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单个 IGBTs

制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度
STGWA60NC60WDR

STGWA60NC60WDR

IGBT 600V 130A 340W TO247

STMicroelectronics

425 -
STGWA60NC60WDR

数据表

PowerMESH™ TO-247-3 Tube Obsolete - 600 V 250 A 2.6V @ 15V, 40A 340 W Through Hole 743µJ (on), 560µJ (off) Standard 130 A 195 nC 40ns/240ns - 390V, 40A, 10Ohm, 15V TO-247 Long Leads - 42 ns -55°C ~ 150°C (TJ)
IRG7PSH54K10DPBF

IRG7PSH54K10DPBF

IGBT, 120A I(C), 1200V V(BR)CES,

International Rectifier

6,629 -
IRG7PSH54K10DPBF

数据表

- TO-274AA Bulk Active - 1200 V 200 A 2.4V @ 15V, 50A 520 W Through Hole 4.8mJ (on), 2.8mJ (off) Standard 120 A 435 nC 110ns/490ns - 600V, 50A, 5Ohm, 15V SUPER-247 (TO-274AA) - 170 ns -40°C ~ 150°C (TJ)
RJH1CM5DPQ-E0#T2

RJH1CM5DPQ-E0#T2

IGBT 1200V 30A TO247

Renesas Electronics Corporation

500 -
RJH1CM5DPQ-E0#T2

数据表

- TO-247-3 Bulk Active - 1200 V - 2.7V @ 15V, 15A 245 W Through Hole 1.6mJ (on), 700µJ (off) Standard 30 A 74 nC 40ns/100ns - 600V, 15A, 5Ohm, 15V TO-247 - 200 ns 150°C (TJ)
PTGH7565S1_T0_00201

PTGH7565S1_T0_00201

650V/75A IN TO-247-3L PACKAGE IN

Panjit International Inc.

810 -
PTGH7565S1_T0_00201

数据表

- TO-247-3 Cut Tape (CT) Active Trench Field Stop 650 V 225 A 2.25V @ 15V, 75A 366 W Through Hole 2.47mJ (on), 1.27mJ (off) Standard 133 A 108 nC 30ns/137ns - 400V, 75A, 10Ohm, 15V TO247-3L - 57 ns -40°C ~ 175°C (TJ)
RJH60D7DPQ-E0#T2

RJH60D7DPQ-E0#T2

IGBT TRENCH 600V 90A TO247

Renesas Electronics Corporation

1,012 -
RJH60D7DPQ-E0#T2

数据表

- TO-247-3 Bulk Active Trench 600 V - 2.2V @ 15V, 50A 300 W Through Hole 1.1mJ (on), 600µJ (off) Standard 90 A 130 nC 60ns/190ns - 300V, 50A, 5Ohm, 15V TO-247 - 100 ns 150°C (TJ)
HGTG24N60D1D

HGTG24N60D1D

UFS SERIES N-CHANNEL IGBT

Harris Corporation

9,092 -
HGTG24N60D1D

数据表

- TO-247-3 Bulk Active - 600 V 96 A 2.3V @ 15V, 24A 125 W Through Hole - Standard 40 A 155 nC - - - TO-247 - 60 ns -55°C ~ 150°C (TJ)
APT40GT60BRG

APT40GT60BRG

IGBT NPT 600V 80A TO247

Microchip Technology

608 -
APT40GT60BRG

数据表

Thunderbolt IGBT® TO-247-3 Tube Active NPT 600 V 160 A 2.5V @ 15V, 40A 345 W Through Hole 828µJ (off) Standard 80 A 200 nC 12ns/124ns - 400V, 40A, 5Ohm, 15V TO-247 [B] - - -55°C ~ 150°C (TJ)
FGH50N6S2D

FGH50N6S2D

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor

2,375 -
FGH50N6S2D

数据表

- TO-247-3 Bulk Active - 600 V 240 A 2.7V @ 15V, 30A 463 W Through Hole 260µJ (on), 250µJ (off) Standard 75 A 70 nC 13ns/55ns - 390V, 30A, 3Ohm, 15V TO-247 - 55 ns -55°C ~ 150°C (TJ)
IXGH24N120C3

IXGH24N120C3

IGBT PT 1200V 48A TO247AD

IXYS

359 -
IXGH24N120C3

数据表

GenX3™ TO-247-3 Tube Active PT 1200 V 96 A 4.2V @ 15V, 20A 250 W Through Hole 1.16mJ (on), 470µJ (off) Standard 48 A 79 nC 16ns/93ns - 600V, 20A, 5Ohm, 15V TO-247AD - - -55°C ~ 150°C (TJ)
RJP30E3DPK-M2#T0

RJP30E3DPK-M2#T0

IGBT

Renesas Electronics Corporation

29,098 -
RJP30E3DPK-M2#T0

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FGH30N60LSDTU

FGH30N60LSDTU

IGBT 600V 60A TO247-3

onsemi

3,210 -
FGH30N60LSDTU

数据表

- TO-247-3 Tube Active - 600 V 90 A 1.4V @ 15V, 30A 480 W Through Hole 1.1mJ (on), 21mJ (off) Standard 60 A 225 nC 18ns/250ns - 400V, 30A, 6.8Ohm, 15V TO-247-3 - 35 ns -55°C ~ 150°C (TJ)
HGTA32N60E2

HGTA32N60E2

32A, 600V N-CHANNEL IGBT

Harris Corporation

142 -
HGTA32N60E2

数据表

- TO-218-5 Bulk Active - 600 V 200 A 2.9V @ 15V, 32A 208 W Through Hole - Standard 50 A 265 nC - - - TO-218-5 - - -55°C ~ 150°C (TJ)
MIW40N120FLA-BP

MIW40N120FLA-BP

IGBT 1200V 40A,TO-247AB

Micro Commercial Co

1,656 -
MIW40N120FLA-BP

数据表

- TO-247-3 Tube Active Trench Field Stop 1200 V 160 A 2.3V @ 15V, 40A 428 W Through Hole 3.8mJ (on), 1.7mJ (off) Standard 80 A 330 nC 45ns/180ns - 600V, 40A, 12Ohm, 15V TO-247AB - - -40°C ~ 175°C (TJ)
AUIRGPS4070D0

AUIRGPS4070D0

IGBT TRENCH 600V 240A TO274-3

International Rectifier

881 -
AUIRGPS4070D0

数据表

- TO-274AA Bulk Active Trench 600 V 360 A 2V @ 15V, 120A 750 W Through Hole 5.7mJ (on), 4.2mJ (off) Standard 240 A 250 nC 40ns/140ns AEC-Q101 400V, 120A, 4.7Ohm, 15V PG-TO274-3-903 Automotive 210 ns -55°C ~ 175°C (TJ)
FGH50N6S2D

FGH50N6S2D

IGBT 600V 75A TO247-3

onsemi

3,048 -
FGH50N6S2D

数据表

- TO-247-3 Tube Obsolete - 600 V 240 A 2.7V @ 15V, 30A 463 W Through Hole 260µJ (on), 250µJ (off) Standard 75 A 70 nC 13ns/55ns - 390V, 30A, 3Ohm, 15V TO-247-3 - 55 ns -55°C ~ 150°C (TJ)
SGL40N150DTU

SGL40N150DTU

N-CHANNEL IGBT

Fairchild Semiconductor

1,042 -
SGL40N150DTU

数据表

- TO-264-3, TO-264AA Tube Obsolete - 1500 V 120 A 4.7V @ 15V, 40A 200 W Through Hole - Standard 40 A 140 nC - - - HPM F2 - 300 ns -55°C ~ 150°C (TJ)
RJH30E3DPK-M2#T2

RJH30E3DPK-M2#T2

IGBT

Renesas Electronics Corporation

1,109 -
RJH30E3DPK-M2#T2

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
AUIRGDC0250

AUIRGDC0250

IGBT 1200V 141A 543W TO-220

Infineon Technologies

1,995 -
AUIRGDC0250

数据表

- TO-220-3 Tube Obsolete - 1200 V 99 A 1.57V @ 15V, 33A 543 W Through Hole 15mJ (off) Standard 141 A 227 nC -/485ns - 600V, 33A, 5Ohm, 15V SUPER-220™ (TO-273AA) - - -55°C ~ 150°C (TJ)
STGY80H65DFB

STGY80H65DFB

IGBT 650V 120A 469W MAX247

STMicroelectronics

362 -
STGY80H65DFB

数据表

- TO-247-3 Tube Obsolete Trench Field Stop 650 V 240 A 2V @ 15V, 80A 469 W Through Hole 2.1mJ (on), 1.5mJ (off) Standard 120 A 414 nC 84ns/280ns - 400V, 80A, 10Ohm, 15V MAX247™ - 85 ns -55°C ~ 175°C (TJ)
APT60GT60BRG

APT60GT60BRG

IGBT NPT 600V 100A TO247

Microchip Technology

1,936 -
APT60GT60BRG

数据表

Thunderbolt IGBT® TO-247-3 Tube Active NPT 600 V 360 A 2.5V @ 15V, 60A 500 W Through Hole 3.4mJ Standard 100 A 275 nC 26ns/395ns - - TO-247 [B] - - -55°C ~ 150°C (TJ)
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