富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
MCH3476-TL-W

MCH3476-TL-W

MOSFET N-CH 20V 2A SC70FL/MCPH3

onsemi

6,871 -
MCH3476-TL-W

数据表

- 3-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2A (Ta) 1.8V, 4.5V 125mOhm @ 1A, 4.5V Surface Mount 1.3V @ 1mA 1.8 nC @ 4.5 V 20 V ±12V 128 pF @ 10 V - - SC-70FL/MCPH3 - 800mW (Ta) 150°C (TJ)
SCH2830-TL-E

SCH2830-TL-E

MOSFET P-CH 20V 1A 6SCH

onsemi

70,000 -
SCH2830-TL-E

数据表

- 6-SMD, Flat Leads Bulk Obsolete P-Channel MOSFET (Metal Oxide) 1A (Ta) - 500mOhm @ 500mA, 4V Surface Mount - 1.5 nC @ 4 V 20 V - 115 pF @ 10 V - Schottky Diode (Isolated) 6-SCH - 600mW (Ta) 150°C (TJ)
NTD4815NH-1G

NTD4815NH-1G

MOSFET N-CH 30V 6.9A/35A IPAK

onsemi

3,209 -
NTD4815NH-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 6.9A (Ta), 35A (Tc) 4.5V, 11.5V 15mOhm @ 30A, 10V Through Hole 2.5V @ 250µA 6.8 nC @ 4.5 V 30 V ±20V 845 pF @ 12 V - - IPAK - 1.26W (Ta), 32.6W (Tc) -55°C ~ 175°C (TJ)
IRFD010

IRFD010

MOSFET N-CH 50V 1.7A 4DIP

Vishay Siliconix

3,649 -
IRFD010

数据表

- 4-DIP (0.300", 7.62mm) Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.7A (Tc) 10V 200mOhm @ 860mA, 10V Through Hole 4V @ 250µA 13 nC @ 10 V 50 V ±20V 250 pF @ 25 V - - 4-HVMDIP - 1W (Tc) -55°C ~ 150°C (TJ)
IRFD014

IRFD014

MOSFET N-CH 60V 1.7A 4DIP

Vishay Siliconix

9,386 -
IRFD014

数据表

- 4-DIP (0.300", 7.62mm) Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.7A (Ta) 10V 200mOhm @ 1A, 10V Through Hole 4V @ 250µA 11 nC @ 10 V 60 V ±20V 310 pF @ 25 V - - 4-HVMDIP - 1.3W (Ta) -55°C ~ 175°C (TJ)
IRFD9014

IRFD9014

MOSFET P-CH 60V 1.1A 4DIP

Vishay Siliconix

9,981 -
IRFD9014

数据表

- 4-DIP (0.300", 7.62mm) Tube Obsolete P-Channel MOSFET (Metal Oxide) 1.1A (Ta) 10V 500mOhm @ 660mA, 10V Through Hole 4V @ 250µA 12 nC @ 10 V 60 V ±20V 270 pF @ 25 V - - 4-HVMDIP - 1.3W (Ta) -55°C ~ 175°C (TJ)
IRFR110TR

IRFR110TR

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix

3,750 -
IRFR110TR

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.3A (Tc) 10V 540mOhm @ 2.6A, 10V Surface Mount 4V @ 250µA 8.3 nC @ 10 V 100 V ±20V 180 pF @ 25 V - - DPAK - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
IRFR210

IRFR210

MOSFET N-CH 200V 2.6A DPAK

Vishay Siliconix

2,808 -
IRFR210

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.6A (Tc) 10V 1.5Ohm @ 1.6A, 10V Surface Mount 4V @ 250µA 8.2 nC @ 10 V 200 V ±20V 140 pF @ 25 V - - DPAK - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
IRFU014

IRFU014

MOSFET N-CH 60V 7.7A TO251AA

Vishay Siliconix

8,791 -
IRFU014

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 7.7A (Tc) 10V 200mOhm @ 4.6A, 10V Through Hole 4V @ 250µA 11 nC @ 10 V 60 V ±20V 300 pF @ 25 V - - TO-251AA - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
IRFU210

IRFU210

MOSFET N-CH 200V 2.6A TO251AA

Vishay Siliconix

9,531 -
IRFU210

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.6A (Tc) 10V 1.5Ohm @ 1.6A, 10V Through Hole 4V @ 250µA 8.2 nC @ 10 V 200 V ±20V 140 pF @ 25 V - - TO-251AA - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
IRFU110

IRFU110

MOSFET N-CH 100V 4.3A TO251AA

Vishay Siliconix

3,284 -
IRFU110

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.3A (Tc) 10V 540mOhm @ 900mA, 10V Through Hole 4V @ 250µA 8.3 nC @ 10 V 100 V ±20V 180 pF @ 25 V - - TO-251AA - 25W (Tc) -55°C ~ 150°C (TJ)
IRFU214

IRFU214

MOSFET N-CH 250V 2.2A TO251AA

Vishay Siliconix

9,828 -
IRFU214

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.2A (Tc) 10V 2Ohm @ 1.3A, 10V Through Hole 4V @ 250µA 8.2 nC @ 10 V 250 V ±20V 140 pF @ 25 V - - TO-251AA - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
IRFR110TRL

IRFR110TRL

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix

5,286 -
IRFR110TRL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.3A (Tc) 10V 540mOhm @ 2.6A, 10V Surface Mount 4V @ 250µA 8.3 nC @ 10 V 100 V ±20V 180 pF @ 25 V - - DPAK - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
IRFR110TRR

IRFR110TRR

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix

2,948 -
IRFR110TRR

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.3A (Tc) 10V 540mOhm @ 2.6A, 10V Surface Mount 4V @ 250µA 8.3 nC @ 10 V 100 V ±20V 180 pF @ 25 V - - DPAK - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
IRFR210TRR

IRFR210TRR

MOSFET N-CH 200V 2.6A DPAK

Vishay Siliconix

4,881 -
IRFR210TRR

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.6A (Tc) 10V 1.5Ohm @ 1.6A, 10V Surface Mount 4V @ 250µA 8.2 nC @ 10 V 200 V ±20V 140 pF @ 25 V - - DPAK - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
SIE822DF-T1-E3

SIE822DF-T1-E3

MOSFET N-CH 20V 50A 10POLARPAK

Vishay Siliconix

5,563 -
SIE822DF-T1-E3

数据表

TrenchFET® 10-PolarPAK® (S) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 3.4mOhm @ 18.3A, 10V Surface Mount 3V @ 250µA 78 nC @ 10 V 20 V ±20V 4200 pF @ 10 V - - 10-PolarPAK® (S) - 5.2W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
SI4890DY-T1-GE3

SI4890DY-T1-GE3

MOSFET N-CH 30V 11A 8-SOIC

Vishay Siliconix

3,174 -
SI4890DY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta) 4.5V, 10V 12mOhm @ 11A, 10V Surface Mount 800mV @ 250µA (Min) 20 nC @ 5 V 30 V ±25V - - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
SI7455DP-T1-GE3

SI7455DP-T1-GE3

MOSFET P-CH 80V 28A PPAK SO-8

Vishay Siliconix

5,180 -
SI7455DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 28A (Tc) 6V, 10V 25mOhm @ 10.5A, 10V Surface Mount 4V @ 250µA 155 nC @ 10 V 80 V ±20V 5160 pF @ 40 V - - PowerPAK® SO-8 - 5.2W (Ta), 83.3W (Tc) -55°C ~ 150°C (TJ)
SUD50P08-26-E3

SUD50P08-26-E3

MOSFET P-CH 80V 50A TO252

Vishay Siliconix

6,378 -
SUD50P08-26-E3

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 26mOhm @ 12.9A, 10V Surface Mount 4V @ 250µA 155 nC @ 10 V 80 V ±20V 5160 pF @ 40 V - - TO-252AA - 8.3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ)
TSM500N15CS

TSM500N15CS

150V, 11A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

6,353 -
TSM500N15CS

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Ta), 11A (Tc) 10V 50mOhm @ 4A, 10V Surface Mount 4V @ 250µA 20.5 nC @ 10 V 150 V ±20V 1123 pF @ 80 V - - 8-SOP - 12.7W (Ta) -55°C ~ 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户