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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RSJ301N10TL

RSJ301N10TL

NCH 100V 30A POWER MOSFET : RSJ3

Rohm Semiconductor

466 -
RSJ301N10TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Ta) 4V, 10V 46mOhm @ 15A, 10V Surface Mount 2.5V @ 1mA 60 nC @ 10 V 100 V ±20V 2100 pF @ 25 V - - TO-263S - 50W (Ta) 150°C (TJ)
MCQ15N10B-TP

MCQ15N10B-TP

MOSFET N-CHANNEL MOSFET

Micro Commercial Co

8,367 -
MCQ15N10B-TP

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 15A (Tj) 4.5V, 10V 9.5mOhm @ 12A, 10V Surface Mount 2.5V @ 250µA 60.7 nC @ 10 V 100 V ±20V 3530 pF @ 50 V - - 8-SOP - 4W (Tj) -55°C ~ 150°C (TJ)
R6004PND3FRATL

R6004PND3FRATL

MOSFET N-CH 600V 4A TO252

Rohm Semiconductor

4,512 -
R6004PND3FRATL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 1.8Ohm @ 2A, 10V Surface Mount 4.5V @ 1mA 11 nC @ 10 V 600 V ±25V 280 pF @ 25 V AEC-Q101 - TO-252 Automotive 65W (Tc) 150°C (TJ)
STB85NF55T4

STB85NF55T4

MOSFET N-CH 55V 80A D2PAK

STMicroelectronics

487 -
STB85NF55T4

数据表

STripFET™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 8mOhm @ 40A, 10V Surface Mount 4V @ 250µA 150 nC @ 10 V 55 V ±20V 3700 pF @ 25 V - - D2PAK - 300W (Tc) -55°C ~ 175°C (TJ)
SIL04P06-TP

SIL04P06-TP

MOSFET P-CHANNEL MOSFET

Micro Commercial Co

7,355 -
SIL04P06-TP

数据表

- SOT-23-6 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 3.5A 4.5V, 10V 80mOhm @ 3.1A, 10V Surface Mount 3V @ 250µA 12 nC @ 4.5 V 60 V ±20V 650 pF @ 15 V - - SOT-23-6L - 2W -55°C ~ 150°C (TJ)
GPIXV30DFN

GPIXV30DFN

GANFET N-CH 1200V 30A DFN8X8

GaNPower

9,676 -
GPIXV30DFN

数据表

- Die Bag Active N-Channel GaNFET (Gallium Nitride) 30A 6V - Surface Mount 1.4V @ 3.5mA 8.25 nC @ 6 V 1200 V +7.5V, -12V 236 pF @ 400 V - - Die - - -55°C ~ 150°C (TJ)
NTMFS006N12MCT1G

NTMFS006N12MCT1G

POWER MOSFET, 120V SINGLE N CHAN

onsemi

19,500 -
NTMFS006N12MCT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Ta), 93A (Tc) 6V, 10V 6mOhm @ 46A, 10V Surface Mount 4V @ 260µA 42 nC @ 10 V 120 V ±20V 3365 pF @ 60 V - - 5-DFN (5x6) (8-SOFL) - 2.7W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
SSM3K121TU

SSM3K121TU

MOSFET N-CH 20V 3.5A SC70

Toshiba Semiconductor and Storage

8,316 -
SSM3K121TU

数据表

- 3-SMD, Flat Leads Bulk Active N-Channel MOSFET (Metal Oxide) 3.2A (Ta) 1.5V, 4V 48mOhm @ 2A, 4V Surface Mount 1V @ 1mA 5.9 nC @ 4 V 20 V ±10V 400 pF @ 10 V - - UFM - 500mW (Ta) 150°C
IPB180N04S4H0ATMA1

IPB180N04S4H0ATMA1

MOSFET N-CH 40V 180A TO263-7-3

Infineon Technologies

1,573 -
IPB180N04S4H0ATMA1

数据表

OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 1.1mOhm @ 100A, 10V Surface Mount 4V @ 180µA 225 nC @ 10 V 40 V ±20V 17940 pF @ 25 V - - PG-TO263-7-3 - 250W (Tc) -55°C ~ 175°C (TJ)
IAUT300N08S5N012ATMA1

IAUT300N08S5N012ATMA1

MOSFET_(75V 120V(

Infineon Technologies

2,550 -
IAUT300N08S5N012ATMA1

数据表

OptiMOS™ 5 8-PowerSFN Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 300A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V Surface Mount 3.8V @ 275µA 231 nC @ 10 V 80 V ±20V 16250 pF @ 40 V - - PG-HSOF-8-1 Automotive 375W (Tc) -55°C ~ 175°C (TJ)
IGLR60R260D1E8238XUMA1

IGLR60R260D1E8238XUMA1

GAN HV

Infineon Technologies

9,802 -
IGLR60R260D1E8238XUMA1

数据表

CoolGaN™ 8-PowerTDFN Tape & Reel (TR) Discontinued at Digi-Key N-Channel GaNFET (Gallium Nitride) 10.4A (Tc) - - Surface Mount 1.6V @ 690µA - 600 V -10V 110 pF @ 400 V - - PG-TSON-8-7 - 52W (Tc) -40°C ~ 150°C (TJ)
IGLR60R190D1E8238XUMA1

IGLR60R190D1E8238XUMA1

GAN HV

Infineon Technologies

7,361 -
IGLR60R190D1E8238XUMA1

数据表

CoolGaN™ 8-PowerTDFN Tape & Reel (TR) Discontinued at Digi-Key N-Channel GaNFET (Gallium Nitride) 12.8A (Tc) - - Surface Mount 1.6V @ 960µA - 600 V -10V 157 pF @ 400 V - - PG-TSON-8-6 - 55.5W (Tc) -40°C ~ 150°C (TJ)
IGOT60R070D1E8237AUMA1

IGOT60R070D1E8237AUMA1

GAN HV

Infineon Technologies

5,399 -
IGOT60R070D1E8237AUMA1

数据表

CoolGaN™ 20-PowerSOIC (0.433", 11.00mm Width) Tape & Reel (TR) Discontinued at Digi-Key N-Channel GaNFET (Gallium Nitride) 31A (Tc) - - Surface Mount 1.6V @ 2.6mA - 600 V -10V 380 pF @ 400 V - - PG-DSO-20-87 - 125W (Tc) -55°C ~ 150°C (TJ)
TJ20A10M3(STA4,Q

TJ20A10M3(STA4,Q

TJ20A10M3(STA4,Q

Toshiba Semiconductor and Storage

2,915 -
TJ20A10M3(STA4,Q

数据表

U-MOSVI TO-220-3 Full Pack Tube Active P-Channel MOSFET (Metal Oxide) 20A (Ta) 10V 90mOhm @ 10A, 10V Through Hole 4V @ 1mA 120 nC @ 10 V 100 V ±20V 5500 pF @ 10 V - - TO-220SIS - 35W (Tc) 150°C
IRFS11N50ATRLP

IRFS11N50ATRLP

MOSFET N-CH 500V 11A TO263AB

Vishay Siliconix

325 -
IRFS11N50ATRLP

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 520mOhm @ 6.6A, 10V Surface Mount 4V @ 250µA 52 nC @ 10 V 500 V ±30V 1423 pF @ 25 V - - TO-263AB - 170W (Tc) -55°C ~ 150°C (TJ)
DMN3732UFB4-7

DMN3732UFB4-7

MOSFET BVDSS: 25V~30V X2-DFN1006

Diodes Incorporated

4,376 -
DMN3732UFB4-7

数据表

- 3-XFDFN Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 1.3A (Ta) 1.8V, 4.5V 460mOhm @ 200mA, 4.5V Surface Mount 950mV @ 250µA 0.9 nC @ 4.5 V 30 V ±8V 40.8 pF @ 25 V - - X2-DFN1006-3 - 490mW (Ta) -55°C ~ 150°C (TJ)
DMTH46M7SFVWQ-13

DMTH46M7SFVWQ-13

MOSFET BVDSS: 31V~40V POWERDI333

Diodes Incorporated

3,138 -
DMTH46M7SFVWQ-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 16.3A (Ta), 67.2A (Tc) 10V 7.4mOhm @ 20A, 10V Surface Mount, Wettable Flank 4V @ 250µA 14.8 nC @ 10 V 40 V ±20V 1315 pF @ 20 V AEC-Q101 - PowerDI3333-8 (SWP) Type UX Automotive 3.2W (Ta), 54.5W (Tc) -55°C ~ 175°C (TJ)
STD7N52DK3

STD7N52DK3

MOSFET N-CH 525V 6A DPAK

STMicroelectronics

2,315 -
STD7N52DK3

数据表

SuperFREDmesh3™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 1.15Ohm @ 3A, 10V Surface Mount 4.5V @ 50µA 33 nC @ 10 V 525 V ±30V 870 pF @ 50 V - - DPAK - 90W (Tc) 150°C (TJ)
RS1P600BHTB1

RS1P600BHTB1

NCH 100V 60A, HSOP8, POWER MOSFE

Rohm Semiconductor

2,425 -
RS1P600BHTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Ta), 60A (Tc) 6V, 10V 8.8mOhm @ 18A, 10V Surface Mount 4V @ 1mA 64 nC @ 10 V 100 V ±20V 4080 pF @ 50 V - - 8-HSOP - 3W (Ta), 35W (Tc) 150°C (TJ)
AOTF409

AOTF409

MOSFET P-CH 60V 5.4A/24A TO220FL

Alpha & Omega Semiconductor Inc.

8,516 -
AOTF409

数据表

- TO-220-3 Full Pack Tube Active P-Channel MOSFET (Metal Oxide) 5.4A (Ta), 24A (Tc) 4.5V, 10V 40mOhm @ 20A, 10V Through Hole 2.4V @ 250µA 52 nC @ 10 V 60 V ±20V 2953 pF @ 30 V - - TO-220FL - 2.16W (Ta), 43W (Tc) -55°C ~ 175°C (TJ)
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