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单个 IGBTs

制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度
IXYX110N120A4

IXYX110N120A4

IGBT 1200V 110A GNX4 XPT PLUS247

IXYS

3,036 -
IXYX110N120A4

数据表

XPT™, GenX4™ TO-247-3 Tube Active PT 1200 V 900 A 1.8V @ 15V, 110A 1360 W Through Hole 2.5mJ (on), 8.4mJ (off) Standard 375 A 305 nC 42ns/550ns - 600V, 50A, 1.5Ohm, 15V TO-247 (IXTH) - - -55°C ~ 175°C (TJ)
IXG100IF1200HF

IXG100IF1200HF

IGBT PT 1200V 140A PLUS247-3

IXYS

8,030 -
IXG100IF1200HF

数据表

X2PT™ TO-247-3 Variant Tube Active PT 1200 V - - - Through Hole - Standard 140 A - - - - PLUS247™-3 - - -
IXGR60N60C3C1

IXGR60N60C3C1

IGBT 600V 75A 170W ISOPLUS247

IXYS

5,043 -
IXGR60N60C3C1

数据表

GenX3™ TO-247-3 Tube Obsolete PT 600 V 260 A 2.5V @ 15V, 40A 170 W Through Hole 830µJ (on), 450µJ (off) Standard 75 A 115 nC 24ns/70ns - 480V, 40A, 3Ohm, 15V ISOPLUS247™ - - -55°C ~ 150°C (TJ)
IPQ-5312-0-MRQFN251-TR-03-0

IPQ-5312-0-MRQFN251-TR-03-0

IPQ-5312-0-MRQFN251-TR-03-0.

Qualcomm

7,126 -
IPQ-5312-0-MRQFN251-TR-03-0

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPQ-5312-0-MRQFN251-MT-03-0

IPQ-5312-0-MRQFN251-MT-03-0

IPQ-5312-0-MRQFN251-MT-03-0.

Qualcomm

2,500 -
IPQ-5312-0-MRQFN251-MT-03-0

数据表

- - Tray Active - - - - - - - - - - - - - - - - -
APT40GP90B2DQ2G

APT40GP90B2DQ2G

IGBT PT 900V 101A

Microchip Technology

5,125 -
APT40GP90B2DQ2G

数据表

POWER MOS 7® TO-247-3 Variant Tube Active PT 900 V 160 A 3.9V @ 15V, 40A 543 W Through Hole 795µJ (off) Standard 101 A 145 nC 14ns/90ns - 600V, 40A, 4.3Ohm, 15V - - - -55°C ~ 150°C (TJ)
MMIX1X100N60B3H1

MMIX1X100N60B3H1

IGBT 600V 145A 400W SMPD

IXYS

8,122 -
MMIX1X100N60B3H1

数据表

GenX3™, XPT™ 24-PowerSMD, 21 Leads Tube Active - 600 V 440 A 1.8V @ 15V, 70A 400 W Surface Mount 1.9mJ (on), 2mJ (off) Standard 145 A 143 nC 30ns/120ns - 360V, 70A, 2Ohm, 15V 24-SMPD - 140 ns -55°C ~ 150°C (TJ)
APT50GT120LRDQ2G

APT50GT120LRDQ2G

IGBT NPT 1200V 106A TO264

Microchip Technology

7,239 -
APT50GT120LRDQ2G

数据表

Thunderbolt IGBT® TO-264-3, TO-264AA Tube Active NPT 1200 V 150 A 3.7V @ 15V, 50A 694 W Through Hole 2585µJ (on), 1910µJ (off) Standard 106 A 240 nC 23ns/215ns - 800V, 50A, 1Ohm, 15V TO-264 [L] - - -55°C ~ 150°C (TJ)
IXXK300N60C3

IXXK300N60C3

IGBT 600V 510A 2300W TO264

IXYS

9,828 -
IXXK300N60C3

数据表

GenX3™, XPT™ TO-264-3, TO-264AA Tube Active PT 600 V 1075 A 2V @ 15V, 100A 2300 W Through Hole 3.35mJ (on), 1.9mJ (off) Standard 510 A 438 nC 50ns/160ns - 400V, 100A, 1Ohm, 15V TO-264 (IXXK) - - -55°C ~ 175°C (TJ)
IXGK55N120A3H1

IXGK55N120A3H1

IGBT 1200V 125A 460W TO264

IXYS

9,423 -
IXGK55N120A3H1

数据表

GenX3™ TO-264-3, TO-264AA Tube Active PT 1200 V 400 A 2.3V @ 15V, 55A 460 W Through Hole 5.1mJ (on), 13.3mJ (off) Standard 125 A 185 nC 23ns/365ns - 960V, 55A, 3Ohm, 15V TO-264 (IXGK) - 200 ns -55°C ~ 150°C (TJ)
IXGK50N120C3H1

IXGK50N120C3H1

IGBT 1200V 95A 460W TO264

IXYS

7,632 -
IXGK50N120C3H1

数据表

GenX3™ TO-264-3, TO-264AA Tube Active PT 1200 V 240 A 4.2V @ 15V, 40A 460 W Through Hole 2mJ (on), 630µJ (off) Standard 95 A 196 nC 31ns/123ns - 600V, 40A, 2Ohm, 15V TO-264 (IXGK) - 75 ns -55°C ~ 150°C (TJ)
APT150GN60B2G

APT150GN60B2G

IGBT TRENCH FIELD STOP 600V 220A

Microchip Technology

7,893 -
APT150GN60B2G

数据表

- TO-247-3 Variant Tube Active Trench Field Stop 600 V 450 A 1.85V @ 15V, 150A 536 W Through Hole 8.81mJ (on), 4.295mJ (off) Standard 220 A 970 nC 44ns/430ns - 400V, 150A, 1Ohm, 15V - - - -55°C ~ 175°C (TJ)
IXRH40N120

IXRH40N120

IGBT 1200V 55A 300W TO247AD

IXYS

6,568 -
IXRH40N120

数据表

- TO-247-3 Bulk Obsolete NPT 1200 V - 2.7V @ 15V, 30A 300 W Through Hole 3mJ (on), 700µJ (off) Standard 55 A 90 nC - - 600V, 35A, 15Ohm, 15V TO-247AD - 2.1 µs -55°C ~ 150°C (TJ)
IXYN75N65C3D1

IXYN75N65C3D1

IGBT 650V 150A SOT227B

IXYS

7,163 -
IXYN75N65C3D1

数据表

XPT™, GenX3™ SOT-227-4, miniBLOC Tube Obsolete - 650 V 360 A 2.3V @ 15V, 60A 600 W Chassis Mount 2mJ (on), 950µJ (off) Standard 150 A 122 nC 26ns/93ns - 400V, 60A, 3Ohm, 15V SOT-227B - 65 ns -55°C ~ 175°C (TJ)
IXGR55N120A3H1

IXGR55N120A3H1

IGBT 1200V 70A 200W ISOPLUS247

IXYS

6,109 -
IXGR55N120A3H1

数据表

GenX3™ TO-247-3 Tube Active PT 1200 V 330 A 2.35V @ 15V, 55A 200 W Through Hole 5.1mJ (on), 13.3mJ (off) Standard 70 A 185 nC 23ns/365ns - 960V, 55A, 3Ohm, 15V ISOPLUS247™ - 200 ns -55°C ~ 150°C (TJ)
APT95GR65JDU60

APT95GR65JDU60

INSULATED GATE BIPOLAR TRANSISTO

Microsemi Corporation

7,057 -
APT95GR65JDU60

数据表

- SOT-227-4, miniBLOC Bulk Obsolete NPT 650 V 380 A 2.4V @ 15V, 95A 446 W Chassis Mount - Standard 135 A 420 nC 29ns/226ns - 433V, 95A, 4.3Ohm, 15V SOT-227 - - -55°C ~ 150°C (TJ)
APT50GF120B2RG

APT50GF120B2RG

IGBT NPT 1200V 135A

Microchip Technology

6,959 -
APT50GF120B2RG

数据表

- TO-247-3 Variant Tube Active NPT 1200 V 150 A 3V @ 15V, 50A 781 W Through Hole 3.6mJ (on), 2.64mJ (off) Standard 135 A 340 nC 25ns/260ns - 800V, 50A, 1Ohm, 15V - - - -55°C ~ 150°C (TJ)
IXSX50N60AU1

IXSX50N60AU1

IGBT 600V 75A 300W PLUS247

IXYS

3,625 -
IXSX50N60AU1

数据表

- TO-247-3 Variant Tube Obsolete - 600 V 200 A 2.7V @ 15V, 50A 300 W Through Hole 6mJ (off) Standard 75 A 190 nC 70ns/200ns - 480V, 50A, 2.7Ohm, 15V PLUS247™-3 - 50 ns -55°C ~ 150°C (TJ)
IXXX300N60C3

IXXX300N60C3

IGBT 600V 510A 2300W TO247

IXYS

3,247 -
IXXX300N60C3

数据表

GenX3™, XPT™ TO-247-3 Variant Tube Active PT 600 V 1075 A 2V @ 15V, 100A 2300 W Through Hole 3.35mJ (on), 1.9mJ (off) Standard 510 A 438 nC 50ns/160ns - 400V, 100A, 1Ohm, 15V PLUS247™-3 - - -55°C ~ 175°C (TJ)
IXGT25N250

IXGT25N250

IGBT 2500V TO-268

IXYS

3,361 -
IXGT25N250

数据表

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active NPT 2500 V - 2.9V @ 15V, 25A 250 W Surface Mount - Standard 60 A - - - - TO-268AA - - -
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