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单个 IGBTs

制造商	系列	封装/外壳	包装	产品状态	IGBT 类型	电压 - 集电极发射极击穿（最大值）	电流 - 集电极脉冲 (Icm)	导通电压 (Vce(on)）（最大值）@ Vge, Ic	功率 - 最大值	安装类型	开关能量	输入类型	电流 - 集电极 (Ic)（最大值）	栅极电荷	导通/关断时间 (Td) @ 25°C	认证	测试条件	供应商设备封装	等级	反向恢复时间 (trr)	工作温度
Alpha & Omega Semiconductor Inc. Bourns Inc. Diodes Incorporated Diotec Semiconductor Fairchild Semiconductor GeneSiC Semiconductor Harris Corporation Infineon Technologies International Rectifier IXYS Littelfuse Inc. Micro Commercial Co Microchip Technology Microsemi Corporation Motorola Nexperia USA Inc. onsemi Panjit International Inc. Powerex Inc. Qualcomm Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo Semikron SemiQ STMicroelectronics Toshiba Semiconductor and Storage Watech Electronics WeEn Semiconductors

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	IGBT 类型	电压 - 集电极发射极击穿（最大值）	电流 - 集电极脉冲 (Icm)	导通电压 (Vce(on)）（最大值）@ Vge, Ic	功率 - 最大值	安装类型	开关能量	输入类型	电流 - 集电极 (Ic)（最大值）	栅极电荷	导通/关断时间 (Td) @ 25°C	认证	测试条件	供应商设备封装	等级	反向恢复时间 (trr)	工作温度
HGW40N120FHA 1200V 40A IGBT without FRD TO-2 Watech Electronics	1,800	-	询价单	数据表	-	-	Tape & Box (TB)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HKZ75N65SHRA 650V 75A IGBT with 650V 30A SIC Watech Electronics	1,800	-	询价单	数据表	-	TO-247-4	Tape & Box (TB)	Active	-	650 V	300 A	2.3V @ 15V, 75A	395 W	Through Hole	460µJ (on), 660µJ (off)	Standard	90 A	92 nC	26ns/110ns	-	400V, 75A, 1.5Ohm, 15V	TO-247-4	-	-	-40°C ~ 175°C (TJ)
H3L100R07W2G4 650V 100A INPC IGBT with Easy2B Watech Electronics	1,800	-	询价单	数据表	-	-	Tape & Box (TB)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HKZ75N65SHEB 650V 75A IGBT with 650V 75A FRD Watech Electronics	1,800	-	询价单	数据表	-	TO-247-4	Tape & Box (TB)	Active	-	650 V	300 A	2.1V @ 15V, 75A	394 W	Through Hole	2.39mJ (on), 730µJ (off)	Standard	90 A	103 nC	41ns/180ns	-	400V, 75A, 20Ohm, 15V	TO-247-4	-	83 ns	-40°C ~ 175°C (TJ)
HKW75N65SHRA 650V 75A IGBT with 650V 30A SIC Watech Electronics	1,800	-	询价单	数据表	-	TO-247-3	Tape & Box (TB)	Active	-	650 V	300 A	2.3V @ 15V, 75A	395 W	Through Hole	1.3mJ (on), 800µJ (off)	Standard	90 A	92 nC	25ns/106ns	-	400V, 75A, 1.5Ohm, 15V	TO-247-3	-	-	-40°C ~ 175°C (TJ)
HKW40N120FHEI 1200V 40A IGBT with 1200V 40A fu Watech Electronics	1,800	-	询价单	数据表	-	TO-247-3	Tape & Box (TB)	Active	-	1200 V	160 A	2.4V @ 15V, 40A	441 W	Through Hole	2.23mJ (on), 1.64mJ (off)	Standard	80 A	300 nC	68ns/383ns	-	600V, 40A, 12Ohm, 15V	TO-247-3	-	378 ns	-40°C ~ 175°C (TJ)
HKQ100N65FMTA 650V 100A IGBT with 650V 100A fu Watech Electronics	1,800	-	询价单	数据表	-	TO-247-3	Tape & Box (TB)	Active	Field Stop	650 V	424 A	1.9V @ 15V, 100A	1.086 kW	Through Hole	4.51mJ (on), 2.44mJ (off)	Standard	200 A	284 nC	84ns/366ns	-	400V, 100A, 16Ohm, 15V	TO-247-3	-	77 ns	-40°C ~ 175°C (TJ)
F5L200R12N3H3BPSA1 F5L200R12 = IGBT MODULE Infineon Technologies	288	-	询价单	数据表	*	-	Bulk	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STK762-921G-E IGBT ACTIVE FILTER POWER IC Sanyo	600	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
H3L150R07W2G4 650V 150A INPC IGBT with Easy2B Watech Electronics	1,800	-	询价单	数据表	-	-	Tape & Box (TB)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSM300GA160DN13CB7HOSA1 BSM300GA160 - INSULATED GATE BIP Infineon Technologies	74	-	询价单	数据表	*	-	Bulk	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HKW75N65SHEB 650V 75A IGBT with 650V 75A FRD Watech Electronics	1,800	-	询价单	数据表	-	TO-247-3	Tape & Box (TB)	Active	-	650 V	300 A	2.1V @ 15V, 75A	394 W	Through Hole	2.72mJ (on), 750µJ (off)	Standard	90 A	103 nC	21ns/95ns	-	400V, 75A, 9Ohm, 15V	TO-247-3	-	86 ns	-40°C ~ 175°C (TJ)
FD1200R12IE4B1S1BDMA1 FD1200R12IE4B1S1BD - IGBT Infineon Technologies	84	-	询价单	数据表	*	-	Bulk	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGW75N60TFKSA1 IGBT TRENCH FS 600V 150A TO247-3 Infineon Technologies	64	-	询价单	数据表	TrenchStop®	TO-247-3	Tube	Active	Trench Field Stop	600 V	225 A	2V @ 15V, 75A	428 W	Through Hole	4.5mJ	Standard	150 A	470 nC	33ns/330ns	-	400V, 75A, 5Ohm, 15V	PG-TO247-3-1	-	-	-40°C ~ 175°C (TJ)
APT75GN120LG IGBT TRENCH FS 1200V 200A TO264 Microchip Technology	20	-	询价单	数据表	-	TO-264-3, TO-264AA	Tube	Active	Trench Field Stop	1200 V	225 A	2.1V @ 15V, 75A	833 W	Through Hole	8620µJ (on), 11400µJ (off)	Standard	200 A	425 nC	60ns/620ns	-	800V, 75A, 1Ohm, 15V	TO-264 [L]	-	-	-55°C ~ 150°C (TJ)
IXYN50N170CV1 IGBT 1700V 120A SOT227B IXYS	13	-	询价单	数据表	XPT™	SOT-227-4, miniBLOC	Tube	Active	-	1700 V	485 A	3.7V @ 15V, 50A	880 W	Chassis Mount	8.7mJ (on), 5.6mJ (off)	Standard	120 A	260 nC	22ns/236ns	-	850V, 50A, 1Ohm, 15V	SOT-227B	-	255 ns	-55°C ~ 175°C (TJ)
IKW20N60H3FKSA1 IGBT TRENCH FS 600V 40A TO247-3 Infineon Technologies	52	-	询价单	数据表	TrenchStop®	TO-247-3	Tube	Active	Trench Field Stop	600 V	80 A	2.4V @ 15V, 20A	170 W	Through Hole	800µJ	Standard	40 A	120 nC	17ns/194ns	-	400V, 20A, 14.6Ohm, 15V	PG-TO247-3-1	-	112 ns	-40°C ~ 175°C (TJ)
IGW30N60TFKSA1 IGBT TRENCH FS 600V 60A TO247-3 Infineon Technologies	60	-	询价单	数据表	TrenchStop®	TO-247-3	Tube	Active	Trench Field Stop	600 V	90 A	2.05V @ 15V, 30A	187 W	Through Hole	1.46mJ	Standard	60 A	167 nC	23ns/254ns	-	400V, 30A, 10.6Ohm, 15V	PG-TO247-3-1	-	-	-40°C ~ 175°C (TJ)
STGW20NC60VD IGBT 600V 60A 200W TO247 STMicroelectronics	89	-	询价单	数据表	PowerMESH™	TO-247-3	Tube	Active	-	600 V	150 A	2.5V @ 15V, 20A	200 W	Through Hole	220µJ (on), 330µJ (off)	Standard	60 A	100 nC	31ns/100ns	-	390V, 20A, 3.3Ohm, 15V	TO-247-3	-	44 ns	-55°C ~ 150°C (TJ)
GT40RR21(STA1,E IGBT 1200V 40A TO3P Toshiba Semiconductor and Storage	52	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tube	Active	-	1200 V	200 A	2.8V @ 15V, 40A	230 W	Through Hole	-, 540µJ (off)	Standard	40 A	-	-	-	280V, 40A, 10Ohm, 20V	TO-3P(N)	-	600 ns	175°C (TJ)

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