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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
MCAC5D2N10YL-TP

MCAC5D2N10YL-TP

MOSFET N-CH 100 95A DFN5060

Micro Commercial Co

2,069 -
MCAC5D2N10YL-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 95A (Tc) 4.5V, 10V 5.2mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 64 nC @ 10 V 100 V ±20V 4050 pF @ 25 V - - DFN5060 - 104W (Tj) -55°C ~ 150°C (TJ)
SPN03N60C3

SPN03N60C3

MOSFET N-CH 650V 700MA SOT223-4

Infineon Technologies

6,487 -
SPN03N60C3

数据表

CoolMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 700mA (Ta) 10V 1.4Ohm @ 2A, 10V Surface Mount 3.9V @ 135µA 17 nC @ 10 V 650 V ±20V 400 pF @ 25 V - - PG-SOT223-4 - 1.8W (Ta) -55°C ~ 150°C (TJ)
IRF9520NPBF

IRF9520NPBF

MOSFET P-CH 100V 6.8A TO220AB

Infineon Technologies

8,226 -
IRF9520NPBF

数据表

HEXFET® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 6.8A (Tc) - 480mOhm @ 4A, 10V Through Hole 4V @ 250µA 27 nC @ 10 V 100 V - 350 pF @ 25 V - - TO-220AB - - -
AOW125A60

AOW125A60

MOSFET N-CH 600V 28A TO262

Alpha & Omega Semiconductor Inc.

7,987 -
AOW125A60

数据表

aMOS5™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 125mOhm @ 14A, 10V Through Hole 4.5V @ 250µA 39 nC @ 10 V 600 V ±20V 2993 pF @ 100 V - - TO-262 - 312.5W (Tc) -55°C ~ 150°C (TJ)
RFP15N05L

RFP15N05L

MOSFET N-CH 50V 15A TO220-3

onsemi

3,669 -
RFP15N05L

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 15A (Tc) 5V 140mOhm @ 15A, 5V Through Hole 2V @ 250µA - 50 V ±10V 900 pF @ 25 V - - TO-220-3 - 60W (Tc) -55°C ~ 150°C (TJ)
IPB180N06S4H1ATMA2

IPB180N06S4H1ATMA2

MOSFET N-CH 60V 180A TO263-7

Infineon Technologies

7,667 -
IPB180N06S4H1ATMA2

数据表

OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 1.7mOhm @ 100A, 10V Surface Mount 4V @ 200µA 270 nC @ 10 V 60 V ±20V 21900 pF @ 25 V AEC-Q101 - PG-TO263-7 Automotive 250W (Tc) -55°C ~ 175°C (TJ)
IRLL1503

IRLL1503

MOSFET N-CH 30V 75A SOT223

Infineon Technologies

7,670 -
IRLL1503

数据表

HEXFET® TO-261-4, TO-261AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Ta) - 3.3mOhm @ 140A, 10V Through Hole 4V @ 250µA 200 nC @ 10 V 30 V - 5730 pF @ 25 V - - SOT-223 - - -
TK170V65Z,LQ

TK170V65Z,LQ

MOSFET N-CH 650V 18A 5DFN

Toshiba Semiconductor and Storage

4,950 -
TK170V65Z,LQ

数据表

DTMOSVI 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Ta) 10V 170mOhm @ 9A, 10V Surface Mount 4V @ 730µA 29 nC @ 10 V 650 V ±30V 1635 pF @ 300 V - - 4-DFN-EP (8x8) - 150W (Tc) 150°C
IRFU15N20DPBF

IRFU15N20DPBF

MOSFET N-CH 200V 17A IPAK

Infineon Technologies

9,343 -
IRFU15N20DPBF

数据表

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 165mOhm @ 10A, 10V Through Hole 5.5V @ 250µA 41 nC @ 10 V 200 V ±30V 910 pF @ 25 V - - IPAK (TO-251AA) - 110W (Tc) -55°C ~ 175°C (TJ)
SUM70030M-GE3

SUM70030M-GE3

MOSFET N-CH 100V 150A TO263-7

Vishay Siliconix

1,070 -
SUM70030M-GE3

数据表

TrenchFET® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150A (Tc) - 3.5mOhm @ 30A, 10V Surface Mount 4V @ 250µA 214 nC @ 10 V 100 V ±20V 10870 pF @ 50 V - - TO-263-7 - 375W (Tc) -55°C ~ 175°C (TJ)
SIRA52DP-T1-RE3

SIRA52DP-T1-RE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix

5,703 -
SIRA52DP-T1-RE3

数据表

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 1.7mOhm @ 15A, 10V Surface Mount 2.4V @ 250µA 150 nC @ 10 V 40 V +20V, -16V 7150 pF @ 20 V - - PowerPAK® SO-8 - 48W (Tc) -55°C ~ 150°C (TJ)
IPP60R160C6XKSA1

IPP60R160C6XKSA1

MOSFET N-CH 600V 23.8A TO220-3

Infineon Technologies

488 -
IPP60R160C6XKSA1

数据表

CoolMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 23.8A (Tc) 10V 160mOhm @ 11.3A, 10V Through Hole 3.5V @ 750µA 75 nC @ 10 V 600 V ±20V 1660 pF @ 100 V - - PG-TO220-3 - 176W (Tc) -55°C ~ 150°C (TJ)
DMTH3004LPSQ-13

DMTH3004LPSQ-13

MOSFET N-CH 30V PWRDI5060

Diodes Incorporated

6,489 -
DMTH3004LPSQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Ta), 145A (Tc) 4.5V, 10V 3.8mOhm @ 20A, 10V Surface Mount 3V @ 250µA 43.7 nC @ 15 V 30 V +20V, -16V 2370 pF @ 15 V AEC-Q101 - PowerDI5060-8 Automotive 136W (Tc) -55°C ~ 175°C (TJ)
NP109N055PUK-E1-AY

NP109N055PUK-E1-AY

MOSFET N-CH 55V 110A TO263

Renesas Electronics Corporation

1,560 -
NP109N055PUK-E1-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 2.2mOhm @ 55A, 10V Surface Mount 4V @ 250µA 189 nC @ 10 V 55 V ±20V 11250 pF @ 25 V - - TO-263 - 1.8W (Ta), 250W (Tc) 175°C (TJ)
DMTH4004LK3-13

DMTH4004LK3-13

MOSFET N-CH 40V 100A TO252

Diodes Incorporated

5,338 -
DMTH4004LK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 3mOhm @ 50A, 10V Surface Mount 3V @ 250µA 83 nC @ 10 V 40 V ±20V 4450 pF @ 25 V AEC-Q101 - TO-252-3 Automotive 3.9W (Ta), 180W (Tc) -55°C ~ 175°C (TJ)
DMT8008LK3-13

DMT8008LK3-13

MOSFET BVDSS: 61V~100V TO252 T&R

Diodes Incorporated

5,221 -
DMT8008LK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 95A (Tc) 4.5V, 10V 7mOhm @ 14A, 10V Surface Mount 2.8V @ 250µA 41.2 nC @ 10 V 80 V ±20V 2345 pF @ 40 V - - TO-252 (DPAK) - 1.7W (Ta) -55°C ~ 150°C (TJ)
DMT8008SK3-13

DMT8008SK3-13

MOSFET BVDSS: 61V~100V TO252 T&R

Diodes Incorporated

8,090 -
DMT8008SK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 6V, 10V 7.8mOhm @ 14A, 10V Surface Mount 4V @ 1mA 34 nC @ 10 V 80 V ±20V 1950 pF @ 40 V - - TO-252 (DPAK) - 1.7W (Ta) -55°C ~ 150°C (TJ)
IRFB3607PBFXKMA1

IRFB3607PBFXKMA1

TRENCH 40<-<100V

Infineon Technologies

6,790 -
IRFB3607PBFXKMA1

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80A (Tj) 10V 9mOhm @ 46A, 10V Through Hole 4V @ 100µA 84 nC @ 10 V 75 V ±20V 3070 pF @ 50 V - - TO-220AB - 140W (Tc) -55°C ~ 175°C (TJ)
NTD4302

NTD4302

MOSFET N-CH 30V 8.4A/68A DPAK

onsemi

7,678 -
NTD4302

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.4A (Ta), 68A (Tc) 4.5V, 10V 10mOhm @ 20A, 10V Surface Mount 3V @ 250µA 80 nC @ 10 V 30 V ±20V 2400 pF @ 24 V - - DPAK - 1.04W (Ta), 75W (Tc) -55°C ~ 150°C (TJ)
IPA65R1K5CEXKSA1

IPA65R1K5CEXKSA1

MOSFET N-CH 650V 5.2A TO220

Infineon Technologies

8,022 -
IPA65R1K5CEXKSA1

数据表

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.2A (Tc) 10V 1.5Ohm @ 1A, 10V Through Hole 3.5V @ 130µA 10.5 nC @ 10 V 650 V ±20V 225 pF @ 100 V - - PG-TO220-FP - 30W (Tc) -40°C ~ 150°C (TJ)
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