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单个 IGBTs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | IGBT 类型 | 电压 - 集电极发射极击穿（最大值） | 电流 - 集电极脉冲 (Icm) | 导通电压 (Vce(on)）（最大值）@ Vge, Ic | 功率 - 最大值 | 安装类型 | 开关能量 | 输入类型 | 电流 - 集电极 (Ic)（最大值） | 栅极电荷 | 导通/关断时间 (Td) @ 25°C | 认证 | 测试条件 | 供应商设备封装 | 等级 | 反向恢复时间 (trr) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT100GN60LDQ4GIGBT TRENCH FS 600V 229A TO264 Microchip Technology |
7,105 | - |
|
数据表 |
- | TO-264-3, TO-264AA | Tube | Active | Trench Field Stop | 600 V | 300 A | 1.85V @ 15V, 100A | 625 W | Through Hole | 4.75mJ (on), 2.675mJ (off) | Standard | 229 A | 600 nC | 31ns/310ns | - | 400V, 100A, 1Ohm, 15V | TO-264 [L] | - | - | -55°C ~ 175°C (TJ) |
|
|
APT50GF120LRGIGBT NPT 1200V 135A TO264 Microchip Technology |
8,665 | - |
|
数据表 |
- | TO-264-3, TO-264AA | Tube | Active | NPT | 1200 V | 150 A | 3V @ 15V, 50A | 781 W | Through Hole | 3.6mJ (on), 2.64mJ (off) | Standard | 135 A | 340 nC | 25ns/260ns | - | 800V, 50A, 1Ohm, 15V | TO-264 [L] | - | - | -55°C ~ 150°C (TJ) |
|
APT68GA60BIGBT PT 600V 121A TO247 Microchip Technology |
1 | - |
|
数据表 |
POWER MOS 8™ | TO-247-3 | Tube | Active | PT | 600 V | 202 A | 2.5V @ 15V, 40A | 520 W | Through Hole | 715µJ (on), 607µJ (off) | Standard | 121 A | 298 nC | 21ns/133ns | - | 400V, 40A, 4.7Ohm, 15V | TO-247 [B] | - | - | -55°C ~ 150°C (TJ) |
|
APT35GN120SGIGBT NPT FS 1200V 94A D3PAK Microchip Technology |
23 | - |
|
数据表 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | NPT, Trench Field Stop | 1200 V | 105 A | 2.1V @ 15V, 35A | 379 W | Surface Mount | -, 2.315mJ (off) | Standard | 94 A | 220 nC | 24ns/300ns | - | 800V, 35A, 2.2Ohm, 15V | D3PAK | - | - | -55°C ~ 150°C (TJ) |
|
|
APT80GA60BIGBT PT 600V 143A TO247 Microchip Technology |
7,903 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | PT | 600 V | 240 A | 2.5V @ 15V, 47A | 625 W | Through Hole | 840µJ (on), 751µJ (off) | Standard | 143 A | 230 nC | 23ns/158ns | - | 400V, 47A, 4.7Ohm, 15V | TO-247 [B] | - | - | -55°C ~ 150°C (TJ) |
|
APT50GN120B2GIGBT NPT FIELD STOP 1200V 134A Microchip Technology |
4,291 | - |
|
数据表 |
- | TO-247-3 Variant | Tube | Active | NPT, Trench Field Stop | 1200 V | 150 A | 2.1V @ 15V, 50A | 543 W | Through Hole | 4495µJ (off) | Standard | 134 A | 315 nC | 28ns/320ns | - | 800V, 50A, 2.2Ohm, 15V | - | - | - | -55°C ~ 150°C (TJ) |
|
|
APT64GA90B2D30IGBT PT 900V 117A TO247 Microchip Technology |
2 | - |
|
数据表 |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | PT | 900 V | 193 A | 3.1V @ 15V, 38A | 500 W | Through Hole | 1192µJ (on), 1088µJ (off) | Standard | 117 A | 162 nC | 18ns/131ns | - | 600V, 38A, 4.7Ohm, 15V | - | - | - | -55°C ~ 150°C (TJ) |
|
|
APT33GF120B2RDQ2GIGBT NPT 1200V 64A Microchip Technology |
2 | - |
|
数据表 |
- | TO-247-3 Variant | Tube | Active | NPT | 1200 V | 75 A | 3V @ 15V, 25A | 357 W | Through Hole | 1.315mJ (on), 1.515mJ (off) | Standard | 64 A | 170 nC | 14ns/185ns | - | 800V, 25A, 4.3Ohm, 15V | - | - | - | -55°C ~ 150°C (TJ) |
|
|
APT25GP90BDQ1GIGBT PT 900V 72A TO247 Microchip Technology |
7,445 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 | Tube | Active | PT | 900 V | 110 A | 3.9V @ 15V, 25A | 417 W | Through Hole | 370µJ (off) | Standard | 72 A | 110 nC | 13ns/55ns | - | 600V, 40A, 4.3Ohm, 15V | TO-247 [B] | - | - | -55°C ~ 150°C (TJ) |
|
|
APT40GP90BGIGBT PT 900V 100A TO247 Microchip Technology |
3,611 | - |
|
数据表 |
POWER MOS 7® | TO-247-3 | Tube | Active | PT | 900 V | 160 A | 3.9V @ 15V, 40A | 543 W | Through Hole | 825µJ (off) | Standard | 100 A | 145 nC | 16ns/75ns | - | 600V, 40A, 5Ohm, 15V | TO-247 [B] | - | - | -55°C ~ 150°C (TJ) |
