表

- TO-247-3 Bulk Obsolete Trench 1200 V 60 A 2.2V @ 15V, 20A 210 W Through Hole 1.06mJ (on), 620µJ (off) Standard 55 A 130 nC 30ns/160ns - 600V, 20A, 10Ohm, 15V TO-247AD - - -55°C ~ 175°C (TJ)
IRG8P15N120KD-EPBF

IRG8P15N120KD-EPBF

IRG8P15N120 - DISCRETE IGBT WITH

International Rectifier

8,125 -
IRG8P15N120KD-EPBF

数据表

- TO-247-3 Bulk Obsolete - 1200 V 30 A 2V @ 15V, 10A 125 W Through Hole 600µJ (on), 600µJ (off) Standard 30 A 98 nC 15ns/170ns - 600V, 10A, 10Ohm, 15V TO-247AD - 60 ns -40°C ~ 150°C (TJ)
IRGP4640D-EPBF

IRGP4640D-EPBF

IRGP4640 - DISCRETE IGBT WITH AN

International Rectifier

24,600 -
IRGP4640D-EPBF

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
IRG8P75N65UD1PBF

IRG8P75N65UD1PBF

IRG8P75N65 - 650V 45A IGBT

International Rectifier

1,000 -
IRG8P75N65UD1PBF

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
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