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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BSC059N03ST

BSC059N03ST

MOSFET N-CH 30V 19A/89A TDSON

Infineon Technologies

7,802 -
BSC059N03ST

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 19A (Ta), 89A (Tc) 4.5V, 10V 5.5mOhm @ 50A, 10V Surface Mount 2V @ 35µA 21 nC @ 5 V 30 V ±20V 2670 pF @ 15 V - - PG-TDSON-8-1 - - -55°C ~ 150°C (TJ)
DI150N03PQ

DI150N03PQ

MOSFET POWERQFN 5X6 N 30V

Diotec Semiconductor

5,118 -
DI150N03PQ

数据表

- 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 150A (Tc) 4.5V, 10V 1.8mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 163 nC @ 10 V 30 V ±20V 7460 pF @ 15 V - - 8-QFN (5x6) - 80W (Tc) -55°C ~ 150°C (TJ)
DI080N03PQ

DI080N03PQ

MOSFET POWERQFN 5X6 N 30V

Diotec Semiconductor

8,184 -
DI080N03PQ

数据表

- 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 1.8mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 163 nC @ 10 V 30 V ±20V 7460 pF @ 15 V - - 8-QFN (5x6) - 35W (Tc) -55°C ~ 150°C (TJ)
DMT31M7LPS-13

DMT31M7LPS-13

MOSFET N-CH 30V 30A PWRDI5060

Diodes Incorporated

7,567 -
DMT31M7LPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Ta), 100A (Tc) 4.5V, 10V 1.7mOhm @ 20A, 10V Surface Mount 3V @ 250µA 90 nC @ 10 V 30 V ±20V 5741 pF @ 15 V - - PowerDI5060-8 - 1.3W (Ta), 113W (Tc) -55°C ~ 150°C (TJ)
FQU12N20TU

FQU12N20TU

MOSFET N-CH 200V 9A IPAK

onsemi

3,282 -
FQU12N20TU

数据表

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 280mOhm @ 4.5A, 10V Through Hole 5V @ 250µA 23 nC @ 10 V 200 V ±30V 910 pF @ 25 V - - IPAK - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ)
IPP093N06N3GHKSA1

IPP093N06N3GHKSA1

MOSFET N-CH 60V 50A TO220-3

Infineon Technologies

7,712 -
IPP093N06N3GHKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 9.3mOhm @ 50A, 10V Through Hole 4V @ 34µA 36 nC @ 10 V 60 V ±20V 2900 pF @ 30 V - - PG-TO220-3 - 71W (Tc) -55°C ~ 175°C (TJ)
STL19N3LLH6AG

STL19N3LLH6AG

DISCRETE

STMicroelectronics

2,714 -
STL19N3LLH6AG

数据表

STripFET™ F7 8-PowerVDFN Bulk Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 4.5V, 10V 33mOhm @ 5A, 10V Surface Mount 2.5V @ 250µA 3.7 nC @ 4.5 V 30 V ±20V 321 pF @ 25 V AEC-Q101 - PowerFlat™ (5x6) Automotive 50W (Tc) -55°C ~ 175°C (TJ)
PH9930L,115

PH9930L,115

MOSFET N-CH 30V 63A LFPAK56

NXP USA Inc.

4,432 -
PH9930L,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 63A (Tc) 4.5V, 10V 9.9mOhm @ 25A, 10V Surface Mount 2.15V @ 1mA 13.3 nC @ 4.5 V 30 V ±20V 1565 pF @ 12 V - - LFPAK56, Power-SO8 - 62.5W (Tc) -55°C ~ 150°C (TJ)
PH9030L,115

PH9030L,115

MOSFET N-CH 30V 63A LFPAK56

NXP USA Inc.

4,022 -
PH9030L,115

数据表

- SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 63A (Tc) 4.5V, 10V 9mOhm @ 25A, 10V Surface Mount 2V @ 1mA 13.3 nC @ 4.5 V 30 V ±20V 1565 pF @ 12 V - - LFPAK56, Power-SO8 - 62.5W (Tc) -55°C ~ 150°C (TJ)
FDU7N60NZTU

FDU7N60NZTU

MOSFET N-CH 600V 5.5A IPAK

onsemi

4,812 -
FDU7N60NZTU

数据表

UniFET-II™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 1.25Ohm @ 2.75A, 10V Through Hole 5V @ 250µA 17 nC @ 10 V 600 V ±25V 730 pF @ 25 V - - IPAK - 90W (Tc) -55°C ~ 150°C (TJ)
NVMFS5C423NLT1G

NVMFS5C423NLT1G

MOSFET N-CH 40V 126A 5DFN

onsemi

9,996 -
NVMFS5C423NLT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 150A (Tc) 4.5V, 10V 2mOhm @ 50A, 10V Surface Mount 2V @ 250µA 50 nC @ 10 V 40 V ±20V 3100 pF @ 20 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ)
IPP114N03L G

IPP114N03L G

MOSFET N-CH 30V 30A TO220-3

Infineon Technologies

9,542 -
IPP114N03L G

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 11.4mOhm @ 30A, 10V Through Hole 2.2V @ 250µA 14 nC @ 10 V 30 V ±20V 1500 pF @ 15 V - - PG-TO220-3 - 38W (Tc) -55°C ~ 175°C (TJ)
IPDD60R145CFD7XTMA1

IPDD60R145CFD7XTMA1

MOSFET N-CH 600V 24A HDSOP-10

Infineon Technologies

3,296 -
IPDD60R145CFD7XTMA1

数据表

CoolMOS™ CFD7 10-PowerSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Tc) - 145mOhm @ 6A, 10V Surface Mount 4.5V @ 300µA 28 nC @ 10 V 600 V ±20V 1199 pF @ 400 V - - PG-HDSOP-10-1 - 160W (Tc) -55°C ~ 150°C (TJ)
SIHF15N60E-GE3

SIHF15N60E-GE3

MOSFET N-CH 600V 15A TO220

Vishay Siliconix

779 -
SIHF15N60E-GE3

数据表

E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 280mOhm @ 8A, 10V Through Hole 4V @ 250µA 78 nC @ 10 V 600 V ±30V 1350 pF @ 100 V - - TO-220 Full Pack - 34W (Tc) -55°C ~ 150°C (TJ)
AOB66613L

AOB66613L

MOSFET N-CH 60V 44.5A/120A TO263

Alpha & Omega Semiconductor Inc.

2,494 -
AOB66613L

数据表

AlphaSGT™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 44.5A (Ta), 120A (Tc) 8V, 10V 2.5mOhm @ 20A, 10V Surface Mount 3.5V @ 250µA 110 nC @ 10 V 60 V ±20V 5300 pF @ 30 V - - TO-263 (D2PAK) - 8.3W (Ta), 260W (Tc) -55°C ~ 150°C (TJ)
R8002ANJGTL

R8002ANJGTL

NCH 800V 2A POWER MOSFET : R8002

Rohm Semiconductor

925 -
R8002ANJGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 4.3Ohm @ 1A, 10V Surface Mount 5V @ 1mA 13 nC @ 10 V 800 V ±30V 250 pF @ 25 V - - TO-263S - 62W (Tc) 150°C (TJ)
SIHB15N60E-GE3

SIHB15N60E-GE3

MOSFET N-CH 600V 15A D2PAK

Vishay Siliconix

1,347 -
SIHB15N60E-GE3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 280mOhm @ 8A, 10V Surface Mount 4V @ 250µA 78 nC @ 10 V 600 V ±30V 1350 pF @ 100 V - - TO-263 (D2PAK) - 180W (Tc) -55°C ~ 150°C (TJ)
STP33N60DM6

STP33N60DM6

MOSFET N-CH 600V 25A TO220

STMicroelectronics

976 -
STP33N60DM6

数据表

MDmesh™ M6 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 128mOhm @ 12.5A, 10V Through Hole 4.75V @ 250µA 35 nC @ 10 V 600 V ±25V 1500 pF @ 100 V - - TO-220 - 190W (Tc) -55°C ~ 150°C (TJ)
FDP027N08B-F102

FDP027N08B-F102

MOSFET N-CH 80V 120A TO220-3

onsemi

575 -
FDP027N08B-F102

数据表

PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 2.7mOhm @ 100A, 10V Through Hole 4.5V @ 250µA 178 nC @ 10 V 80 V ±20V 13530 pF @ 40 V - - TO-220-3 - 246W (Tc) -55°C ~ 175°C (TJ)
IPD50P04P413AUMA2

IPD50P04P413AUMA2

MOSFET

Infineon Technologies

2,415 -
IPD50P04P413AUMA2

数据表

OptiMOS™ P2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 12.6mOhm @ 50A, 10V Surface Mount 4V @ 85µA 51 nC @ 10 V 40 V ±20V 3670 pF @ 25 V - - PG-TO252-3-313 - 58W (Tc) -55°C ~ 175°C (TJ)
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