富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NTP2955

NTP2955

MOSFET P-CH 60V 2.4A TO220AB

onsemi

7,077 -
NTP2955

数据表

- TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 2.4A (Ta) 10V 196mOhm @ 12A, 10V Through Hole 4V @ 250µA 14 nC @ 10 V 60 V ±20V 700 pF @ 25 V - - TO-220 - 2.4W (Ta), 62.5W (Tc) -55°C ~ 175°C (TJ)
IRF5803TR

IRF5803TR

MOSFET P-CH 40V 3.4A MICRO6

Infineon Technologies

9,318 -
IRF5803TR

数据表

HEXFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.4A (Ta) 4.5V, 10V 112mOhm @ 3.4A, 10V Surface Mount 3V @ 250µA 37 nC @ 10 V 40 V ±20V 1110 pF @ 25 V - - Micro6™(TSOP-6) - 2W (Ta) -55°C ~ 150°C (TJ)
IXFV110N25TS

IXFV110N25TS

MOSFET N-CH 110A PLUS220

IXYS

8,464 -
IXFV110N25TS

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
MCU75N06Y-TP

MCU75N06Y-TP

MOSFET

Micro Commercial Co

7,360 -
MCU75N06Y-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 4.8mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 34.5 nC @ 10 V 60 V ±20V 1698 pF @ 30 V - - TO-252 (DPAK) - 100W (Tj) -55°C ~ 175°C (TJ)
IXFT28N50F

IXFT28N50F

MOSFET N-CH 28A TO268

IXYS

8,196 -
IXFT28N50F

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IXTA05N100P

IXTA05N100P

MOSFET N-CH 1000V 750MA TO263

IXYS

5,591 -
IXTA05N100P

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IXFT21N50

IXFT21N50

MOSFET N-CH 21A TO268

IXYS

9,366 -
IXFT21N50

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IXFH1988

IXFH1988

MOSFET N-CH 19A TO247

IXYS

4,059 -
IXFH1988

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IXFT21N50F

IXFT21N50F

MOSFET N-CH 21A TO268

IXYS

6,198 -
IXFT21N50F

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IXFV12N100P

IXFV12N100P

MOSFET N-CH 12A PLUS220

IXYS

8,815 -
IXFV12N100P

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IXFX44N50F

IXFX44N50F

MOSFET N-CH 44A PLUS247-3

IXYS

7,478 -
IXFX44N50F

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IXTA1N80P

IXTA1N80P

MOSFET N-CH TO263

IXYS

8,947 -
IXTA1N80P

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IXFN1993

IXFN1993

MOSFET N-CH 19A SOT-227B

IXYS

4,301 -
IXFN1993

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IXFP05N100M

IXFP05N100M

MOSFET N-CH TO220

IXYS

8,663 -
IXFP05N100M

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IXFJ26N50

IXFJ26N50

MOSFET N-CH 500V 14A TO247

IXYS

4,415 -
IXFJ26N50

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IXTA1970

IXTA1970

MOSFET N-CH TO263

IXYS

2,087 -
IXTA1970

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IXTA1970-TRL

IXTA1970-TRL

MOSFET N-CH TO263

IXYS

3,188 -
IXTA1970-TRL

数据表

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
IRF530N_R4942

IRF530N_R4942

MOSFET N-CH 100V 22A TO220-3

onsemi

6,848 -
IRF530N_R4942

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 22A (Tc) - 64mOhm @ 22A, 10V Through Hole 4V @ 250µA 52 nC @ 20 V 100 V - 790 pF @ 25 V - - TO-220-3 - - -
IPD031N03M G

IPD031N03M G

MOSFET N-CH 30V 90A TO252-3

Infineon Technologies

2,161 -
IPD031N03M G

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 3.1mOhm @ 30A, 10V Surface Mount 2.2V @ 250µA 51 nC @ 10 V 30 V ±20V 5300 pF @ 15 V - - PG-TO252-3-11 - - -55°C ~ 175°C (TJ)
STI4N62K3

STI4N62K3

MOSFET N-CH 620V 3.8A I2PAK

STMicroelectronics

4,262 -
STI4N62K3

数据表

SuperMESH3™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 3.8A (Tc) 10V 2Ohm @ 1.9A, 10V Through Hole 4.5V @ 50µA 22 nC @ 10 V 620 V ±30V 550 pF @ 50 V - - I2PAK - 70W (Tc) -55°C ~ 150°C (TJ)
共 36322 条记录«上一页1... 7273747576777879...1817下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户