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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AON7702

AON7702

MOSFET N-CH 30V 13.5A/36A 8DFN

Alpha & Omega Semiconductor Inc.

8,824 -
AON7702

数据表

SRFET™ 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 13.5A (Ta), 36A (Tc) 4.5V, 10V 10mOhm @ 13.5A, 10V Surface Mount 3V @ 250µA 48 nC @ 10 V 30 V ±20V 4250 pF @ 15 V - Schottky Diode (Body) 8-DFN-EP (3x3) - 3.1W (Ta), 23W (Tc) -55°C ~ 150°C (TJ)
DMN3112S-7

DMN3112S-7

MOSFET N-CH 30V 5.8A SOT23-3

Diodes Incorporated

3,711 -
DMN3112S-7

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.8A (Ta) 4.5V, 10V 57mOhm @ 5.8A, 10V Surface Mount 2.2V @ 250µA - 30 V ±20V 268 pF @ 5 V - - SOT-23-3 - 1.4W (Ta) -55°C ~ 150°C (TJ)
DMP2225L-7

DMP2225L-7

MOSFET P-CH 20V 2.6A SOT23-3

Diodes Incorporated

6,082 -
DMP2225L-7

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.6A (Ta) 2.5V, 4.5V 110mOhm @ 2.6A, 4.5V Surface Mount 1.25V @ 250µA 5.3 nC @ 4.5 V 20 V ±12V 250 pF @ 10 V - - SOT-23-3 - 1.08W (Ta) -55°C ~ 150°C (TJ)
DMTH46M7SFVW-13

DMTH46M7SFVW-13

MOSFET BVDSS: 31V~40V POWERDI333

Diodes Incorporated

8,560 -
DMTH46M7SFVW-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 16.3A (Ta), 67.2A (Tc) 10V 7.4mOhm @ 20A, 10V Surface Mount, Wettable Flank 4V @ 250µA 14.8 nC @ 10 V 40 V ±20V 1315 pF @ 20 V - - PowerDI3333-8 (SWP) Type UX - 3.2W (Ta), 54.5W (Tc) -55°C ~ 175°C (TJ)
S2N7002ET7G

S2N7002ET7G

DIODE

onsemi

7,386 -
S2N7002ET7G

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
BUK4D122-20PX

BUK4D122-20PX

BUK4D122-20PX

Nexperia USA Inc.

9,250 -
BUK4D122-20PX

数据表

- 6-UDFN Exposed Pad Bulk Obsolete - - - - - Surface Mount - - - - - - - DFN2020MD-6 - - -
BUK4D72-30X

BUK4D72-30X

BUK4D72-30X

Nexperia USA Inc.

6,092 -
BUK4D72-30X

数据表

- 6-UDFN Exposed Pad Bulk Obsolete - - - - - Surface Mount - - - - - - - DFN2020MD-6 - - -
BUK7510-55AL,127

BUK7510-55AL,127

BUK7510-55AL,127

Nexperia USA Inc.

8,710 -
BUK7510-55AL,127

数据表

- TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 10mOhm @ 25A, 10V Through Hole 4V @ 1mA 124 nC @ 10 V 55 V ±20V 6280 pF @ 25 V AEC-Q101 - TO-220AB Automotive 300W (Tc) -55°C ~ 175°C (TJ)
IRF7726TRPBFXTMA1

IRF7726TRPBFXTMA1

MOSFET P-CH 30V 7A MICRO8

Infineon Technologies

7,277 -
IRF7726TRPBFXTMA1

数据表

HEXFET® 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 7A (Ta) 4.5V, 10V 26mOhm @ 7A, 10V Surface Mount 2.5V @ 250µA 69 nC @ 10 V 30 V ±20V 2204 pF @ 25 V - - Micro8™ - 1.79W (Ta) -55°C ~ 150°C (TJ)
STP70NS04ZC

STP70NS04ZC

MOSFET N-CH 33V 80A TO220AB

STMicroelectronics

8,254 -
STP70NS04ZC

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 11mOhm @ 40A, 10V Through Hole 4V @ 1mA 58 nC @ 10 V 33 V ±20V 1930 pF @ 25 V - - TO-220 - 180W (Tc) -55°C ~ 175°C (TJ)
EKG1020

EKG1020

LOW RON MOSFET 100V/20A/0.033

Sanken Electric USA Inc.

9,442 -
EKG1020

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 20A (Ta) 4.5V, 10V 12.5mOhm @ 10A, 10V Through Hole 2.5V @ 1mA 45 nC @ 10 V 100 V ±20V 2200 pF @ 10 V - - TO-220-3 - 55W (Tc) 150°C (TJ)
FKV660S

FKV660S

MOSFET 60V/60A/0.011

Sanken Electric USA Inc.

4,446 -
FKV660S

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 60A (Ta) 10V 7.35mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA - 60 V ±20V 2500 pF @ 10 V - - TO-220S - 60W (Tc) 150°C
FKG1020

FKG1020

LOW RON MOSFET 100V/20A/0.033

Sanken Electric USA Inc.

7,905 -
FKG1020

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 20A (Ta) 4.5V, 10V 75mOhm @ 8.5A, 10V Through Hole 2.5V @ 1mA 45 nC @ 10 V 100 V ±20V 2200 pF @ 10 V - - TO-220F - 40W (Tc) 150°C (TJ)
MCT04N10-TP

MCT04N10-TP

Interface

Micro Commercial Co

8,187 -
MCT04N10-TP

数据表

- TO-261-4, TO-261AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 3.7A 10V 140mOhm @ 5A, 10V Surface Mount 2.5V @ 250µA 15.5 nC @ 10 V 100 V ±20V 690 pF @ 25 V - - SOT-223 - - -55°C ~ 150°C
SI2302A-TP-HF

SI2302A-TP-HF

Interface

Micro Commercial Co

7,222 -
SI2302A-TP-HF

数据表

- TO-236-3, SC-59, SOT-23-3 Bulk Active N-Channel MOSFET (Metal Oxide) 3A 2.5V, 4.5V 72mOhm @ 3.6A, 4.5V Surface Mount 1.2V @ 50µA 10 nC @ 4.5 V 20 V ±8V 237 pF @ 10 V - - SOT-23 - 1.25W -55°C ~ 150°C (TJ)
IPB024N08NF2SATMA1

IPB024N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-3

Infineon Technologies

604 -
IPB024N08NF2SATMA1

数据表

StrongIRFET™ 2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 107A (Tc) 6V, 10V 2.4mOhm @ 100A, 10V Surface Mount 3.8V @ 85µA 133 nC @ 10 V 80 V ±20V 6200 pF @ 40 V - - PG-TO263-3 - 150W (Tc) -55°C ~ 175°C (TJ)
R6530ENZ4C13

R6530ENZ4C13

650V 30A TO-247, LOW-NOISE POWER

Rohm Semiconductor

482 -
R6530ENZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 140mOhm @ 14.5A, 10V Through Hole 4V @ 960µA 90 nC @ 10 V 650 V ±20V 2100 pF @ 25 V - - TO-247G - 305W (Tc) 150°C (TJ)
R6530KNZ4C13

R6530KNZ4C13

650V 30A TO-247, HIGH-SPEED SWIT

Rohm Semiconductor

353 -
R6530KNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 140mOhm @ 14.5A, 10V Through Hole 5V @ 960µA 56 nC @ 10 V 650 V ±20V 2350 pF @ 25 V - - TO-247G - 305W (Tc) 150°C (TJ)
IPP65R155CFD7XKSA1

IPP65R155CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies

157 -
IPP65R155CFD7XKSA1

数据表

CoolMOS™ CFD7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 155mOhm @ 6.4A, 10V Through Hole 4.5V @ 320µA 28 nC @ 10 V 650 V ±20V 1283 pF @ 400 V - - PG-TO220-3 - 77W (Tc) -55°C ~ 150°C (TJ)
IRFS7534TRLPBF

IRFS7534TRLPBF

MOSFET N CH 60V 195A D2PAK

Infineon Technologies

2,332 -
IRFS7534TRLPBF

数据表

HEXFET®, StrongIRFET™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 195A (Tc) 6V, 10V 2.4mOhm @ 100A, 10V Surface Mount 3.7V @ 250µA 279 nC @ 10 V 60 V ±20V 10034 pF @ 25 V - - PG-TO263-7 - 294W (Tc) -55°C ~ 175°C (TJ)
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