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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NTD18N06L-001

NTD18N06L-001

MOSFET N-CH 60V 18A IPAK

onsemi

4,629 -
NTD18N06L-001

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 18A (Ta) 5V 65mOhm @ 9A, 5V Through Hole 2V @ 250µA 22 nC @ 5 V 60 V ±15V 675 pF @ 25 V - - IPAK - 2.1W (Ta), 55W (Tj) -55°C ~ 175°C (TJ)
DMTH10H010LPS-13

DMTH10H010LPS-13

MOSFET N-CH 100V PWRDI5060

Diodes Incorporated

7,782 -
DMTH10H010LPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10.8A (Ta), 98.4A (Tc) 4.5V, 10V 8.6mOhm @ 13A, 10V Surface Mount 3V @ 250µA 53.7 nC @ 10 V 100 V ±20V 2592 pF @ 50 V AEC-Q101 - PowerDI5060-8 Automotive 1.5W, 125W (Tc) -55°C ~ 175°C (TJ)
FQD9N25TM-F080

FQD9N25TM-F080

MOSFET N-CH 250V 7.4A DPAK

onsemi

7,024 -
FQD9N25TM-F080

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.4A (Tc) 10V 420mOhm @ 3.7A, 10V Surface Mount 5V @ 250µA 20 nC @ 10 V 250 V ±30V 700 pF @ 25 V - - TO-252AA - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ)
AON7510

AON7510

MOSFET N-CH 30V 45A/75A 8DFN

Alpha & Omega Semiconductor Inc.

9,775 -
AON7510

数据表

AlphaMOS 8-PowerWDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 45A (Ta), 75A (Tc) 4.5V, 10V 1.25mOhm @ 20A, 10V Surface Mount 2V @ 250µA 140 nC @ 10 V 30 V ±20V 4500 pF @ 15 V - - 8-DFN-EP (3.3x3.3) - 4.1W (Ta), 46W (Tc) -55°C ~ 150°C (TJ)
STD70NH02LT4

STD70NH02LT4

MOSFET N-CH 24V 60A DPAK

STMicroelectronics

9,803 -
STD70NH02LT4

数据表

STripFET™ II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 5V, 10V 8mOhm @ 30A, 10V Surface Mount 1.8V @ 250µA 22 nC @ 10 V 24 V ±20V 2050 pF @ 25 V - - DPAK - 70W (Tc) -55°C ~ 175°C (TJ)
FDS7096N3

FDS7096N3

MOSFET N-CH 30V 14A 8SOIC

onsemi

9,693 -
FDS7096N3

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta) 4.5V, 10V 9mOhm @ 14A, 10V Surface Mount 3V @ 250µA 22 nC @ 5 V 30 V ±20V 1587 pF @ 15 V - - 8-SOIC - 3W (Ta) -55°C ~ 150°C (TJ)
IPF009N04NF2SATMA1

IPF009N04NF2SATMA1

TRENCH <= 40V

Infineon Technologies

650 -
IPF009N04NF2SATMA1

数据表

StrongIRFET™2 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 49A (Ta), 302A (Tc) 6V, 10V 0.9mOhm @ 100A, 10V Surface Mount 3.4V @ 249µA 315 nC @ 10 V 40 V ±20V 15000 pF @ 20 V - - PG-TO263-7-U02 - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ)
IRFBE30STRLPBF

IRFBE30STRLPBF

MOSFET N-CH 800V 4.1A D2PAK

Vishay Siliconix

700 -
IRFBE30STRLPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V Surface Mount 4V @ 250µA 78 nC @ 10 V 800 V ±20V 1300 pF @ 25 V - - TO-263 (D2PAK) - 125W (Tc) -55°C ~ 150°C (TJ)
SIHG180N60E-GE3

SIHG180N60E-GE3

MOSFET N-CH 600V 19A TO247AC

Vishay Siliconix

329 -
SIHG180N60E-GE3

数据表

E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 180mOhm @ 9.5A, 10V Through Hole 5V @ 250µA 33 nC @ 10 V 600 V ±30V 1085 pF @ 100 V - - TO-247AC - 156W (Tc) -55°C ~ 150°C (TJ)
IXFP7N80P

IXFP7N80P

MOSFET N-CH 800V 7A TO220AB

Littelfuse Inc.

299 -
IXFP7N80P

数据表

HiPerFET™, Polar TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 1.44Ohm @ 3.5A, 10V Through Hole 5V @ 1mA 32 nC @ 10 V 800 V ±30V 1890 pF @ 25 V - - TO-220-3 - 200W (Tc) -55°C ~ 150°C (TJ)
STP80N240K6

STP80N240K6

N-CHANNEL 800 V, 197 MOHM TYP.,

STMicroelectronics

973 -
STP80N240K6

数据表

MDmesh™ K6 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 220mOhm @ 7A, 10V Through Hole 4V @ 100µA 25.9 nC @ 10 V 800 V ±30V 1350 pF @ 100 V - - TO-220 - 140W (Tc) -55°C ~ 150°C (TJ)
IRFS9N60ATRLPBF

IRFS9N60ATRLPBF

MOSFET N-CH 600V 9.2A D2PAK

Vishay Siliconix

950 -
IRFS9N60ATRLPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V Surface Mount 4V @ 250µA 49 nC @ 10 V 600 V ±30V 1400 pF @ 25 V - - TO-263 (D2PAK) - 170W (Tc) -55°C ~ 150°C (TJ)
IPP60R125CFD7XKSA1

IPP60R125CFD7XKSA1

MOSFET N-CH 600V 18A TO220-3

Infineon Technologies

287 -
IPP60R125CFD7XKSA1

数据表

OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 125mOhm @ 7.8A, 10V Through Hole 4.5V @ 390µA 36 nC @ 10 V 600 V ±20V 1503 pF @ 400 V - - PG-TO220-3 - 92W (Tc) -55°C ~ 150°C (TJ)
IXFP14N85X

IXFP14N85X

MOSFET N-CH 850V 14A TO220AB

Littelfuse Inc.

395 -
IXFP14N85X

数据表

HiPerFET™, Ultra X TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 550mOhm @ 500mA, 10V Through Hole 5.5V @ 1mA 30 nC @ 10 V 850 V ±30V 1043 pF @ 25 V - - TO-220AB (IXFP) - 460W (Tc) -55°C ~ 150°C (TJ)
STFU13N80K5

STFU13N80K5

MOSFET N-CH 800V 12A TO220FP

STMicroelectronics

899 -
STFU13N80K5

数据表

MDmesh™ K5 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 450mOhm @ 6A, 10V Through Hole 5V @ 100µA 29 nC @ 10 V 800 V ±30V 870 pF @ 100 V - - TO-220FP - 35W (Tc) -55°C ~ 150°C (TJ)
STP25N80K5

STP25N80K5

MOSFET N-CH 800V 19.5A TO220

STMicroelectronics

1,000 -
STP25N80K5

数据表

SuperMESH5™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 19.5A (Tc) 10V 260mOhm @ 19.5A, 10V Through Hole 5V @ 100µA 40 nC @ 10 V 800 V ±30V 1600 pF @ 100 V - - TO-220 - 250W (Tc) -55°C ~ 150°C (TJ)
R6030JNZC17

R6030JNZC17

MOSFET N-CH 600V 30A TO3PF

Rohm Semiconductor

300 -
R6030JNZC17

数据表

- TO-3P-3 Full Pack Bag Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 15V 143mOhm @ 15A, 15V Through Hole 7V @ 5.5mA 74 nC @ 15 V 600 V ±30V 2500 pF @ 100 V - - TO-3PF - 93W (Tc) 150°C (TJ)
TK160F10N1,LXGQ

TK160F10N1,LXGQ

MOSFET N-CH 100V 160A TO220SM

Toshiba Semiconductor and Storage

4,477 -
TK160F10N1,LXGQ

数据表

U-MOSVIII-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 160A (Ta) 10V 2.4mOhm @ 80A, 10V Surface Mount 4V @ 1mA 121 nC @ 10 V 100 V ±20V 8510 pF @ 10 V - - TO-220SM(W) - 375W (Tc) 175°C
BUK7S1R2-40HJ

BUK7S1R2-40HJ

MOSFET N-CH 40V 300A LFPAK88

Nexperia USA Inc.

4,578 -
BUK7S1R2-40HJ

数据表

- SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 300A (Tc) 10V 1.2mOhm @ 25A, 10V Surface Mount 3.6V @ 1mA 112 nC @ 10 V 40 V +20V, -10V 8420 pF @ 25 V AEC-Q101 - LFPAK88 (SOT1235) Automotive 294W (Tc) -55°C ~ 175°C (TJ)
TK22A65X,S5X

TK22A65X,S5X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

183 -
TK22A65X,S5X

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 22A (Ta) 10V 150mOhm @ 11A, 10V Through Hole 3.5V @ 1.1mA 50 nC @ 10 V 650 V ±30V 2400 pF @ 300 V - - TO-220SIS - 45W (Tc) 150°C
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