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单个 IGBTs

制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度
HGTD7N60C3S9A

HGTD7N60C3S9A

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor

249 -
HGTD7N60C3S9A

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active - 600 V 56 A 2V @ 15V, 7A 60 W Surface Mount 165µJ (on), 600µJ (off) Standard 14 A 23 nC - - - TO-252 (DPAK) - - -40°C ~ 150°C (TJ)
IRGB4060DPBF

IRGB4060DPBF

IGBT

Infineon Technologies

50,350 -
IRGB4060DPBF

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
IRGS15B60KPBF

IRGS15B60KPBF

IGBT

Infineon Technologies

8,000 -
IRGS15B60KPBF

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
IRG4BC30UPBF

IRG4BC30UPBF

IGBT

Infineon Technologies

10,580 -
IRG4BC30UPBF

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
SGF23N60UFTU

SGF23N60UFTU

IGBT 600V 23A TO3PF

Fairchild Semiconductor

175,840 -
SGF23N60UFTU

数据表

- TO-3P-3 Full Pack Bulk Active - 600 V 92 A 2.6V @ 15V, 12A 75 W Through Hole 115µJ (on), 135µJ (off) Standard 23 A - 17ns/60ns - 300V, 12A, 23Ohm, 15V TO-3PF - - -55°C ~ 150°C (TJ)
ISL9V2540S3ST

ISL9V2540S3ST

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor

16,216 -
ISL9V2540S3ST

数据表

EcoSPARK® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active - 430 V - 1.8V @ 4V, 6A 166.7 W Surface Mount - Logic 15.5 A 15.1 nC -/3.64µs - 300V, 1kOhm, 5V TO-263 (D2PAK) - - -40°C ~ 175°C (TJ)
ISL9V3036S3ST_SB82029A

ISL9V3036S3ST_SB82029A

IGBT, 360V, 17A, 1.58V, 300MJ, D

Fairchild Semiconductor

954 -
ISL9V3036S3ST_SB82029A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJH60D1DPP-E0#T2

RJH60D1DPP-E0#T2

RJH60D1 - INSULATED GATE BIPOLAR

Renesas

1,538 -
RJH60D1DPP-E0#T2

数据表

- TO-220-3 Full Pack Bulk Obsolete Trench 600 V - 2.5V @ 15V, 10A 30 W Through Hole 100µJ (on), 130µJ (off) Standard 20 A 13 nC 30ns/42ns - 300V, 10A, 5Ohm, 15V TO-220FP - 70 ns 150°C (TJ)
IRGS6B60KTRLPBF

IRGS6B60KTRLPBF

IRGS6B60 - IGBT WITH ULTRAFAST S

International Rectifier

20,000 -
IRGS6B60KTRLPBF

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FGB3245G2-F085C

FGB3245G2-F085C

IGNITION IGBT, 450V, 23A, 1.3V,

onsemi

48,200 -
FGB3245G2-F085C

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active - 450 V - 1.25V @ 4V, 6A 150 W Surface Mount - Logic 41 A 23 nC 900ns/5.4µs - 300V, 6.5A, 1kOhm, 5V TO-263 (D2PAK) - 2.6 µs -40°C ~ 175°C (TJ)
AUIRG4BC30S-S

AUIRG4BC30S-S

IGBT

Infineon Technologies

23,755 -
AUIRG4BC30S-S

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
AUIRG4BC30S-S

AUIRG4BC30S-S

AUIRG4B30 - AUTOMOTIVE IGBT DISC

International Rectifier

700 -
AUIRG4BC30S-S

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete - 600 V 68 A 1.6V @ 15V, 18A 100 W Surface Mount 260µJ (on), 3.45mJ (off) Standard 34 A 50 nC 22ns/540ns - 480V, 18A, 23Ohm, 15V D2PAK - - -55°C ~ 150°C (TJ)
FGA50S110P

FGA50S110P

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor

45,000 -
FGA50S110P

数据表

- TO-3P-3, SC-65-3 Bulk Active Trench Field Stop 1100 V 120 A 2.6V @ 15V, 50A 300 W Through Hole - Standard 50 A 195 nC - - - TO-3PN - - -55°C ~ 175°C (TJ)
IRG4PC30KPBF

IRG4PC30KPBF

IRG4PC30 - DISCRETE IGBT WITHOUT

International Rectifier

6,000 -
IRG4PC30KPBF

数据表

- TO-247-3 Bulk Obsolete - 600 V 58 A 2.7V @ 15V, 16A 100 W Through Hole 360µJ (on), 510µJ (off) Standard 28 A 67 nC 26ns/130ns - 480V, 16A, 23Ohm, 15V TO-247AC - - -55°C ~ 150°C (TJ)
IRGSL10B60KDPBF

IRGSL10B60KDPBF

IRGSL10B6 - DISCRETE IGBT WITH A

International Rectifier

4,200 -
IRGSL10B60KDPBF

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Obsolete NPT 600 V 44 A 2.2V @ 15V, 10A 156 W Through Hole 140µJ (on), 250µJ (off) Standard 22 A 38 nC 30ns/230ns - 400V, 10A, 47Ohm, 15V TO-262 - 90 ns -55°C ~ 150°C (TJ)
FGB20N60SF

FGB20N60SF

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor

726 -
FGB20N60SF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active Field Stop 600 V 60 A 2.8V @ 15V, 20A 208 W Surface Mount 370µJ (on), 160µJ (off) Standard 40 A 65 nC 13ns/90ns - 400V, 20A, 10Ohm, 15V TO-263 (D2PAK) - - -55°C ~ 150°C (TJ)
HGTP12N60A4D

HGTP12N60A4D

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor

67,276 -
HGTP12N60A4D

数据表

- TO-220-3 Bulk Active - 600 V 96 A 2.7V @ 15V, 12A 167 W Through Hole 55µJ (on), 50µJ (off) Standard 54 A 78 nC 17ns/96ns - 390V, 12A, 10Ohm, 15V TO-220-3 - 30 ns -55°C ~ 150°C (TJ)
FGAF40N60UFTU

FGAF40N60UFTU

IGBT

Fairchild Semiconductor

2,156 -
FGAF40N60UFTU

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
IRG4PC30FPBF

IRG4PC30FPBF

IGBT

Infineon Technologies

1,567 -
IRG4PC30FPBF

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
HGT1S14N41G3VLT

HGT1S14N41G3VLT

IGBT

Fairchild Semiconductor

800 -
HGT1S14N41G3VLT

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
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