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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRF6100

IRF6100

MOSFET P-CH 20V 5.1A 4FLIPFET

Infineon Technologies

4,825 -
IRF6100

数据表

HEXFET® 4-FlipFet™ Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.1A (Ta) 2.5V, 4.5V 65mOhm @ 5.1A, 4.5V Surface Mount 1.2V @ 250µA 21 nC @ 5 V 20 V ±12V 1230 pF @ 15 V - - 4-FlipFet™ - 2.2W (Ta) -55°C ~ 150°C (TJ)
AON6226

AON6226

MOSFET N-CHANNEL 100V 48A 8DFN

Alpha & Omega Semiconductor Inc.

9,340 -
AON6226

数据表

AlphaSGT™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 48A (Tc) 4.5V, 10V 7.9mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 60 nC @ 10 V 100 V ±20V 3130 pF @ 50 V - - 8-DFN (5x6) - 108W (Tc) -55°C ~ 150°C (TJ)
STF10P6F6

STF10P6F6

MOSFET P-CH 60V 10A TO220FP

STMicroelectronics

6,224 -
STF10P6F6

数据表

DeepGATE™, STripFET™ VI TO-220-3 Full Pack Tube Obsolete P-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 160mOhm @ 5A, 10V Through Hole 4V @ 250µA 6.4 nC @ 10 V 60 V ±20V 340 pF @ 48 V - - TO-220FP - 20W (Tc) 150°C (TJ)
DMTH3002LK3-13

DMTH3002LK3-13

MOSFET BVDSS: 25V~30V TO252 T&R

Diodes Incorporated

9,101 -
DMTH3002LK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150A (Tc) 4.5V, 10V 2.45mOhm @ 25A, 10V Surface Mount 2V @ 1mA 69 nC @ 15 V 30 V ±16V 4336 pF @ 15 V - - TO-252 (DPAK) - 1.9W (Ta) -55°C ~ 175°C (TJ)
IRF7807TR

IRF7807TR

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies

8,833 -
IRF7807TR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V Surface Mount 1V @ 250µA 17 nC @ 5 V 30 V ±12V - - - 8-SOIC - 2.5W (Ta) -55°C ~ 155°C (TJ)
RX3G18BGNC16

RX3G18BGNC16

NCH 40V 180A, TO-220AB, POWER MO

Rohm Semiconductor

2,896 -
RX3G18BGNC16

数据表

- TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 180A (Tc) 4.5V, 10V 1.64mOhm @ 90A, 10V Through Hole 2.5V @ 1mA 168 nC @ 10 V 40 V ±20V 12000 pF @ 20 V - - TO-220AB - 125W (Tc) 150°C (TJ)
R6018VNXC7G

R6018VNXC7G

600V 10A TO-220FM, PRESTOMOS WIT

Rohm Semiconductor

1,050 -
R6018VNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V, 15V 204mOhm @ 4A, 15V Through Hole 6.5V @ 600µA 27 nC @ 10 V 600 V ±30V 1250 pF @ 100 V - - TO-220FM - 61W (Tc) 150°C (TJ)
R6009ENX

R6009ENX

MOSFET N-CH 600V 9A TO220FM

Rohm Semiconductor

188 -
R6009ENX

数据表

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 535mOhm @ 2.8A, 10V Through Hole 4V @ 1mA 23 nC @ 10 V 600 V ±20V 430 pF @ 25 V - - TO-220FM - 40W (Tc) 150°C (TJ)
RS6G120BGTB1

RS6G120BGTB1

NCH 40V 210A, HSOP8, POWER MOSFE

Rohm Semiconductor

2,094 -
RS6G120BGTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 1.34mOhm @ 90A, 10V Surface Mount 2.5V @ 1mA 67 nC @ 10 V 40 V ±20V 4240 pF @ 20 V - - 8-HSOP - 104W (Tc) 150°C (TJ)
IXTA340N04T4-TRL

IXTA340N04T4-TRL

MOSFET N-CH TO263

IXYS

7,679 -
IXTA340N04T4-TRL

数据表

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
IXFH50N80XA

IXFH50N80XA

MOSFET N-CH 50A TO247

IXYS

2,833 -
IXFH50N80XA

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IXTA1N100-TRL

IXTA1N100-TRL

MOSFET N-CH TO263

IXYS

5,127 -
IXTA1N100-TRL

数据表

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
IXTH1918

IXTH1918

MOSFET N-CH TO247

IXYS

7,138 -
IXTH1918

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IXTC110N055T

IXTC110N055T

MOSFET N-CH ISOPLUS220

IXYS

2,307 -
IXTC110N055T

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IXFT68N20

IXFT68N20

MOSFET N-CH 68A TO268

IXYS

4,125 -
IXFT68N20

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
AOTF8N50

AOTF8N50

MOSFET N-CH 500V 8A TO220-3F

Alpha & Omega Semiconductor Inc.

6,865 -
AOTF8N50

数据表

- TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 850mOhm @ 4A, 10V Through Hole 4.5V @ 250µA 28 nC @ 10 V 500 V ±30V 1042 pF @ 25 V - - TO-220F - 38.5W (Tc) -55°C ~ 150°C (TJ)
AOT2910L

AOT2910L

MOSFET N CH 100V 6A TO220

Alpha & Omega Semiconductor Inc.

5,827 -
AOT2910L

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 6A (Ta), 30A (Tc) 4.5V, 10V 24mOhm @ 20A, 10V Through Hole 2.7V @ 250µA 25 nC @ 10 V 100 V ±20V 1190 pF @ 50 V - - TO-220 - 2.1W (Ta), 50W (Tc) -55°C ~ 175°C (TJ)
TSM7N65ACI C0G

TSM7N65ACI C0G

MOSFET N-CH 650V 7A ITO220AB

Taiwan Semiconductor Corporation

6,539 -
TSM7N65ACI C0G

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 1.45Ohm @ 3A, 10V Through Hole 4V @ 250µA 27.8 nC @ 10 V 650 V ±30V 1406 pF @ 25 V - - ITO-220AB - 40W (Tc) -55°C ~ 150°C (TJ)
STS4DNFS30L

STS4DNFS30L

MOSFET N-CH 30V 4A 8SO

STMicroelectronics

5,214 -
STS4DNFS30L

数据表

STripFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 5V, 10V 55mOhm @ 2A, 10V Surface Mount 1V @ 250µA 9 nC @ 5 V 30 V ±16V 330 pF @ 25 V - Schottky Diode (Isolated) 8-SOIC - 2W (Tc) -55°C ~ 150°C (TJ)
FQP55N06

FQP55N06

MOSFET N-CH 60V 55A TO220-3

onsemi

4,454 -
FQP55N06

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55A (Tc) 10V 20mOhm @ 27.5A, 10V Through Hole 4V @ 250µA 46 nC @ 10 V 60 V ±25V 1690 pF @ 25 V - - TO-220-3 - 133W (Tc) -55°C ~ 175°C (TJ)
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