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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NTK3134NT1H

NTK3134NT1H

0.75A, 20V, N-CHANNEL MOSFET

onsemi

47,113 -
NTK3134NT1H

数据表

- SOT-723 Bulk Active N-Channel MOSFET (Metal Oxide) 750mA (Ta) 1.5V, 4.5V 350mOhm @ 890mA, 4.5V Surface Mount 1.2V @ 250µA - 20 V ±6V 120 pF @ 16 V - - SOT-723 - 310mW (Ta) -55°C ~ 150°C (TJ)
MCH3317-TL-E

MCH3317-TL-E

PCH 1.8V DRIVE SERIES

onsemi

45,000 -
MCH3317-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
5LP01SS-TL-H

5LP01SS-TL-H

MOSFET P-CH 50V 70MA 3SSFP

onsemi

3,917 -
5LP01SS-TL-H

数据表

- SC-81 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 70mA (Ta) 1.5V, 4V 23Ohm @ 40mA, 4V Surface Mount - 1.4 nC @ 10 V 50 V ±10V 7.4 pF @ 10 V - - 3-SSFP - 150mW (Ta) 150°C (TJ)
5LP01C-TB-E

5LP01C-TB-E

MOSFET P-CH 50V 70MA 3CP

onsemi

4,616 -
5LP01C-TB-E

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 70mA (Ta) 1.5V, 4V 23Ohm @ 40mA, 4V Surface Mount - 1.4 nC @ 10 V 50 V ±10V 7.4 pF @ 10 V - - SC-59-3/CP3 - 250mW (Ta) 150°C (TJ)
2SK544D

2SK544D

N-CHANNEL SMALL SIGNAL MOSFET

onsemi

33,921 -
2SK544D

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
MCH6413-TL-E

MCH6413-TL-E

NCH 1.8V DRIVE SERIES

onsemi

30,000 -
MCH6413-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
3LN01C-TB-H

3LN01C-TB-H

MOSFET N-CH 30V 150MA 3CP

onsemi

9,330 -
3LN01C-TB-H

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 150mA (Ta) 1.5V, 4V 3.7Ohm @ 80mA, 4V Surface Mount - 1.58 nC @ 10 V 30 V ±10V 7 pF @ 10 V - - SC-59-3/CP3 - 250mW (Ta) 150°C (TJ)
PMT200EN,115

PMT200EN,115

MOSFET N-CH 100V 1.8A SOT223

NXP USA Inc.

6,802 -
PMT200EN,115

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.8A (Ta) 4.5V, 10V 235mOhm @ 1.5A, 10V Surface Mount 2.5V @ 250µA 10 nC @ 10 V 100 V ±20V 475 pF @ 80 V - - SC-73 - 800mW (Ta), 8.3W (Tc) -55°C ~ 150°C (TJ)
3LP01C-TB-H

3LP01C-TB-H

MOSFET P-CH 30V 100MA 3CP

onsemi

4,023 -
3LP01C-TB-H

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 100mA (Ta) 1.5V, 4V 10.4Ohm @ 50mA, 4V Surface Mount - 1.43 nC @ 10 V 30 V ±10V 7.5 pF @ 10 V - - SC-59-3/CP3 - 250mW (Ta) 150°C (TJ)
PMT200EN,135

PMT200EN,135

MOSFET N-CH 100V 1.8A SOT223

NXP USA Inc.

5,706 -
PMT200EN,135

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.8A (Ta) 4.5V, 10V 235mOhm @ 1.5A, 10V Surface Mount 2.5V @ 250µA 10 nC @ 10 V 100 V ±20V 475 pF @ 80 V - - SC-73 - 800mW (Ta), 8.3W (Tc) -55°C ~ 150°C (TJ)
STD3055L104T4G

STD3055L104T4G

MOSFET N-CH 60V 12A DPAK-3

onsemi

6,462 -
STD3055L104T4G

数据表

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
NTLUS3A18PZCTCG

NTLUS3A18PZCTCG

MOSFET P-CH 20V 5.1A 6UDFN

onsemi

5,194 -
NTLUS3A18PZCTCG

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.1A (Ta) 1.5V, 4.5V 18mOhm @ 7A, 4.5V Surface Mount 1V @ 250µA 28 nC @ 4.5 V 20 V ±8V 2240 pF @ 15 V - - 6-UDFN (2x2) - - -
5LN01SS-TL-E

5LN01SS-TL-E

N-CHANNEL SILICON MOSFET

Sanyo

7,970 -
5LN01SS-TL-E

数据表

- SC-81 Bulk Active N-Channel MOSFET (Metal Oxide) 100mA (Ta) 1.5V, 4V 7.8Ohm @ 50mA, 4V Surface Mount - 1.57 nC @ 10 V 50 V ±10V 6600 pF @ 10 V - - 3-SSFP - 150mW (Ta) 150°C (TJ)
CPH3338-T-TL-H

CPH3338-T-TL-H

PCH 4V DRIVE SERIES

onsemi

6,000 -
CPH3338-T-TL-H

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK544E

2SK544E

N-CHANNEL SMALL SIGNAL MOSFET

onsemi

4,279 -
2SK544E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
G01N20LE

G01N20LE

MOSFET N-CH ESD 200V 1.7A SOT-23

Goford Semiconductor

57,000 -
G01N20LE

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.7A (Tc) 4.5V, 10V 700mOhm @ 1A, 10V Surface Mount 2.5V @ 250µA - - ±20V - - - SOT-23-3 - 1.5W (Tc) -55°C ~ 150°C (TJ)
G1003A

G1003A

MOSFET N-CH ESD 100V 1.7A SOT-23

Goford Semiconductor

21,000 -
G1003A

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3A (Tc) 4.5V, 10V 210mOhm @ 3A, 10V Surface Mount 3V @ 250µA - - ±20V - - - SOT-23-3 - 5W (Tc) -55°C ~ 150°C (TJ)
G05P06L

G05P06L

MOSFET P-CH 60V 5A SOT-23-3L

Goford Semiconductor

15,000 -
G05P06L

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 5A (Tc) 4.5V, 10V 80mOhm @ 4A, 10V Surface Mount 2.5V @ 250µA - - ±20V - - - SOT-23-3 - 2.6W (Tc) -55°C ~ 150°C (TJ)
RM2333

RM2333

MOSFET P-CHANNEL 12V 6A SOT23

Rectron USA

15,000 -
RM2333

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 6A (Ta) 2.5V, 4.5V 30mOhm @ 6A, 4.5V Surface Mount 1V @ 250µA - 12 V ±12V 1100 pF @ 6 V - - SOT-23 - 1.8W (Ta) -55°C ~ 150°C (TJ)
G2002A

G2002A

MOSFET N-CH 200V 2A SOT-23-6L

Goford Semiconductor

117,000 -
G2002A

数据表

TrenchFET® SOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Tc) 4.5V, 10V 540mOhm @ 1A, 10V Surface Mount 3V @ 250µA - - ±20V - - - SOT-23-6L - 2.5W (Tc) -55°C ~ 150°C (TJ)
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