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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PMG370XN,115

PMG370XN,115

MOSFET N-CH 30V 960MA 6TSSOP

NXP USA Inc.

4,583 -
PMG370XN,115

数据表

TrenchMOS™ 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 960mA (Ta) 2.5V, 4.5V 440mOhm @ 200mA, 4.5V Surface Mount 1.5V @ 250µA 0.65 nC @ 4.5 V 30 V ±12V 37 pF @ 25 V - - 6-TSSOP - 690mW (Tc) -55°C ~ 150°C (TJ)
PMPB16XN,115

PMPB16XN,115

MOSFET N-CH 30V 7.2A 6DFN

NXP USA Inc.

5,336 -
PMPB16XN,115

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.2A (Ta) 2.5V, 4.5V 21mOhm @ 7.2A, 4.5V Surface Mount 1.5V @ 250µA 10.8 nC @ 4.5 V 30 V ±12V 775 pF @ 15 V - - 6-DFN2020MD (2x2) - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ)
NTZS3151PT1H

NTZS3151PT1H

MOSFET P-CH 20V 860MA SOT563-6

onsemi

2,930 -
NTZS3151PT1H

数据表

- SOT-563, SOT-666 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 860mA (Ta) 1.8V, 4.5V 150mOhm @ 950mA, 4.5V Surface Mount 1V @ 250µA 5.6 nC @ 4.5 V 20 V ±8V 458 pF @ 16 V - - SOT-563 - 170mW (Ta) -55°C ~ 150°C (TJ)
BSS119L6433

BSS119L6433

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies

86,725 -
BSS119L6433

数据表

SIPMOS® TO-236-3, SC-59, SOT-23-3 Bulk Active N-Channel MOSFET (Metal Oxide) 170mA (Ta) 4.5V, 10V 6Ohm @ 170mA, 10V Surface Mount 2.3V @ 50µA 2.5 nC @ 10 V 100 V ±20V 78 pF @ 25 V - - PG-SOT23 - 360mW (Ta) -55°C ~ 150°C (TJ)
NTK3134NT1H

NTK3134NT1H

MOSFET N-CH 20V 0.89A SOT723

onsemi

4,641 -
NTK3134NT1H

数据表

- SOT-723 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 750mA (Ta) 1.5V, 4.5V 350mOhm @ 890mA, 4.5V Surface Mount 1.2V @ 250µA - 20 V ±6V 120 pF @ 16 V - - SOT-723 - 310mW (Ta) -55°C ~ 150°C (TJ)
SCH1402-TL-E

SCH1402-TL-E

NCH 1.8V DRIVE SERIES

onsemi

15,000 -
SCH1402-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
BSH121,135

BSH121,135

MOSFET N-CH 75V 300MA SOT323

NXP USA Inc.

9,896 -
BSH121,135

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FDMS86200E

FDMS86200E

FET 150V 18.0 MOHM PQFN56

onsemi

4,416 -
FDMS86200E

数据表

- - Tape & Reel (TR) Obsolete - - 9.6A (Ta), 35A (Tc) - - - - - - - - - - - - - -
IXTA4N80P-TRL

IXTA4N80P-TRL

MOSFET N-CH 800V 3.6A TO263

Littelfuse Inc.

8,798 -
IXTA4N80P-TRL

数据表

Polar TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 3.4Ohm @ 1.8A, 10V Surface Mount 5.5V @ 100µA 14.2 nC @ 10 V 800 V ±30V 750 pF @ 25 V - - TO-263 (D2PAK) - 100W (Tc) -55°C ~ 150°C (TJ)
IXTA1N100P-TRL

IXTA1N100P-TRL

MOSFET N-CH 1000V 1A TO263

Littelfuse Inc.

2,455 -
IXTA1N100P-TRL

数据表

Polar TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1A (Tc) 10V 15Ohm @ 500mA, 10V Surface Mount 4.5V @ 50µA 15.5 nC @ 10 V 1000 V ±20V 331 pF @ 25 V - - TO-263 (D2PAK) - 50W (Tc) -55°C ~ 150°C (TJ)
SPI80N03S2L-04

SPI80N03S2L-04

MOSFET N-CH 30V 80A TO262-3

Infineon Technologies

7,882 -
SPI80N03S2L-04

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 4.2mOhm @ 80A, 10V Through Hole 2V @ 130µA 105 nC @ 10 V 30 V ±20V 3900 pF @ 25 V - - PG-TO262-3-1 - 188W (Tc) -55°C ~ 175°C (TJ)
STD150NH02L-1

STD150NH02L-1

MOSFET N-CH 24V 150A IPAK

STMicroelectronics

6,043 -
STD150NH02L-1

数据表

STripFET™ III TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 150A (Tc) 5V, 10V 3.5mOhm @ 75A, 10V Through Hole 1.8V @ 250µA 93 nC @ 10 V 24 V ±20V 4450 pF @ 15 V - - IPAK - 125W (Tc) -55°C ~ 175°C (TJ)
STD6NM60N-1

STD6NM60N-1

MOSFET N-CH 600V 4.6A IPAK

STMicroelectronics

4,571 -
STD6NM60N-1

数据表

MDmesh™ II TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.6A (Tc) 10V 920mOhm @ 2.3A, 10V Through Hole 4V @ 250µA 13 nC @ 10 V 600 V ±25V 420 pF @ 50 V - - TO-251 (IPAK) - 45W (Tc) -55°C ~ 150°C (TJ)
ISC0604NLSATMA1

ISC0604NLSATMA1

TRENCH 40<-<100V

Infineon Technologies

2,726 -
ISC0604NLSATMA1

数据表

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Ta), 166A (Tc) 4.5V, 10V 2.8mOhm @ 50A, 10V Surface Mount 2.3V @ 103µA 78 nC @ 10 V 80 V ±20V 6800 pF @ 40 V - - PG-TDSON-8 - 2.5W (Ta), 139W (Tc) -55°C ~ 150°C (TJ)
AONV420A70

AONV420A70

LINEAR IC

Alpha & Omega Semiconductor Inc.

5,917 -
AONV420A70

数据表

aMOS5™ 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.8A (Ta), 12A (Tc) 10V 420mOhm @ 6A, 10V Surface Mount 4.6V @ 250µA 21.5 nC @ 10 V 700 V ±20V 1360 pF @ 100 V - - 4-DFN (8x8) - 8.3W (Ta), 156W (Tc) -55°C ~ 150°C (TJ)
IRFZ44ESTRR

IRFZ44ESTRR

MOSFET N-CH 60V 48A D2PAK

Infineon Technologies

3,407 -
IRFZ44ESTRR

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 48A (Tc) 10V 23mOhm @ 29A, 10V Surface Mount 4V @ 250µA 60 nC @ 10 V 60 V ±20V 1360 pF @ 25 V - - D2PAK - 110W (Tc) -55°C ~ 175°C (TJ)
IRFZ44ESTRL

IRFZ44ESTRL

MOSFET N-CH 60V 48A D2PAK

Infineon Technologies

5,284 -
IRFZ44ESTRL

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 48A (Tc) 10V 23mOhm @ 29A, 10V Surface Mount 4V @ 250µA 60 nC @ 10 V 60 V ±20V 1360 pF @ 25 V - - D2PAK - 110W (Tc) -55°C ~ 175°C (TJ)
IXTU05N120

IXTU05N120

MOSFET N-CH 1200V 500MA TO251

IXYS

6,201 -
IXTU05N120

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500mA (Tc) - - Through Hole - - 1200 V - - - - TO-251AA - - -
SUP53P06-20-GE3

SUP53P06-20-GE3

MOSFET P-CH 60V 9.2A/53A TO220AB

Vishay Siliconix

5,152 -
SUP53P06-20-GE3

数据表

TrenchFET® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 9.2A (Ta), 53A (Tc) 4.5V, 10V 19.5mOhm @ 30A, 10V Through Hole 3V @ 250µA 115 nC @ 10 V 60 V ±20V 3500 pF @ 25 V - - TO-220AB - 3.1W (Ta), 104.2W (Tc) -55°C ~ 150°C (TJ)
IRF7433

IRF7433

MOSFET P-CH 12V 8.9A 8SO

Infineon Technologies

5,159 -
IRF7433

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 8.9A (Ta) 1.8V, 4.5V 24mOhm @ 8.7A, 4.5V Surface Mount 900mV @ 250µA 20 nC @ 4.5 V 12 V ±8V 1877 pF @ 10 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
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