Microchip Technology|单个 IGBTs - 页 2

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	IGBT 类型	电压 - 集电极发射极击穿（最大值）	电流 - 集电极脉冲 (Icm)	导通电压 (Vce(on)）（最大值）@ Vge, Ic	功率 - 最大值	安装类型	开关能量	输入类型	电流 - 集电极 (Ic)（最大值）	栅极电荷	导通/关断时间 (Td) @ 25°C	认证	测试条件	供应商设备封装	等级	反向恢复时间 (trr)	工作温度
APT60GT60BRG IGBT NPT 600V 100A TO247 Microchip Technology	1,936	-	询价单	数据表	Thunderbolt IGBT®	TO-247-3	Tube	Active	NPT	600 V	360 A	2.5V @ 15V, 60A	500 W	Through Hole	3.4mJ	Standard	100 A	275 nC	26ns/395ns	-	-	TO-247 [B]	-	-	-55°C ~ 150°C (TJ)
APT65GP60B2G IGBT PT 600V 100A Microchip Technology	115	-	询价单	数据表	POWER MOS 7®	TO-247-3 Variant	Tube	Active	PT	600 V	250 A	2.7V @ 15V, 65A	833 W	Through Hole	605µJ (on), 896µJ (off)	Standard	100 A	210 nC	30ns/91ns	-	400V, 65A, 5Ohm, 15V	-	-	-	-55°C ~ 150°C (TJ)
APT75GN120LG IGBT TRENCH FS 1200V 200A TO264 Microchip Technology	20	-	询价单	数据表	-	TO-264-3, TO-264AA	Tube	Active	Trench Field Stop	1200 V	225 A	2.1V @ 15V, 75A	833 W	Through Hole	8620µJ (on), 11400µJ (off)	Standard	200 A	425 nC	60ns/620ns	-	800V, 75A, 1Ohm, 15V	TO-264 [L]	-	-	-55°C ~ 150°C (TJ)
APT15GP60BDQ1G IGBT PT 600V 56A TO247 Microchip Technology	100	-	询价单	数据表	POWER MOS 7®	TO-247-3	Tube	Active	PT	600 V	65 A	2.7V @ 15V, 15A	250 W	Through Hole	130µJ (on), 120µJ (off)	Standard	56 A	55 nC	8ns/29ns	-	400V, 15A, 5Ohm, 15V	TO-247 [B]	-	-	-55°C ~ 150°C (TJ)
APT50GN60BDQ2G IGBT TRENCH FS 600V 107A TO247 Microchip Technology	80	-	询价单	数据表	-	TO-247-3	Tube	Active	Trench Field Stop	600 V	150 A	1.85V @ 15V, 50A	366 W	Through Hole	1185µJ (on), 1565µJ (off)	Standard	107 A	325 nC	20ns/230ns	-	400V, 50A, 4.3Ohm, 15V	TO-247 [B]	-	-	-55°C ~ 175°C (TJ)
APT33GF120BRG IGBT NPT 1200V 52A TO247 Microchip Technology	78	-	询价单	数据表	-	TO-247-3	Tube	Active	NPT	1200 V	104 A	3.2V @ 15V, 25A	297 W	Through Hole	2.8mJ (on), 2.8mJ (off)	Standard	52 A	170 nC	25ns/210ns	-	-	TO-247 [B]	-	-	-55°C ~ 150°C (TJ)
APT80GA60LD40 IGBT PT 600V 143A TO264 Microchip Technology	52	-	询价单	数据表	POWER MOS 8™	TO-264-3, TO-264AA	Tube	Active	PT	600 V	240 A	2.5V @ 15V, 47A	625 W	Through Hole	840µJ (on), 751µJ (off)	Standard	143 A	230 nC	23ns/158ns	-	400V, 47A, 4.7Ohm, 15V	TO-264	-	22 ns	-55°C ~ 150°C (TJ)
APT100GN120B2G IGBT TRENCH FIELD STP 1200V 245A Microchip Technology	39	-	询价单	数据表	-	TO-247-3 Variant	Tube	Active	Trench Field Stop	1200 V	300 A	2.1V @ 15V, 100A	960 W	Through Hole	11mJ (on), 9.5mJ (off)	Standard	245 A	540 nC	50ns/615ns	-	800V, 100A, 1Ohm, 15V	-	-	-	-55°C ~ 150°C (TJ)
APT43GA90BD30 IGBT PT 900V 78A TO247 Microchip Technology	80	-	询价单	数据表	-	TO-247-3	Tube	Active	PT	900 V	129 A	3.1V @ 15V, 47A	337 W	Through Hole	875µJ (on), 425µJ (off)	Standard	78 A	116 nC	12ns/82ns	-	600V, 25A, 4.7Ohm, 15V	TO-247 [B]	-	-	-55°C ~ 150°C (TJ)
APT35GN120BG IGBT NPT FS 1200V 94A TO247 Microchip Technology	26	-	询价单	数据表	-	TO-247-3	Tube	Active	NPT, Trench Field Stop	1200 V	105 A	2.1V @ 15V, 35A	379 W	Through Hole	2.315mJ (off)	Standard	94 A	220 nC	24ns/300ns	-	800V, 35A, 2.2Ohm, 15V	TO-247 [B]	-	-	-55°C ~ 150°C (TJ)

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