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单个 IGBTs

制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度
IXBT20N300HV

IXBT20N300HV

IGBT 3000V 50A TO268AA

IXYS

5,066 -
IXBT20N300HV

数据表

BIMOSFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Not For New Designs - 3000 V 140 A 3.2V @ 15V, 20A 250 W Surface Mount - Standard 50 A 105 nC - - - TO-268AA - 1.35 µs -55°C ~ 150°C (TJ)
IXBF40N160

IXBF40N160

IGBT 1600V 28A ISOPLUSI4

IXYS

5,249 -
IXBF40N160

数据表

BIMOSFET™ i4-Pac™-5 (3 Leads) Tube Obsolete - 1600 V - 7.1V @ 15V, 20A 250 W Through Hole - Standard 28 A 130 nC - - 960V, 25A, 22Ohm, 15V ISOPLUS i4-PAC™ - - -55°C ~ 150°C (TJ)
IXXK200N65B4

IXXK200N65B4

IGBT 650V 370A 1150W TO264

IXYS

9,045 -
IXXK200N65B4

数据表

GenX4™, XPT™ TO-264-3, TO-264AA Tube Active PT 650 V 1000 A 1.7V @ 15V, 160A 1150 W Through Hole 4.4mJ (on), 2.2mJ (off) Standard 370 A 553 nC 62ns/245ns - 400V, 100A, 1Ohm, 15V TO-264 (IXXK) - - -55°C ~ 175°C (TJ)
APT80GP60B2G

APT80GP60B2G

IGBT PT 600V 100A TMAX

Microchip Technology

3,478 -
APT80GP60B2G

数据表

POWER MOS 7® TO-247-3 Variant Tube Active PT 600 V - 2.7V @ 15V, 80A 1041 W Through Hole - Standard 100 A - - - - T-MAX™ [B2] - - -
IXYK120N120B3

IXYK120N120B3

DISC IGBT XPT-GENX3 TO-264(3)

IXYS

4,256 -
IXYK120N120B3

数据表

XPT™, GenX3™ TO-264-3, TO-264AA Tube Active PT 1200 V 800 A 2.2V @ 15V, 100A 1500 W Through Hole 9.7mJ (on), 21.5mJ (off) Standard 320 A 400 nC 30ns/340ns - 960V, 100A, 1Ohm, 15V TO-264 (IXYK) - 54 ns -55°C ~ 175°C (TJ)
GA35XCP12-247

GA35XCP12-247

IGBT 1200V SOT247

GeneSiC Semiconductor

8,846 -
GA35XCP12-247

数据表

- TO-247-3 Tube Obsolete PT 1200 V 35 A 3V @ 15V, 35A - Through Hole 2.66mJ (on), 4.35mJ (off) Standard - 50 nC - - 800V, 35A, 22Ohm, 15V TO-247AB - 36 ns -40°C ~ 150°C (TJ)
IXYN300N65A3

IXYN300N65A3

DISC IGBT XPT-GENX3 SOT-227B(MIN

IXYS

5,463 -
IXYN300N65A3

数据表

XPT™, GenX3™ SOT-227-4, miniBLOC Tube Active PT 650 V 1600 A 1.6V @ 15V, 100A 1500 W Chassis Mount 7.8mJ (on), 4.7mJ (off) Standard 470 A 565 nC 42ns/190ns - 400V, 100A, 1Ohm, 15V SOT-227B - 125 ns -55°C ~ 175°C (TJ)
IXYX120N120B3

IXYX120N120B3

IGBT

IXYS

6,775 -
IXYX120N120B3

数据表

XPT™, GenX3™ TO-247-3 Variant Tube Active - 1200 V 800 A 2.2V @ 15V, 100A 1500 W Through Hole 9.7mJ (on), 21.5mJ (off) Standard 320 A 400 nC 30ns/340ns - 960V, 100A, 1Ohm, 15V PLUS247™-3 - 54 ns -55°C ~ 175°C (TJ)
IXBF12N300

IXBF12N300

IGBT 3000V 26A 125W ISOPLUSI4

IXYS

7,490 -
IXBF12N300

数据表

BIMOSFET™ i4-Pac™-5 (3 Leads) Tube Not For New Designs - 3000 V 98 A 3.2V @ 15V, 12A 125 W Through Hole - Standard 26 A 62 nC - - - ISOPLUS i4-PAC™ - 1.4 µs -55°C ~ 150°C (TJ)
APT200GN60B2G

APT200GN60B2G

IGBT TRENCH FIELD STOP 600V 283A

Microchip Technology

7,125 -
APT200GN60B2G

数据表

- TO-247-3 Tube Active Trench Field Stop 600 V 600 A 1.85V @ 15V, 200A 682 W Through Hole 13mJ (on), 11mJ (off) Standard 283 A 1180 nC 50ns/560ns - 400V, 200A, 1Ohm, 15V - - - -55°C ~ 175°C (TJ)
IXG70IF1200NA

IXG70IF1200NA

IGBT PT 1200V 130A SOT227B

IXYS

3,156 -
IXG70IF1200NA

数据表

X2PT™, XPT™ SOT-227-4, miniBLOC Tube Active PT 1200 V - - - Chassis Mount - Standard 130 A - - - - SOT-227B - - -
IXXN340N65B4

IXXN340N65B4

IGBT MODULE DISC IGBT SOT227B

IXYS

8,406 -
IXXN340N65B4

数据表

GenX4™, XPT™ SOT-227-4, miniBLOC Tube Active PT 650 V 1200 A 1.7V @ 15V, 160A 1500 W Chassis Mount 4.4mJ (on), 2.2mJ (off) Standard 520 A 553 nC 62ns/245ns - 400V, 100A, 1Ohm, 15V SOT-227B - 65 ns -55°C ~ 175°C (TJ)
RJQ7031PJWS-00#W0

RJQ7031PJWS-00#W0

POWER TRS1 CAR POWER IGBT DIO SA

Renesas Electronics Corporation

6,561 -
RJQ7031PJWS-00#W0

数据表

- - Tube Active - - - - - - - - - - - - - - - - -
APT150GN60LDQ4G

APT150GN60LDQ4G

IGBT TRENCH FS 600V 220A TO264

Microchip Technology

5,587 -
APT150GN60LDQ4G

数据表

- TO-264-3, TO-264AA Tube Active Trench Field Stop 600 V 450 A 1.85V @ 15V, 150A 536 W Through Hole 8.81mJ (on), 4.295mJ (off) Standard 220 A 970 nC 44ns/430ns - 400V, 150A, 1Ohm, 15V TO-264 [L] - - -55°C ~ 175°C (TJ)
IXGK82N120B3

IXGK82N120B3

IGBT 1200V 230A 1250W TO264

IXYS

6,253 -
IXGK82N120B3

数据表

GenX3™ TO-264-3, TO-264AA Tube Active PT 1200 V 500 A 3.2V @ 15V, 82A 1250 W Through Hole 5mJ (on), 3.3mJ (off) Standard 230 A 350 nC 30ns/210ns - 600V, 80A, 2Ohm, 15V TO-264 (IXGK) - - -55°C ~ 150°C (TJ)
MMIX1X200N60B3

MMIX1X200N60B3

IGBT 600V 223A 625W SMPD

IXYS

4,504 -
MMIX1X200N60B3

数据表

GenX3™, XPT™ 24-PowerSMD, 21 Leads Tube Active PT 600 V 1000 A 1.7V @ 15V, 100A 625 W Surface Mount 2.85mJ (on), 2.9mJ (off) Standard 223 A 315 nC 48ns/160ns - 360V, 100A, 1Ohm, 15V 24-SMPD - - -55°C ~ 175°C (TJ)
IXYA12N250CHV

IXYA12N250CHV

DISC IGBT XPT-HI VOLTAGE TO-263D

IXYS

9,764 -
IXYA12N250CHV

数据表

XPT™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active - 2500 V 80 A 4.5V @ 15V, 12A 310 W Surface Mount 3.56mJ (on), 1.7mJ (off) Standard 28 A 56 nC 12ns/167ns - 1250V, 12A, 10Ohm, 15V TO-263HV - 16 ns -55°C ~ 175°C (TJ)
IXGF25N300

IXGF25N300

IGBT 3000V 27A 114W I4-PAK

IXYS

9,305 -
IXGF25N300

数据表

- i4-Pac™-5 (3 Leads) Tube Obsolete - 3000 V 140 A 5.5V @ 15V, 75A 114 W Through Hole - Standard 27 A 75 nC - - - ISOPLUS i4-PAC™ - - -55°C ~ 150°C (TJ)
IXBT32N300

IXBT32N300

IGBT 3000V 80A TO268AA

IXYS

7,235 -
IXBT32N300

数据表

BIMOSFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active - 3000 V 280 A 3.2V @ 15V, 32A 400 W Surface Mount - Standard 80 A 142 nC - - - TO-268AA - 1.5 µs -55°C ~ 150°C (TJ)
IXYN120N65C3D1

IXYN120N65C3D1

IGBT PT 650V 190A SOT227B

IXYS

6,261 -
IXYN120N65C3D1

数据表

GenX3™, XPT™ SOT-227-4, miniBLOC Tube Obsolete PT 650 V 620 A 2.8V @ 15V, 100A 830 W Chassis Mount 1.25mJ (on), 500µJ (off) Standard 190 A 265 nC 28ns/127ns - 400V, 50A, 2Ohm, 15V SOT-227B - 29 ns -55°C ~ 175°C (TJ)
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