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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPD50R1K4CEBTMA1

IPD50R1K4CEBTMA1

MOSFET N-CH 500V 3.1A TO252-3

Infineon Technologies

5,117 -
IPD50R1K4CEBTMA1

数据表

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.1A (Tc) 13V 1.4Ohm @ 900mA, 13V Surface Mount 3.5V @ 70µA 1 nC @ 10 V 500 V ±20V 178 pF @ 100 V - - PG-TO252-3 - 25W (Tc) -55°C ~ 150°C (TJ)
SI1414DH-T1-GE3

SI1414DH-T1-GE3

MOSFET N-CH 30V 4A SOT-363

Vishay Siliconix

7,978 -
SI1414DH-T1-GE3

数据表

TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 1.8V, 4.5V 46mOhm @ 4A, 4.5V Surface Mount 1V @ 250µA 15 nC @ 8 V 30 V ±8V 560 pF @ 15 V - - SC-70-6 - 2.8W (Tc) -55°C ~ 150°C (TJ)
SI4048DY-T1-GE3

SI4048DY-T1-GE3

MOSFET N-CH 30V 19.3A 8SO

Vishay Siliconix

6,541 -
SI4048DY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 19.3A (Tc) 10V 85mOhm @ 15A, 10V Surface Mount 3V @ 250µA 51 nC @ 10 V 30 V ±20V 2060 pF @ 15 V - - 8-SOIC - 2.5W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ)
CPH3351-TL-W

CPH3351-TL-W

MOSFET P-CH 60V 1.8A 3CPH

onsemi

6,768 -
CPH3351-TL-W

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.8A (Ta) 4V, 10V 250mOhm @ 1A, 10V Surface Mount 2.6V @ 1mA 6 nC @ 10 V 60 V ±20V 262 pF @ 20 V - - 3-CPH - 1W (Ta) 150°C (TJ)
DMP2088LCP3-7

DMP2088LCP3-7

MOSFET P-CH 20V 2.9A X2DSN1006-3

Diodes Incorporated

4,218 -
DMP2088LCP3-7

数据表

- 3-XFDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.9A (Ta) 1.8V, 8V 88mOhm @ 500mA, 8V Surface Mount 1.2V @ 250µA 1.5 nC @ 4.5 V 20 V -12V 160 pF @ 10 V - - X2-DSN1006-3 - 1.13W -55°C ~ 150°C (TJ)
PJA3460-AU_R1_000A1

PJA3460-AU_R1_000A1

SOT-23, MOSFET

Panjit International Inc.

6,788 -
PJA3460-AU_R1_000A1

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.5A (Ta) 4.5V, 10V 75mOhm @ 2A, 10V Surface Mount 2.5V @ 250µA 9.3 nC @ 10 V 60 V ±20V 509 pF @ 15 V AEC-Q101 - SOT-23 Automotive 1.25W (Ta) -55°C ~ 150°C (TJ)
MCAC115P02-TP

MCAC115P02-TP

MOSFET P-CH 20 115A DFN5060

Micro Commercial Co

3,287 -
MCAC115P02-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 115A (Tc) 4.5V, 10V 3.2mOhm @ 57.5A, 10V Surface Mount 900mV @ 250µA 221 nC @ 10 V 20 V ±10V 5830 pF @ 10 V - - DFN5060 - 83.3W (Tj) -55°C ~ 150°C (TJ)
FCMT299N60

FCMT299N60

MOSFET N-CH 600V 12A POWER88

onsemi

2,390 -
FCMT299N60

数据表

SuperFET® II 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Ta) 10V 299mOhm @ 6A, 10V Surface Mount 3.5V @ 250µA 51 nC @ 10 V 600 V ±20V 1948 pF @ 380 V - - Power88 - 125W (Tc) -55°C ~ 150°C (TJ)
STL13NM60N

STL13NM60N

MOSFET N-CH 600V 10A PWRFLAT HV

STMicroelectronics

2,811 -
STL13NM60N

数据表

MDmesh™ II 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 385mOhm @ 5A, 10V Surface Mount 4V @ 250µA 30 nC @ 10 V 600 V ±30V 790 pF @ 50 V - - PowerFlat™ (8x8) HV - 3W (Ta), 90W (Tc) 150°C (TJ)
FCPF260N60E

FCPF260N60E

MOSFET N CH 600V 15A TO-220F

onsemi

1,867 -
FCPF260N60E

数据表

SuperFET® II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tj) 10V 260mOhm @ 7.5A, 10V Through Hole 3.5V @ 250µA 62 nC @ 10 V 600 V ±20V 2500 pF @ 25 V - - TO-220FP - 36W (Tc) -55°C ~ 150°C (TJ)
IXTP20N65X2

IXTP20N65X2

MOSFET N-CH 650V 20A TO220AB

Littelfuse Inc.

277 -
IXTP20N65X2

数据表

Ultra X2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 185mOhm @ 10A, 10V Through Hole 4.5V @ 250µA 27 nC @ 10 V 650 V ±30V 1450 pF @ 25 V - - TO-220 - 290W (Tc) -55°C ~ 150°C (TJ)
SQM120N04-1M7L_GE3

SQM120N04-1M7L_GE3

MOSFET N-CH 40V 120A TO263

Vishay Siliconix

2,178 -
SQM120N04-1M7L_GE3

数据表

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 1.7mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 285 nC @ 10 V 40 V ±20V 14606 pF @ 20 V - - TO-263 - 375W (Tc) -55°C ~ 175°C (TJ)
NTMFS7D8N10GTWG

NTMFS7D8N10GTWG

N-CHANNEL SHIELDED GATE POWERTRE

onsemi

2,937 -
NTMFS7D8N10GTWG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Ta), 110A (Tc) 10V 7.6mOhm @ 48A, 10V Surface Mount 4V @ 254µA 92 nC @ 10 V 100 V ±20V 6180 pF @ 50 V - - 8-PQFN (5x6) - 3W (Ta), 187W (Tc) -55°C ~ 175°C (TJ)
IPT60R125CFD7XTMA1

IPT60R125CFD7XTMA1

MOSFET N-CH 600V 21A 8HSOF

Infineon Technologies

1,989 -
IPT60R125CFD7XTMA1

数据表

CoolMOS™ CFD7 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V 125mOhm @ 6.8A, 10V Surface Mount 4.5V @ 340µA 31 nC @ 10 V 600 V ±20V 1330 pF @ 400 V - - PG-HSOF-8-2 - 127W (Tc) -55°C ~ 150°C (TJ)
R6012JNJGTL

R6012JNJGTL

MOSFET N-CH 600V 12A LPTS

Rohm Semiconductor

1,296 -
R6012JNJGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 15V 390mOhm @ 6A, 15V Surface Mount 7V @ 2.5mA 28 nC @ 15 V 600 V ±30V 900 pF @ 100 V - - LPTS - 160W (Tc) -55°C ~ 150°C (TJ)
FCPF150N65F

FCPF150N65F

MOSFET N-CH 650V 14.9A TO220F

onsemi

990 -
FCPF150N65F

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 14.9A (Tc) 10V 150mOhm @ 12A, 10V Through Hole 5V @ 2.4mA 94 nC @ 10 V 650 V ±20V 3737 pF @ 100 V - - TO-220F-3 - 39W (Tc) -55°C ~ 150°C (TJ)
SIHA22N60EF-GE3

SIHA22N60EF-GE3

MOSFET N-CH 600V 19A TO220

Vishay Siliconix

929 -
SIHA22N60EF-GE3

数据表

EF TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 182mOhm @ 11A, 10V Through Hole 4V @ 250µA 96 nC @ 10 V 600 V ±30V 1423 pF @ 100 V - - TO-220 Full Pack - 33W (Tc) -55°C ~ 150°C (TJ)
SIHA24N80AE-GE3

SIHA24N80AE-GE3

MOSFET N-CH 800V 9A TO220

Vishay Siliconix

752 -
SIHA24N80AE-GE3

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 9A (Tc) - 184mOhm @ 10A, 10V Through Hole 4V @ 250µA 89 nC @ 10 V 800 V ±30V 1836 pF @ 100 V - - TO-220 Full Pack - 35W (Tc) -55°C ~ 150°C (TJ)
R8006KND3TL1

R8006KND3TL1

HIGH-SPEED SWITCHING NCH 800V 6A

Rohm Semiconductor

1,386 -
R8006KND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Ta) 10V 900mOhm @ 3A, 10V Surface Mount 4.5V @ 4mA 22 nC @ 10 V 800 V ±20V 650 pF @ 100 V - - TO-252 - 83W (Tc) 150°C (TJ)
IPF023N08NF2SATMA1

IPF023N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-7

Infineon Technologies

800 -
IPF023N08NF2SATMA1

数据表

StrongIRFET™ 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 209A (Tc) 6V, 10V 2.3mOhm @ 100A, 10V Surface Mount 3.8V @ 139µA 133 nC @ 10 V 80 V ±20V 6200 pF @ 40 V - - PG-TO263-7-14 - 214W (Tc) -55°C ~ 175°C (TJ)
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