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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STH145N8F7-2AG

STH145N8F7-2AG

MOSFET N-CH 80V 90A H2PAK-2

STMicroelectronics

1,520 -
STH145N8F7-2AG

数据表

STripFET™ F7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 10V 4mOhm @ 45A, 10V Surface Mount 4.5V @ 250µA 96 nC @ 10 V 80 V ±20V 6340 pF @ 40 V AEC-Q101 - H2PAK-2 Automotive 200W (Tc) -55°C ~ 175°C (TJ)
STL320N4LF8

STL320N4LF8

AUTOMOTIVE-GRADE N-CHANNEL 40 V

STMicroelectronics

5,965 -
STL320N4LF8

数据表

- 8-PowerDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - - - Surface Mount - - 40 V - - - - PowerFlat™ (5x6) - - -
CSD16401Q5T

CSD16401Q5T

MOSFET N-CH 25V 100A 8VSON

Texas Instruments

520 -
CSD16401Q5T

数据表

NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Ta) 4.5V, 10V 1.6mOhm @ 40A, 10V Surface Mount 1.9V @ 250µA 29 nC @ 4.5 V 25 V +16V, -12V 4100 pF @ 12.5 V - - 8-VSON-CLIP (5x6) - 3.1W (Ta) -55°C ~ 150°C (TJ)
SIHG15N80AEF-GE3

SIHG15N80AEF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

438 -
SIHG15N80AEF-GE3

数据表

EF TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 350mOhm @ 6.5A, 10V Through Hole 4V @ 250µA 54 nC @ 10 V 800 V ±30V 1128 pF @ 100 V - - TO-247AC - 156W (Tc) -55°C ~ 150°C (TJ)
RCX450N20

RCX450N20

MOSFET N-CH 200V 45A TO220FM

Rohm Semiconductor

425 -
RCX450N20

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 45A (Tc) 10V 55mOhm @ 22.5A, 10V Through Hole 5V @ 1mA 80 nC @ 10 V 200 V ±30V 4200 pF @ 25 V - - TO-220FM - 2.23W (Ta), 40W (Tc) 150°C (TJ)
SI2305-TP-HF

SI2305-TP-HF

Interface

Micro Commercial Co

9,547 -
SI2305-TP-HF

数据表

- TO-236-3, SC-59, SOT-23-3 Bulk Active P-Channel MOSFET (Metal Oxide) 4.1A (Ta) 1.8V, 4.5V 90mOhm @ 2A, 1.8V Surface Mount 900mV @ 250µA 15 nC @ 4.5 V 8 V ±8V 740 pF @ 4 V - - SOT-23 - 1.4W (Ta) -55°C ~ 150°C (TJ)
IPW60R180P7XKSA1

IPW60R180P7XKSA1

MOSFET N-CH 650V 18A TO247-3

Infineon Technologies

178 -
IPW60R180P7XKSA1

数据表

CoolMOS™ P7 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 180mOhm @ 5.6A, 10V Through Hole 4V @ 280µA 25 nC @ 10 V 650 V ±20V 1081 pF @ 400 V - - PG-TO247-3 - 72W (Tc) -55°C ~ 150°C (TJ)
SI3407-TP-HF

SI3407-TP-HF

Interface

Micro Commercial Co

8,070 -
SI3407-TP-HF

数据表

- TO-236-3, SC-59, SOT-23-3 Bulk Active P-Channel MOSFET (Metal Oxide) 4.1A (Ta) 10V 87mOhm @ 2.9A, 4.5V Surface Mount 3V @ 250µA - 30 V ±20V 700 pF @ 15 V - - SOT-23 - 350mW -55°C ~ 150°C (TJ)
SI3420A-TP-HF

SI3420A-TP-HF

Interface

Micro Commercial Co

9,711 -
SI3420A-TP-HF

数据表

- TO-236-3, SC-59, SOT-23-3 Bulk Active N-Channel MOSFET (Metal Oxide) 6A 2.5V, 4.5V 28mOhm @ 5A, 4.5V Surface Mount 1V @ 250µA 12 nC @ 10 V 20 V ±10V 515 pF @ 10 V - - SOT-23 - 1.25W -55°C ~ 150°C (TJ)
AUIRF7675M2TR

AUIRF7675M2TR

MOSFET N-CH 150V 4.4A DIRECTFET

Infineon Technologies

9,508 -
AUIRF7675M2TR

数据表

HEXFET® DirectFET™ Isometric M2 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.4A (Ta), 18A (Tc) 10V 56mOhm @ 11A, 10V Surface Mount 5V @ 100µA 32 nC @ 10 V 150 V ±20V 1360 pF @ 25 V - - DirectFET™ Isometric M2 - 2.7W (Ta), 45W (Tc) -55°C ~ 175°C (TJ)
2N7002-TP-HF

2N7002-TP-HF

Interface

Micro Commercial Co

6,344 -
2N7002-TP-HF

数据表

- TO-236-3, SC-59, SOT-23-3 Bulk Active N-Channel MOSFET (Metal Oxide) 340mA (Ta) 4.5V, 10V 2.5Ohm @ 300mA, 10V Surface Mount 2.5V @ 250µA 1.7 nC @ 10 V 60 V ±20V 35 pF @ 25 V - - SOT-23 - 1.08W -55°C ~ 150°C (TJ)
BSS138A-TP-HF

BSS138A-TP-HF

Interface

Micro Commercial Co

8,587 -
BSS138A-TP-HF

数据表

- TO-236-3, SC-59, SOT-23-3 Bulk Active N-Channel MOSFET (Metal Oxide) 220mA 4.5V, 10V 3Ohm @ 500mA, 10V Surface Mount 1.45V @ 250µA - 50 V ±20V 22.8 pF @ 25 V - - SOT-23 - 350mW -55°C ~ 150°C (TJ)
AOB160A60L

AOB160A60L

MOSFET N-CH 600V 24A TO263

Alpha & Omega Semiconductor Inc.

717 -
AOB160A60L

数据表

aMOS5™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 160mOhm @ 12A, 10V Surface Mount 3.6V @ 250µA 46 nC @ 10 V 600 V ±20V 2340 pF @ 100 V - - TO-263 (D2PAK) - 250W (Tc) -55°C ~ 150°C (TJ)
AOUS66620

AOUS66620

N

Alpha & Omega Semiconductor Inc.

5,906 -
AOUS66620

数据表

AlphaSGT™ 3-PowerSMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 19.5A (Ta), 46A (Tc) 8V, 10V 9mOhm @ 20A, 10V Surface Mount 3.6V @ 250µA 25 nC @ 10 V 60 V ±20V 1070 pF @ 30 V - - UltraSO-8™ - 6.2W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
AOUS66920

AOUS66920

N

Alpha & Omega Semiconductor Inc.

9,767 -
AOUS66920

数据表

AlphaSGT™ 3-PowerSMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 19.5A (Ta), 69A (Tc) 4.5V, 10V 8.2mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 50 nC @ 10 V 100 V ±20V 2500 pF @ 50 V - - UltraSO-8™ - 6.2W (Ta), 86W (Tc) -55°C ~ 150°C (TJ)
IPP60R145CFD7XKSA1

IPP60R145CFD7XKSA1

MOSFET N CH

Infineon Technologies

479 -
IPP60R145CFD7XKSA1

数据表

CoolMOS™ CFD7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 145mOhm @ 6.8A, 10V Through Hole 4.5V @ 340µA 31 nC @ 10 V 600 V ±20V 1330 pF @ 400 V - - PG-TO220-3 - 83W (Tc) -55°C ~ 150°C (TJ)
CSD13202Q2T

CSD13202Q2T

PROTOTYPE

Texas Instruments

5,116 -
CSD13202Q2T

数据表

NexFET™ 6-WDFN Exposed Pad Bulk Active N-Channel MOSFET (Metal Oxide) 14.4A (Ta) 2.5V, 4.5V 9.3mOhm @ 5A, 4.5V Surface Mount 1.1V @ 250µA 6.6 nC @ 4.5 V 12 V ±8V 997 pF @ 6 V - - 6-WSON (2x2) - 2.7W (Ta) -55°C ~ 150°C (TJ)
BUK763R1-60E,118

BUK763R1-60E,118

MOSFET N-CH 60V 120A D2PAK

Nexperia USA Inc.

8,530 -
BUK763R1-60E,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.1mOhm @ 25A, 10V Surface Mount 4V @ 1mA 114 nC @ 10 V 60 V ±20V 8920 pF @ 25 V AEC-Q101 - D2PAK Automotive 293W (Tc) -55°C ~ 175°C (TJ)
CSD16342Q5AT

CSD16342Q5AT

PROTOTYPE

Texas Instruments

2,282 -
CSD16342Q5AT

数据表

NexFET™ 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 21A (Ta), 100A (Tc) 2.5V, 8V 4.7mOhm @ 20A, 8V Surface Mount 1.1V @ 250µA 7.1 nC @ 4.5 V 25 V +10V, -8V 1350 pF @ 12.5 V - - 8-VSON (5x6) - 3W (Ta) -55°C ~ 150°C (TJ)
CSD16323Q3T

CSD16323Q3T

PROTOTYPE

Texas Instruments

2,063 -
CSD16323Q3T

数据表

NexFET™ 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 20A (Ta), 105A (Tc) 3V, 8V 4.5mOhm @ 24A, 8V Surface Mount 1.4V @ 250µA 8.4 nC @ 4.5 V 25 V +10V, -8V 1300 pF @ 12.5 V - - 8-VSON-CLIP (3.3x3.3) - 2.8W (Ta), 74W (Tc) -55°C ~ 150°C (TJ)
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