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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
DMN2710UFBQ-7B

DMN2710UFBQ-7B

MOSFET BVDSS: 8V~24V X1-DFN1006-

Diodes Incorporated

8,466 -
DMN2710UFBQ-7B

数据表

- 3-UFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.3A (Ta) 1.8V, 4.5V 450mOhm @ 600mA, 4.5V Surface Mount 1V @ 250µA 0.6 nC @ 4.5 V 20 V ±6V 42 pF @ 16 V AEC-Q101 - X1-DFN1006-3 Automotive 720mW (Ta) -55°C ~ 150°C (TJ)
FDB075N15A-F085C

FDB075N15A-F085C

MODULE

onsemi

9,086 -
FDB075N15A-F085C

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
AOTF12N50L

AOTF12N50L

MOSFET

Alpha & Omega Semiconductor Inc.

2,030 -
AOTF12N50L

数据表

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 520mOhm @ 6A, 10V Through Hole 4.5V @ 250µA 37 nC @ 10 V 500 V ±30V 1633 pF @ 25 V - - TO-220F - 50W -55°C ~ 150°C (TJ)
DI110N03PQ

DI110N03PQ

MOSFET POWERQFN 5X6 N 30V

Diotec Semiconductor

7,725 -
DI110N03PQ

数据表

- 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 110A (Tc) 4.5V, 10V 2.65mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 14 nC @ 4.5 V 30 V ±20V 1860 pF @ 15 V - - 8-QFN (5x6) - 56W (Tc) -55°C ~ 150°C (TJ)
DMTH6005LFGQ-7

DMTH6005LFGQ-7

MOSFET BVDSS: 41V~60V POWERDI333

Diodes Incorporated

7,998 -
DMTH6005LFGQ-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Ta), 98A (Tc) 4.5V, 10V 4.1mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 47.5 nC @ 10 V 60 V ±20V 3223 pF @ 30 V AEC-Q101 - POWERDI3333-8 Automotive 2.38W (Ta), 75W (Tc) -55°C ~ 175°C (TJ)
AOTF14N50L

AOTF14N50L

MOSFET

Alpha & Omega Semiconductor Inc.

4,893 -
AOTF14N50L

数据表

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tj) 10V 380mOhm @ 7A, 10V Through Hole 4.5V @ 250µA 51 nC @ 10 V 500 V ±30V 2297 pF @ 25 V - - TO-220F - 50W -55°C ~ 150°C (TJ)
NVMFS5C430NLT3G

NVMFS5C430NLT3G

MOSFET N-CH 40V 200A 5DFN

onsemi

6,817 -
NVMFS5C430NLT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200A (Tc) 4.5V, 10V 1.5mOhm @ 50A, 10V Surface Mount 2V @ 250µA 70 nC @ 10 V 40 V ±20V 4300 pF @ 20 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ)
AOD1N60M

AOD1N60M

MOSFET

Alpha & Omega Semiconductor Inc.

8,377 -
AOD1N60M

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 1.3A (Tc) 10V 9Ohm @ 650mA, 10V Surface Mount 4.5V @ 250µA 8 nC @ 10 V 600 V ±30V 160 pF @ 25 V - - TO-252 (DPAK) - 45W (Tc) -50°C ~ 150°C (TJ)
IRF7422D2TR

IRF7422D2TR

MOSFET P-CH 20V 4.3A 8SO

Infineon Technologies

8,092 -
IRF7422D2TR

数据表

FETKY™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4.3A (Ta) 2.7V, 4.5V 90mOhm @ 2.2A, 4.5V Surface Mount 700mV @ 250µA (Min) 22 nC @ 4.5 V 20 V ±12V 610 pF @ 15 V - Schottky Diode (Isolated) 8-SO - 2W (Ta) -55°C ~ 150°C (TJ)
AOTF42S60

AOTF42S60

MOSFET

Alpha & Omega Semiconductor Inc.

9,205 -
AOTF42S60

数据表

aMOS™ TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 39A 10V 99mOhm @ 21A, 10V Through Hole 3.8V @ 250µA 40 nC @ 10 V 600 V ±30V 2154 pF @ 100 V - - TO-220F - 50W -55°C ~ 150°C (TJ)
RCD050N20TL

RCD050N20TL

MOSFET N-CH 200V 5A CPT3

Rohm Semiconductor

2,010 -
RCD050N20TL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 5A (Ta) 10V 618mOhm @ 2.5A, 10V Surface Mount 5.25V @ 1mA 9 nC @ 10 V 200 V ±30V 380 pF @ 25 V - - CPT3 - 20W (Tc) 150°C (TJ)
AOTF11N60

AOTF11N60

MOSFET

Alpha & Omega Semiconductor Inc.

2,896 -
AOTF11N60

数据表

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 11A 10V 650mOhm @ 5.5A, 10V Through Hole 4.5V @ 250µA 30.6 nC @ 10 V 600 V ±30V 1656 pF @ 25 V - - TO-220F - 50W -55°C ~ 150°C
AOTF15S60

AOTF15S60

MOSFET

Alpha & Omega Semiconductor Inc.

8,866 -
AOTF15S60

数据表

aMOS™ TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 290mOhm @ 7.5A, 10V Through Hole 3.8V @ 250µA 15.6 nC @ 10 V 600 V ±30V 717 pF @ 100 V - - TO-220F - 27.8W (Tc) -55°C ~ 150°C (TJ)
SISC262SN06LX6SA1

SISC262SN06LX6SA1

MOSFET

Infineon Technologies

9,641 -
SISC262SN06LX6SA1

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
FMD15-06KC5-PT

FMD15-06KC5-PT

MOSFET

IXYS

3,607 -
FMD15-06KC5-PT

数据表

CoolMOS™, HiPerDyn™ ISOPLUSi5-PAK™ Bulk Obsolete N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 165mOhm @ 12A, 10V Through Hole 3.5V @ 790µA 52 nC @ 10 V 600 V ±20V 2000 pF @ 100 V - - ISOPLUS i4-PAC™ - - -55°C ~ 150°C (TJ)
GT095N10K

GT095N10K

MOSFET N-CH 100V 55A TO-252

Goford Semiconductor

3,113 -
GT095N10K

数据表

SGT TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55A (Tc) 4.5V, 10V 10.5mOhm @ 35A, 10V Surface Mount 2.5V @ 250µA - - ±20V - - - TO-252 - 74W (Tc) -55°C ~ 150°C (TJ)
GPIHV5DK

GPIHV5DK

GaNFET N-CH 1200V 5A TO252

GaNPower

2,746 -
GPIHV5DK

数据表

- - Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 5A 6V - Surface Mount 1.7V @ 3.5mA 1.9 nC @ 6 V 1200 V +7.5V, -12V 90 pF @ 700 V - - - - - -55°C ~ 150°C (TJ)
GPIHV10DK

GPIHV10DK

GaNFET N-CH 1200V 10A TO252

GaNPower

2,391 -
GPIHV10DK

数据表

- - Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 10A 6V - Surface Mount 1.7V @ 3.5mA 3.5 nC @ 6 V 1200 V +7.5V, -12V 105 pF @ 700 V - - - - - -55°C ~ 150°C (TJ)
GPIHV7DK

GPIHV7DK

GaNFET N-CH 1200V 7A TO252

GaNPower

9,717 -
GPIHV7DK

数据表

- - Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 7A 6V - Surface Mount 1.7V @ 3.5mA 3.1 nC @ 6 V 1200 V +7.5V, -12V 90 pF @ 700 V - - - - - -55°C ~ 150°C (TJ)
ICE20N60FP

ICE20N60FP

Superjunction MOSFET

IceMOS Technology

7,413 -
ICE20N60FP

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 190mOhm @ 10A, 10V Through Hole 3.9V @ 250µA 59 nC @ 10 V 600 V ±20V 2064 pF @ 25 V - - TO-220FP - 35W (Tc) -55°C ~ 150°C (TJ)
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