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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQB7P20TM-F085PC

FQB7P20TM-F085PC

MOSFET

onsemi

7,219 -
FQB7P20TM-F085PC

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete P-Channel MOSFET (Metal Oxide) 7.3A (Tc) 10V 690mOhm @ 3.65A, 10V Surface Mount 5V @ 250µA 25 nC @ 10 V 200 V ±30V 770 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 90W (Tc) -55°C ~ 150°C (TJ)
TSM900N06CP

TSM900N06CP

60V, 11A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

7,773 -
TSM900N06CP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 4.5V, 10V 90mOhm @ 6A, 10V Surface Mount 2.5V @ 250µA 9.3 nC @ 10 V 60 V ±20V 500 pF @ 15 V - - TO-252 (DPAK) - 25W (Tc) 150°C (TJ)
FQB34P10TM-F085C

FQB34P10TM-F085C

MOSFET

onsemi

6,213 -
FQB34P10TM-F085C

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete P-Channel MOSFET (Metal Oxide) 33.5A (Tc) 10V 60mOhm @ 16.75A, 10V Surface Mount 4V @ 250µA 110 nC @ 10 V 100 V ±25V 2910 pF @ 25 V AEC-Q101 - TO-263 (D2PAK) Automotive 3.75W (Ta), 155W (Tc) -55°C ~ 175°C (TJ)
STP20NF06

STP20NF06

MOSFET N-CH 60V 20A TO220AB

STMicroelectronics

6,838 -
STP20NF06

数据表

STripFET™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 70mOhm @ 10A, 10V Through Hole 4V @ 250µA 18 nC @ 10 V 60 V ±20V 400 pF @ 25 V - - TO-220 - 60W (Tc) -55°C ~ 175°C (TJ)
AON6912ALS_101

AON6912ALS_101

MOSFET

Alpha & Omega Semiconductor Inc.

7,407 -
AON6912ALS_101

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
DMTH6009LPSWQ-13

DMTH6009LPSWQ-13

MOSFET BVDSS: 41V~60V POWERDI506

Diodes Incorporated

8,870 -
DMTH6009LPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11.76A (Ta), 89.5A (Tc) 4.5V, 10V 10mOhm @ 20A, 10V Surface Mount, Wettable Flank 2V @ 250µA 33.5 nC @ 10 V 60 V ±16V 1925 pF @ 30 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 2.8W (Ta), 136W (Tc) -55°C ~ 175°C (TJ)
FDR840P

FDR840P

MOSFET P-CH 20V 10A SUPERSOT8

onsemi

5,834 -
FDR840P

数据表

- 8-LSOP (0.130", 3.30mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 10A (Ta) 2.5V, 4.5V 12mOhm @ 10A, 4.5V Surface Mount 1.5V @ 250µA 60 nC @ 4.5 V 20 V ±12V 4481 pF @ 10 V - - SuperSOT™-8 - 1.8W (Ta) -55°C ~ 150°C (TJ)
IPF012N06NF2SATMA1

IPF012N06NF2SATMA1

TRENCH 40<-<100V

Infineon Technologies

245 -
IPF012N06NF2SATMA1

数据表

StrongIRFET™2 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 41A (Ta), 282A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V Surface Mount 3.3V @ 186µA 233 nC @ 10 V 60 V ±20V 10500 pF @ 30 V - - PG-TO263-7-U02 - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ)
STF16N65M5

STF16N65M5

MOSFET N-CH 650V 12A TO220FP

STMicroelectronics

1,610 -
STF16N65M5

数据表

MDmesh™ V TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 299mOhm @ 6A, 10V Through Hole 5V @ 250µA 45 nC @ 10 V 650 V ±25V 1250 pF @ 100 V - - TO-220FP - 25W (Tc) 150°C (TJ)
SI7192DP-T1-GE3

SI7192DP-T1-GE3

MOSFET N-CH 30V 60A PPAK SO-8

Vishay Siliconix

2,895 -
SI7192DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 1.9mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 135 nC @ 10 V 30 V ±20V 5800 pF @ 15 V - - PowerPAK® SO-8 - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
PSMN4R4-80BS,118

PSMN4R4-80BS,118

MOSFET N-CH 80V 100A D2PAK

Nexperia USA Inc.

6,485 -
PSMN4R4-80BS,118

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 4.5mOhm @ 25A, 10V Surface Mount 4V @ 1mA 125 nC @ 10 V 80 V ±20V 8400 pF @ 40 V - - D2PAK - 306W (Tc) -55°C ~ 175°C (TJ)
FDBL86566-F085

FDBL86566-F085

MOSFET N-CH 60V 240A 8HPSOF

onsemi

5,883 -
FDBL86566-F085

数据表

PowerTrench® 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 240A (Tc) 10V 2.4mOhm @ 80A, 10V Surface Mount 4V @ 250µA 110 nC @ 10 V 60 V ±20V 6655 pF @ 30 V AEC-Q101 - 8-HPSOF Automotive 300W (Tj) -55°C ~ 175°C (TJ)
R6030ENXC7G

R6030ENXC7G

600V 30A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

846 -
R6030ENXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 130mOhm @ 14.5A, 10V Through Hole 4V @ 1mA 85 nC @ 10 V 600 V ±20V 2100 pF @ 25 V - - TO-220FM - 86W (Tc) 150°C (TJ)
IPL65R160CFD7AUMA1

IPL65R160CFD7AUMA1

COOLMOS CFD7 SUPERJUNCTION MOSFE

Infineon Technologies

2,650 -
IPL65R160CFD7AUMA1

数据表

CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 160mOhm @ 6.4A, 10V Surface Mount 4.5V @ 320µA 28 nC @ 10 V 650 V ±20V 1283 pF @ 400 V - - PG-VSON-4 - 98W (Tc) -55°C ~ 150°C (TJ)
IXTP170N075T2

IXTP170N075T2

MOSFET N-CH 75V 170A TO220AB

Littelfuse Inc.

326 -
IXTP170N075T2

数据表

TrenchT2™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 170A (Tc) 10V 5.4mOhm @ 50A, 10V Through Hole 4V @ 250µA 109 nC @ 10 V 75 V ±20V 6860 pF @ 25 V - - TO-220-3 - 360W (Tc) -55°C ~ 175°C (TJ)
R8005ANJFRGTL

R8005ANJFRGTL

MOSFET N-CH 800V 5A LPTS

Rohm Semiconductor

1,848 -
R8005ANJFRGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 2.1Ohm @ 2.5A, 10V Surface Mount 5V @ 1mA 20 nC @ 10 V 800 V ±30V 500 pF @ 25 V AEC-Q101 - LPTS Automotive 120W (Tc) 150°C (TJ)
AOTF190A60L

AOTF190A60L

MOSFET N-CH 600V 20A TO220F

Alpha & Omega Semiconductor Inc.

496 -
AOTF190A60L

数据表

aMOS5™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 190mOhm @ 7.6A, 10V Through Hole 4.6V @ 250µA 34 nC @ 10 V 600 V ±20V 1935 pF @ 100 V - - TO-220F - 32W (Tc) -55°C ~ 150°C (TJ)
SIHG17N80AEF-GE3

SIHG17N80AEF-GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix

294 -
SIHG17N80AEF-GE3

数据表

EF TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 305mOhm @ 8.5A, 10V Through Hole 4V @ 250µA 63 nC @ 10 V 800 V ±30V 1300 pF @ 100 V - - TO-247AC - 179W (Tc) -55°C ~ 150°C (TJ)
NTP6410ANG

NTP6410ANG

MOSFET N-CH 100V 76A TO220AB

onsemi

137 -
NTP6410ANG

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 76A (Tc) 10V 13mOhm @ 76A, 10V Through Hole 4V @ 250µA 120 nC @ 10 V 100 V ±20V 4500 pF @ 25 V - - TO-220 - 188W (Tc) -55°C ~ 175°C (TJ)
IPBE65R190CFD7AATMA1

IPBE65R190CFD7AATMA1

MOSFET N-CH 650V 14A TO263-7

Infineon Technologies

5,785 -
IPBE65R190CFD7AATMA1

数据表

CoolMOS™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14A (Tc) - 190mOhm @ 6.4A, 10V Surface Mount 4.5V @ 320µA 7 nC @ 10 V 650 V ±20V 1291 pF @ 400 V AEC-Q101 - PG-TO263-7-11 Automotive 77W (Tc) -40°C ~ 150°C (TJ)
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