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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRF3709S

IRF3709S

MOSFET N-CH 30V 90A D2PAK

Infineon Technologies

8,340 -
IRF3709S

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V Surface Mount 3V @ 250µA 41 nC @ 5 V 30 V ±20V 2672 pF @ 16 V - - D2PAK - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ)
AON6162

AON6162

MOSFET N-CHANNEL 60V 100A 8DFN

Alpha & Omega Semiconductor Inc.

8,224 -
AON6162

数据表

AlphaSGT™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 6V, 10V 2.1mOhm @ 20A, 10V Surface Mount 3.2V @ 250µA 100 nC @ 10 V 60 V ±20V 4850 pF @ 30 V - - 8-DFN (5x6) - 215W (Tc) -55°C ~ 150°C (TJ)
IRL2203NSTRRPBF

IRL2203NSTRRPBF

MOSFET N-CH 30V 116A D2PAK

Infineon Technologies

6,098 -
IRL2203NSTRRPBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 116A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V Surface Mount 3V @ 250µA 60 nC @ 4.5 V 30 V ±16V 3290 pF @ 25 V - - D2PAK - 3.8W (Ta), 180W (Tc) -55°C ~ 175°C (TJ)
5LP01SP

5LP01SP

MOSFET P-CH 50V 70MA 3SPA

onsemi

6,157 -
5LP01SP

数据表

- SC-72 Bag Obsolete P-Channel MOSFET (Metal Oxide) 70mA (Ta) 1.5V, 4V 23Ohm @ 40mA, 4V Through Hole - 1.4 nC @ 10 V 50 V ±10V 7.4 pF @ 10 V - - 3-SPA - 250mW (Ta) 150°C (TJ)
PMN25EN,115

PMN25EN,115

MOSFET N-CH 30V 6.2A 6TSOP

NXP USA Inc.

7,540 -
PMN25EN,115

数据表

- SC-74, SOT-457 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6.2A (Ta) 4.5V, 10V 23mOhm @ 6.2A, 10V Surface Mount 2.5V @ 250µA 11 nC @ 10 V 30 V ±20V 492 pF @ 15 V - - SC-74 - 540mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ)
5LP01SP-AC

5LP01SP-AC

MOSFET P-CH 50V 70MA 3SPA

onsemi

9,229 -
5LP01SP-AC

数据表

- SC-72 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 70mA (Ta) 1.5V, 4V 23Ohm @ 40mA, 4V Through Hole - 1.4 nC @ 10 V 50 V ±10V 7.4 pF @ 10 V - - 3-SPA - 250mW (Ta) 150°C (TJ)
DMN2400UFDQ-13

DMN2400UFDQ-13

MOSFET N-CH 20V 900MA 3DFN

Diodes Incorporated

10,000 -
DMN2400UFDQ-13

数据表

- 3-PowerUDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 900mA (Ta) 1.5V, 4.5V 600mOhm @ 200mA, 4.5V Surface Mount 1V @ 250µA 0.5 nC @ 4.5 V 20 V ±12V 37 pF @ 16 V - - U-DFN1212-3 (Type C) - 400mW (Ta) -55°C ~ 150°C (TJ)
MFA138K-EVL-CT

MFA138K-EVL-CT

MOSFET Single,SOT-23,50V,500mA,N

Venkel

5,000 -
MFA138K-EVL-CT

数据表

MST - Strip Active N-Channel MOSFET (Metal Oxide) 500mA (Ta) 2.5V, 10V 1.6Ohm @ 500mA, 10V Surface Mount - 1 nC @ 4.5 V 50 V ±20V 50 pF @ 25 V - - TO-236-3, SC-59, SOT-23-3 - 500mW (Ta) -55°C ~ 150°C (TJ)
5HP01M-TL-E

5HP01M-TL-E

MOSFET P-CH 50V 70MA 3MCP

onsemi

5,527 -
5HP01M-TL-E

数据表

- SC-70, SOT-323 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 70mA (Ta) 4V, 10V 22Ohm @ 40mA, 10V Surface Mount - 1.32 nC @ 10 V 50 V ±20V 6.2 pF @ 10 V - - MCP - 150mW (Ta) 150°C (TJ)
SCH1402-S-TL-E-SY

SCH1402-S-TL-E-SY

MOSFET N-CH

Sanyo

585,000 -
SCH1402-S-TL-E-SY

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
MCH3306-TL-E

MCH3306-TL-E

PCH 1.8V DRIVE SERIES

onsemi

465,000 -
MCH3306-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
SCH1402-S-TL-E

SCH1402-S-TL-E

MOSFET N-CH

onsemi

310,000 -
SCH1402-S-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
5HP01M-TL-H

5HP01M-TL-H

MOSFET P-CH 50V 70MA 3MCP

onsemi

5,946 -
5HP01M-TL-H

数据表

- SC-70, SOT-323 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 70mA (Ta) 4V, 10V 22Ohm @ 40mA, 10V Surface Mount - 1.32 nC @ 10 V 50 V ±20V 6.2 pF @ 10 V - - MCP - 150mW (Ta) 150°C (TJ)
IRFR3910CPBF

IRFR3910CPBF

MOSFET N-CH 100V 16A DPAK

Infineon Technologies

3,819 -
IRFR3910CPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 115mOhm @ 10A, 10V Surface Mount 4V @ 250µA 44 nC @ 10 V 100 V ±20V 640 pF @ 25 V - - TO-252AA (DPAK) - 79W (Tc) -55°C ~ 175°C (TJ)
IRLZ14L

IRLZ14L

MOSFET N-CH 60V 10A TO262-3

Vishay Siliconix

6,801 -
IRLZ14L

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 4V, 5V 200mOhm @ 6A, 5V Through Hole 2V @ 250µA 8.4 nC @ 5 V 60 V ±10V 400 pF @ 25 V - - TO-262-3 - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ)
STP4NB100

STP4NB100

MOSFET N-CH 1000V 3.8A TO220AB

STMicroelectronics

4,548 -
STP4NB100

数据表

PowerMESH™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.8A (Tc) 10V 4.4Ohm @ 2A, 10V Through Hole 5V @ 250µA 45 nC @ 10 V 1000 V ±30V 1400 pF @ 25 V - - TO-220 - 125W (Tc) 150°C (TJ)
IRF6665TR1

IRF6665TR1

MOSFET N-CH 100V 4.2A DIRECTFET

Infineon Technologies

8,337 -
IRF6665TR1

数据表

- DirectFET™ Isometric SH Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.2A (Ta), 19A (Tc) 10V 62mOhm @ 5A, 10V Surface Mount 5V @ 250µA 13 nC @ 10 V 100 V ±20V 530 pF @ 25 V - - DIRECTFET™ SH - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
SIHB6N80E-GE3

SIHB6N80E-GE3

MOSFET N-CH 800V 5.4A D2PAK

Vishay Siliconix

2,041 -
SIHB6N80E-GE3

数据表

E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 5.4A (Tc) 10V 940mOhm @ 3A, 10V Surface Mount 4V @ 250µA 44 nC @ 10 V 800 V ±30V 827 pF @ 100 V - - TO-263 (D2PAK) - 78W (Tc) -55°C ~ 150°C (TJ)
IPB80P03P4L07ATMA1

IPB80P03P4L07ATMA1

MOSFET P-CH 30V 80A TO263-3

Infineon Technologies

7,196 -
IPB80P03P4L07ATMA1

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 6.9mOhm @ 80A, 10V Surface Mount 2V @ 130µA 80 nC @ 10 V 30 V +5V, -16V 5700 pF @ 25 V - - PG-TO263-3-2 - 88W (Tc) -55°C ~ 175°C (TJ)
IRFD210

IRFD210

MOSFET N-CH 200V 600MA 4DIP

Vishay Siliconix

3,859 -
IRFD210

数据表

- 4-DIP (0.300", 7.62mm) Tube Obsolete N-Channel MOSFET (Metal Oxide) 600mA (Ta) 10V 1.5Ohm @ 360mA, 10V Through Hole 4V @ 250µA 8.2 nC @ 10 V 200 V ±20V 140 pF @ 25 V - - 4-HVMDIP - 1W (Ta) -55°C ~ 150°C (TJ)
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