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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BSP300H6327XUSA1

BSP300H6327XUSA1

MOSFET N-CH 800V 190MA SOT223-4

Infineon Technologies

8,935 -
BSP300H6327XUSA1

数据表

SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 190mA (Ta) 10V 20Ohm @ 190mA, 10V Surface Mount 4V @ 1mA - 800 V ±20V 230 pF @ 25 V - - PG-SOT223-4 - 1.8W (Ta) -55°C ~ 150°C (TJ)
TSM088NA03CR RLG

TSM088NA03CR RLG

MOSFET N-CH 30V 61A 8PDFN

Taiwan Semiconductor Corporation

4,259 -
TSM088NA03CR RLG

数据表

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 61A (Tc) 4.5V, 10V 8.8mOhm @ 13A, 10V Surface Mount 2.5V @ 250µA 12.6 nC @ 10 V 30 V ±20V 750 pF @ 15 V - - 8-PDFN (5x6) - 56W (Tc) -55°C ~ 150°C (TJ)
2SK2095N

2SK2095N

MOSFET N-CH 60V 10A TO220FN

Rohm Semiconductor

8,492 -
2SK2095N

数据表

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 4V, 10V 95mOhm @ 5A, 10V Through Hole 2.5V @ 1mA - 60 V ±20V 1600 pF @ 10 V - - TO-220FN - 30W (Tc) 150°C (TJ)
IRF7460TR

IRF7460TR

MOSFET N-CH 20V 12A 8SO

Infineon Technologies

3,683 -
IRF7460TR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta) 4.5V, 10V 10mOhm @ 12A, 10V Surface Mount 3V @ 250µA 19 nC @ 4.5 V 20 V ±20V 2050 pF @ 10 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
AOT2142L

AOT2142L

MOSFET N-CHANNEL 40V 120A TO220

Alpha & Omega Semiconductor Inc.

6,940 -
AOT2142L

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 1.9mOhm @ 20A, 10V Through Hole 2.3V @ 250µA 100 nC @ 10 V 40 V ±20V 8320 pF @ 20 V - - TO-220 - 312W (Tc) -55°C ~ 175°C (TJ)
TSM70NB1R4CP

TSM70NB1R4CP

700V, 3A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

5,653 -
TSM70NB1R4CP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 1.4Ohm @ 1.2A, 10V Surface Mount 4V @ 250µA 7.4 nC @ 10 V 700 V ±30V 317 pF @ 100 V - - TO-252 (DPAK) - 28W (Tc) -55°C ~ 150°C (TJ)
IXTY1N80P-TRL

IXTY1N80P-TRL

MOSFET N-CH 800V 1A TO252

Littelfuse Inc.

5,443 -
IXTY1N80P-TRL

数据表

Polar TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1A (Tc) 10V 14Ohm @ 500mA, 10V Surface Mount 4V @ 50µA 9 nC @ 10 V 800 V ±30V 250 pF @ 25 V - - TO-252AA - 42W (Tc) -55°C ~ 150°C (TJ)
SI7302DN-T1-GE3

SI7302DN-T1-GE3

MOSFET N-CH 220V 8.4A PPAK1212-8

Vishay Siliconix

8,256 -
SI7302DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.4A (Tc) 4.5V, 10V 320mOhm @ 2.3A, 10V Surface Mount 4V @ 250µA 21 nC @ 10 V 220 V ±20V 645 pF @ 15 V - - PowerPAK® 1212-8 - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
MCH6635-TL-E-ON

MCH6635-TL-E-ON

MOSFET P-CH

onsemi

147,000 -
MCH6635-TL-E-ON

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
IRFZ48NSTRR

IRFZ48NSTRR

MOSFET N-CH 55V 64A D2PAK

Infineon Technologies

6,952 -
IRFZ48NSTRR

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 64A (Tc) 10V 14mOhm @ 32A, 10V Surface Mount 4V @ 250µA 81 nC @ 10 V 55 V ±20V 1970 pF @ 25 V - - D2PAK - 3.8W (Ta), 130W (Tc) -55°C ~ 175°C (TJ)
3LP01S-TL-E

3LP01S-TL-E

MOSFET P-CH 30V 100MA SMCP

onsemi

8,278 -
3LP01S-TL-E

数据表

- SC-75, SOT-416 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 100mA (Ta) 1.5V, 4V 10.4Ohm @ 50mA, 4V Surface Mount - 1.43 nC @ 10 V 30 V ±10V 7.5 pF @ 10 V - - SMCP - 150mW (Ta) 150°C (TJ)
IAUC120N06S5N011ATMA1

IAUC120N06S5N011ATMA1

MOSFET_)40V 60V)

Infineon Technologies

7,994 -
IAUC120N06S5N011ATMA1

数据表

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 310A (Tj) 7V, 10V 1.12mOhm @ 60A, 10V Surface Mount 3.4V @ 130µA 137 nC @ 10 V 60 V ±20V 9822 pF @ 30 V - - PG-TDSON-8-53 - 188W (Tc) -55°C ~ 175°C (TJ)
IQE036N08NM6CGSCATMA1

IQE036N08NM6CGSCATMA1

TRENCH 40<-<100V

Infineon Technologies

9,116 -
IQE036N08NM6CGSCATMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IQE036N08NM6SCATMA1

IQE036N08NM6SCATMA1

TRENCH 40<-<100V

Infineon Technologies

3,595 -
IQE036N08NM6SCATMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
MCB70N15Y-TP

MCB70N15Y-TP

MOSFET

Micro Commercial Co

4,629 -
MCB70N15Y-TP

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 6V, 10V 17mOhm @ 20A, 10V Surface Mount 4V @ 250µA 40 nC @ 10 V 150 V ±20V 2517 pF @ 75 V - - D2PAK - 180W (Tj) -55°C ~ 175°C (TJ)
94-4737

94-4737

MOSFET N-CH 30V 33A DPAK

Infineon Technologies

2,362 -
94-4737

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 33A (Tc) 10V 31mOhm @ 18A, 10V Surface Mount 4V @ 250µA 29 nC @ 10 V 30 V ±20V 750 pF @ 25 V - - TO-252AA (DPAK) - 57W (Tc) -55°C ~ 150°C (TJ)
AONS62602

AONS62602

N

Alpha & Omega Semiconductor Inc.

3,921 -
AONS62602

数据表

AlphaSGT™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 41A (Ta), 85A (Tc) 4.5V, 10V 2.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 110 nC @ 10 V 60 V ±20V 5630 pF @ 30 V - - 8-DFN (5x6) - 7.3W (Ta), 208W (Tc) -55°C ~ 150°C (TJ)
NTK3043NT1H

NTK3043NT1H

NFET SOT723 20V 285MA 3.5

onsemi

132,000 -
NTK3043NT1H

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK3856-5-TB-E

2SK3856-5-TB-E

NCH 30MA 15V MOSFET

onsemi

114,000 -
2SK3856-5-TB-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
3LP01SS-TL-H

3LP01SS-TL-H

MOSFET P-CH 30V 100MA SMCP

onsemi

7,789 -
3LP01SS-TL-H

数据表

- SC-75, SOT-416 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 100mA (Ta) 1.5V, 4V 10.4Ohm @ 50mA, 4V Surface Mount - 1.43 nC @ 10 V 30 V ±10V 7.5 pF @ 10 V - - SMCP - 150mW (Ta) 150°C (TJ)
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