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单个 IGBTs

制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度
IXGX50N120C3H1

IXGX50N120C3H1

IGBT 1200V 95A 460W PLUS247

IXYS

9,934 -
IXGX50N120C3H1

数据表

GenX3™ TO-247-3 Variant Tube Active PT 1200 V 240 A 4.2V @ 15V, 40A 460 W Through Hole 2mJ (on), 630µJ (off) Standard 95 A 196 nC 31ns/123ns - 600V, 40A, 2Ohm, 15V PLUS247™-3 - 75 ns -55°C ~ 150°C (TJ)
APT85GR120L

APT85GR120L

IGBT NPT 1200V 170A TO264

Microchip Technology

4,533 -
APT85GR120L

数据表

- TO-264-3, TO-264AA Tube Active NPT 1200 V 340 A 3.2V @ 15V, 85A 962 W Through Hole 6mJ (on), 3.8mJ (off) Standard 170 A 660 nC 43ns/300ns - 600V, 85A, 4.3Ohm, 15V TO-264 - - -55°C ~ 150°C (TJ)
IRG4PSH71KD

IRG4PSH71KD

IGBT 1200V 78A 350W SUPER247

Infineon Technologies

6,864 -
IRG4PSH71KD

数据表

- TO-274AA Bag Obsolete - 1200 V 156 A 3.9V @ 15V, 42A 350 W Through Hole 5.68mJ (on), 3.23mJ (off) Standard 78 A 410 nC 67ns/230ns - 800V, 42A, 5Ohm, 15V SUPER-247™ (TO-274AA) - 107 ns -55°C ~ 150°C (TJ)
IXXK160N65C4

IXXK160N65C4

IGBT 650V 290A 940W TO264

IXYS

2,718 -
IXXK160N65C4

数据表

GenX4™, XPT™ TO-264-3, TO-264AA Tube Active PT 650 V 800 A 2.1V @ 15V, 160A 940 W Through Hole 3.5mJ (on), 1.3mJ (off) Standard 290 A 422 nC 52ns/197ns - 400V, 80A, 1Ohm, 15V TO-264 (IXXK) - - -55°C ~ 175°C (TJ)
IXGT32N170A

IXGT32N170A

IGBT NPT 1700V 32A TO268AA

IXYS

7,002 -
IXGT32N170A

数据表

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active NPT 1700 V 110 A 5V @ 15V, 21A 350 W Surface Mount 1.5mJ (off) Standard 32 A 155 nC 46ns/260ns - 850V, 32A, 2.7Ohm, 15V TO-268AA - - -55°C ~ 150°C (TJ)
APT35GP120BG

APT35GP120BG

IGBT PT 1200V 96A TO247

Microchip Technology

8,854 -
APT35GP120BG

数据表

POWER MOS 7® TO-247-3 Tube Active PT 1200 V 140 A 3.9V @ 15V, 35A 543 W Through Hole 750µJ (on), 680µJ (off) Standard 96 A 150 nC 16ns/94ns - 600V, 35A, 5Ohm, 15V TO-247 [B] - - -55°C ~ 150°C (TJ)
RJU7032PJWS-00#W0

RJU7032PJWS-00#W0

POWER TRS1 CAR POWER IGBT DIO SA

Renesas Electronics Corporation

5,267 -
RJU7032PJWS-00#W0

数据表

- - Tube Active - - - - - - - - - - - - - - - - -
IXYX300N65A3

IXYX300N65A3

DISC IGBT XPT-GENX3 TO-247AD

IXYS

5,772 -
IXYX300N65A3

数据表

XPT™, GenX3™ TO-247-3 Variant Tube Active PT 650 V 1460 A 1.6V @ 15V, 100A 2300 W Through Hole 7.8mJ (on), 4.7mJ (off) Standard 600 A 565 nC 42ns/190ns - 400V, 100A, 1Ohm, 15V PLUS247™-3 - 125 ns -55°C ~ 175°C (TJ)
IXYN150N60B3

IXYN150N60B3

IGBT

IXYS

3,062 -
IXYN150N60B3

数据表

XPT™, GenX3™ SOT-227-4, miniBLOC Tube Active - 600 V 750 A 2.2V @ 15V, 150A 830 W Chassis Mount 4.2mJ (on), 2.6mJ (off) Standard 250 A 260 nC 27ns/167ns - 400V, 75A, 2Ohm, 15V SOT-227B - 88 ns -55°C ~ 175°C (TJ)
APT75GN120B2G

APT75GN120B2G

IGBT TRENCH FIELD STP 1200V 200A

Microchip Technology

3,991 -
APT75GN120B2G

数据表

- TO-247-3 Variant Tube Active Trench Field Stop 1200 V 225 A 2.1V @ 15V, 75A 833 W Through Hole 8045µJ (on), 7640µJ (off) Standard 200 A 425 nC 60ns/620ns - 800V, 75A, 1Ohm, 15V - - - -55°C ~ 150°C (TJ)
IXXR100N60B3H1

IXXR100N60B3H1

IGBT 600V 145A 400W ISOPLUS247

IXYS

8,772 -
IXXR100N60B3H1

数据表

GenX3™, XPT™ TO-247-3 Tube Active PT 600 V 440 A 1.8V @ 15V, 70A 400 W Through Hole 1.9mJ (on), 2mJ (off) Standard 145 A 143 nC 30ns/120ns - 360V, 70A, 2Ohm, 15V ISOPLUS247™ - 140 ns -
IXYK300N65A3

IXYK300N65A3

DISC IGBT XPT-GENX3 TO-264(3)

IXYS

5,886 -
IXYK300N65A3

数据表

XPT™, GenX3™ TO-264-3, TO-264AA Tube Active PT 650 V 1460 A 1.6V @ 15V, 100A 2300 W Through Hole 7.8mJ (on), 4.7mJ (off) Standard 600 A 565 nC 42ns/190ns - 400V, 100A, 1Ohm, 15V PLUS264™ - 125 ns -55°C ~ 175°C (TJ)
IXBT12N300

IXBT12N300

IGBT 3000V 30A TO268AA

IXYS

9,116 -
IXBT12N300

数据表

BIMOSFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Not For New Designs - 3000 V 100 A 3.2V @ 15V, 12A 160 W Surface Mount - Standard 30 A 62 nC - - - TO-268AA - 1.4 µs -55°C ~ 150°C (TJ)
IXYR100N65A3V1

IXYR100N65A3V1

IGBT

IXYS

9,920 -
IXYR100N65A3V1

数据表

- - Tube Active - - - - - - - - - - - - - - - - -
IXGH30N60C3C1

IXGH30N60C3C1

IGBT 600V 60A 220W TO247

IXYS

4,255 -
IXGH30N60C3C1

数据表

GenX3™ TO-247-3 Tube Obsolete PT 600 V 150 A 3V @ 15V, 20A 220 W Through Hole 120µJ (on), 90µJ (off) Standard 60 A 38 nC 17ns/42ns - 300V, 20A, 5Ohm, 15V TO-247AD - - -55°C ~ 150°C (TJ)
IXXT100N75B4HV

IXXT100N75B4HV

IGBT DISCRETE TO-268HV

IXYS

5,513 -
IXXT100N75B4HV

数据表

- - Tube Active - - - - - - - - - - - - - - - - -
APT50GT120B2RDQ2G

APT50GT120B2RDQ2G

IGBT NPT 1200V 94A TO247

Microchip Technology

4,803 -
APT50GT120B2RDQ2G

数据表

Thunderbolt IGBT® TO-247-3 Tube Active NPT 1200 V 150 A 3.7V @ 15V, 50A 625 W Through Hole 2330µJ (off) Standard 94 A 340 nC 24ns/230ns - 800V, 50A, 4.7Ohm, 15V - - - -55°C ~ 150°C (TJ)
IXBT42N170A

IXBT42N170A

IGBT 1700V 42A TO268AA

IXYS

5,474 -
IXBT42N170A

数据表

BIMOSFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active - 1700 V 265 A 6V @ 15V, 21A 357 W Surface Mount 3.43mJ (on), 430µJ (off) Standard 42 A 188 nC 19ns/200ns - 850V, 21A, 1Ohm, 15V TO-268AA - 330 ns -55°C ~ 150°C (TJ)
APT45GP120BG

APT45GP120BG

IGBT PT 1200V 100A TO247

Microchip Technology

2,961 -
APT45GP120BG

数据表

POWER MOS 7® TO-247-3 Tube Active PT 1200 V 170 A 3.9V @ 15V, 45A 625 W Through Hole 900µJ (on), 904µJ (off) Standard 100 A 185 nC 18ns/102ns - 600V, 45A, 5Ohm, 15V TO-247 [B] - - -55°C ~ 150°C (TJ)
IXGH48N60B3C1

IXGH48N60B3C1

IGBT 600V 75A 300W TO247

IXYS

4,384 -
IXGH48N60B3C1

数据表

GenX3™ TO-247-3 Tube Obsolete PT 600 V 280 A 1.8V @ 15V, 32A 300 W Through Hole 450µJ (on), 660µJ (off) Standard 75 A 115 nC 22ns/130ns - 480V, 30A, 5Ohm, 15V TO-247AD - - -55°C ~ 150°C (TJ)
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