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首页 > 产品 > 分立半导体产品 > 晶体管 > 绝缘栅双极型晶体管（IGBTs） > 单个 IGBTs

单个 IGBTs

制造商	系列	封装/外壳	包装	产品状态	IGBT 类型	电压 - 集电极发射极击穿（最大值）	电流 - 集电极脉冲 (Icm)	导通电压 (Vce(on)）（最大值）@ Vge, Ic	功率 - 最大值	安装类型	开关能量	输入类型	电流 - 集电极 (Ic)（最大值）	栅极电荷	导通/关断时间 (Td) @ 25°C	认证	测试条件	供应商设备封装	等级	反向恢复时间 (trr)	工作温度
Alpha & Omega Semiconductor Inc. Bourns Inc. Diodes Incorporated Diotec Semiconductor Fairchild Semiconductor GeneSiC Semiconductor Harris Corporation Infineon Technologies International Rectifier IXYS Littelfuse Inc. Micro Commercial Co Microchip Technology Microsemi Corporation Motorola Nexperia USA Inc. onsemi Panjit International Inc. Powerex Inc. Qualcomm Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo Semikron SemiQ STMicroelectronics Toshiba Semiconductor and Storage Watech Electronics WeEn Semiconductors

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	IGBT 类型	电压 - 集电极发射极击穿（最大值）	电流 - 集电极脉冲 (Icm)	导通电压 (Vce(on)）（最大值）@ Vge, Ic	功率 - 最大值	安装类型	开关能量	输入类型	电流 - 集电极 (Ic)（最大值）	栅极电荷	导通/关断时间 (Td) @ 25°C	认证	测试条件	供应商设备封装	等级	反向恢复时间 (trr)	工作温度
APT65GP60B2G IGBT PT 600V 100A Microchip Technology	115	-	询价单	数据表	POWER MOS 7®	TO-247-3 Variant	Tube	Active	PT	600 V	250 A	2.7V @ 15V, 65A	833 W	Through Hole	605µJ (on), 896µJ (off)	Standard	100 A	210 nC	30ns/91ns	-	400V, 65A, 5Ohm, 15V	-	-	-	-55°C ~ 150°C (TJ)
NGTB40N120L3WG IGBT 1200V 160A TO247 onsemi	3,610	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	Trench Field Stop	1200 V	160 A	2V @ 15V, 40A	454 W	Through Hole	1.5mJ (on), 1.5mJ (off)	Standard	160 A	220 nC	18ns/150ns	-	600V, 40A, 10Ohm, 15V	TO-247-3	-	86 ns	-55°C ~ 175°C (TJ)
STK762-921G-E IGBT ACTIVE FILTER POWER IC onsemi	1,752	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STGD10NC60ST4 IGBT 600V 18A 60W DPAK STMicroelectronics	2,406	-	询价单	数据表	PowerMESH™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	-	600 V	25 A	1.65V @ 15V, 5A	60 W	Surface Mount	60µJ (on), 340µJ (off)	Standard	18 A	18 nC	19ns/160ns	-	390V, 5A, 10Ohm, 15V	DPAK	-	-	-55°C ~ 150°C (TJ)
SGD04N60BUMA1 IGBT Infineon Technologies	7,500	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NGB8207ABNT4G INSULATED GATE BIPOLAR TRANSISTO onsemi	15,696	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	-	365 V	50 A	2.2V @ 3.7V, 10A	165 W	Surface Mount	-	Logic	20 A	-	-	-	-	D2PAK	-	-	-55°C ~ 175°C (TJ)
SKP02N60XKSA1 IGBT Infineon Technologies	6,033	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FGP5N60LS INSULATED GATE BIPOLAR TRANSISTO Fairchild Semiconductor	19,247	-	询价单	数据表	-	TO-220-3	Bulk	Active	Field Stop	600 V	36 A	3.2V @ 12V, 14A	83 W	Through Hole	38µJ (on), 130µJ (off)	Standard	10 A	18.3 nC	4.3ns/36ns	-	400V, 5A, 10Ohm, 15V	TO-220-3	-	-	-55°C ~ 150°C (TJ)
FGPF4536 INSULATED GATE BIPOLAR TRANSISTO Fairchild Semiconductor	88,700	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Active	Trench	360 V	220 A	1.8V @ 15V, 50A	28.4 W	Through Hole	-	Standard	-	47 nC	-	-	-	TO-220F-3	-	-	-
FGPF70N30TDTU IGBT TRENCH 300V 70A TO220F Fairchild Semiconductor	4,534	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Active	Trench	300 V	160 A	1.5V @ 15V, 20A	49.2 W	Through Hole	-	Standard	70 A	125 nC	32ns/175ns	-	200V, 40A, 15Ohm, 15V	TO-220F	-	21 ns	-55°C ~ 150°C (TJ)
IRGB4B60KD1PBF IRGB4B60K - IGBT WITH ULTRAFAST International Rectifier	57,450	-	询价单	数据表	-	TO-220-3	Bulk	Obsolete	NPT	600 V	22 A	2.5V @ 15V, 4A	63 W	Through Hole	73µJ (on), 47µJ (off)	Standard	11 A	12 nC	22ns/100ns	-	400V, 4A, 100Ohm, 15V	TO-220AB	-	93 ns	-55°C ~ 175°C (TJ)
ISL9V2040D3ST INSULATED GATE BIPOLAR TRANSISTO Fairchild Semiconductor	6,021	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRGS4607DTRLPBF IRGS4607 - DISCRETE IGBT WITH AN International Rectifier	3,200	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	-	600 V	12 A	2.05V @ 15V, 4A	58 W	Surface Mount	140µJ (on), 62µJ (off)	Standard	11 A	9 nC	27ns/120ns	-	400V, 4A, 100Ohm, 15V	D2PAK	-	48 ns	-40°C ~ 175°C (TJ)
IRGSL4B60KD1PBF IRGSL4B60 - DISCRETE IGBT WITH A International Rectifier	2,850	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Obsolete	NPT	600 V	22 A	2.5V @ 15V, 4A	63 W	Through Hole	73µJ (on), 47µJ (off)	Standard	11 A	12 nC	22ns/100ns	-	400V, 4A, 100Ohm, 15V	TO-262	-	93 ns	-55°C ~ 175°C (TJ)
IRGSL6B60KDPBF IGBT NPT 600V 13A TO262 International Rectifier	10,000	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Obsolete	NPT	600 V	26 A	2.2V @ 15V, 5A	90 W	Through Hole	110µJ (on), 135µJ (off)	Standard	13 A	18.2 nC	25ns/215ns	-	400V, 5A, 100Ohm, 15V	TO-262	-	70 ns	-55°C ~ 150°C (TJ)
FGB7N60UNDF IGBT NPT 600V 14A TO263 Fairchild Semiconductor	285	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	NPT	600 V	21 A	2.3V @ 15V, 7A	83 W	Surface Mount	99µJ (on), 104µJ (off)	Standard	14 A	18 nC	5.9ns/32.3ns	-	400V, 7A, 10Ohm, 15V	TO-263 (D2PAK)	-	32.3 ns	-55°C ~ 150°C (TJ)
SGB15N60HSATMA1 IGBT Infineon Technologies	6,000	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG4BC10SD-SPBF IGBT 600V 14A D2PAK International Rectifier	2,050	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	-	600 V	18 A	1.8V @ 15V, 8A	38 W	Surface Mount	310µJ (on), 3.28mJ (off)	Standard	14 A	15 nC	76ns/815ns	-	480V, 8A, 100Ohm, 15V	D2PAK	-	28 ns	-55°C ~ 150°C (TJ)
NGB8206NTF4G INSULATED GATE BIPOLAR TRANSISTO onsemi	12,600	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	-	390 V	-	1.9V @ 4.5V, 20A	150 W	Surface Mount	-	Logic	20 A	-	-	-	-	D2PAK	-	-	-
FGPF4565 INSULATED GATE BIPOLAR TRANSISTO Fairchild Semiconductor	891	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Active	Trench Field Stop	650 V	170 A	1.88V @ 15V, 30A	30 W	Through Hole	-	Standard	-	40.3 nC	11.2ns/40.8ns	-	400V, 30A, 5Ohm, 15V	TO-220F-3	-	-	-55°C ~ 150°C (TJ)

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