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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SIS448DN-T1-GE3

SIS448DN-T1-GE3

MOSFET N-CH 30V 35A PPAK1212-8

Vishay Siliconix

3,766 -
SIS448DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 5.6mOhm @ 10A, 10V Surface Mount 2.3V @ 250µA 38 nC @ 10 V 30 V ±20V 1575 pF @ 15 V - - PowerPAK® 1212-8 - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
DI032N03PTK

DI032N03PTK

MOSFET POWERQFN 3X3 N 30V

Diotec Semiconductor

4,647 -
DI032N03PTK

数据表

- 8-PowerVDFN Bulk Active N-Channel MOSFET (Metal Oxide) 32A (Tc) 4.5V, 10V 5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 38 nC @ 10 V 30 V ±20V 2300 pF @ 15 V - - 8-QFN (3x3) - 28W (Tc) -55°C ~ 150°C (TJ)
FQPF2NA90

FQPF2NA90

MOSFET N-CH 900V 1.7A TO220F

onsemi

9,938 -
FQPF2NA90

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.7A (Tc) 10V 5.8Ohm @ 850mA, 10V Through Hole 5V @ 250µA 20 nC @ 10 V 900 V ±30V 680 pF @ 25 V - - TO-220F-3 - 39W (Tc) -55°C ~ 150°C (TJ)
FQB2N50TM

FQB2N50TM

MOSFET N-CH 500V 2.1A D2PAK

onsemi

9,750 -
FQB2N50TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.1A (Tc) 10V 5.3Ohm @ 1.05A, 10V Surface Mount 5V @ 250µA 8 nC @ 10 V 500 V ±30V 230 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 55W (Tc) -55°C ~ 150°C (TJ)
RJK5035DPP-A0#T2

RJK5035DPP-A0#T2

MOSFET N-CH 600V 5A TO220FP

Renesas Electronics Corporation

2,015 -
RJK5035DPP-A0#T2

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 5A (Ta) 10V 1.6Ohm @ 2.5A, 10V Through Hole - 19 nC @ 10 V 600 V ±30V 600 pF @ 25 V - - TO-220FP - 29W (Ta) 150°C
SIHA15N80AE-GE3

SIHA15N80AE-GE3

MOSFET N-CH 800V 6A TO220

Vishay Siliconix

973 -
SIHA15N80AE-GE3

数据表

E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 350mOhm @ 7.5A, 10V Through Hole 4V @ 250µA 53 nC @ 10 V 800 V ±30V 1093 pF @ 100 V - - TO-220 Full Pack - 33W (Tc) -55°C ~ 150°C (TJ)
NX7002BK215

NX7002BK215

NEXPERIA NX7002BK - SMALL SIGNAL

Nexperia USA Inc.

8,033 -
NX7002BK215

数据表

- TO-236-3, SC-59, SOT-23-3 Bulk Active N-Channel MOSFET (Metal Oxide) 270mA (Ta), 330mA (Tc) 5V, 10V 2.8Ohm @ 200mA, 10V Surface Mount 2.1V @ 250µA 1 nC @ 10 V 60 V ±20V 23.6 pF @ 10 V - - SOT-23-3 (TO-236) - 310mW (Ta), 1.67W (Tc) -55°C ~ 150°C (TJ)
PMN40UPEA115

PMN40UPEA115

NEXPERIA PMN40UPEA - SMALL SIGNA

Nexperia USA Inc.

2,425 -
PMN40UPEA115

数据表

- SOT-23-6 Thin, TSOT-23-6 Bulk Active P-Channel MOSFET (Metal Oxide) 4.7A (Ta) 1.8V, 4.5V 43mOhm @ 3A, 4.5V Surface Mount 950mV @ 250µA 23 nC @ 4.5 V 20 V ±8V 1820 pF @ 10 V AEC-Q101 - 6-TSOP Automotive 500mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ)
AUIRF6218S

AUIRF6218S

AUIRF6218 - 20V-150V P-CHANNEL A

International Rectifier

2,025 -
AUIRF6218S

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active P-Channel MOSFET (Metal Oxide) 27A (Tc) 10V 150mOhm @ 16A, 10V Surface Mount 5V @ 250µA 110 nC @ 10 V 150 V ±20V 2210 pF @ 25 V - - PG-TO263-3 - 250W (Tc) -55°C ~ 175°C (TJ)
PSMN5R0-100PS,127

PSMN5R0-100PS,127

NOW NEXPERIA PSMN5R0-100PS - 120

NXP Semiconductors

8,850 -
PSMN5R0-100PS,127

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 5mOhm @ 25A, 10V Through Hole 4V @ 1mA 170 nC @ 10 V 100 V ±20V 9900 pF @ 50 V - - TO-220AB - 338W (Tc) -55°C ~ 175°C (TJ)
STP318N4F6

STP318N4F6

MOSFET N-CH 40V 160A TO220

STMicroelectronics

4,176 -
STP318N4F6

数据表

STripFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 160A (Tc) 10V 2.2mOhm @ 80A, 10V Through Hole 4V @ 250µA 240 nC @ 10 V 40 V ±20V 13800000 pF @ 25 V - - TO-220 - 341W (Tc) -55°C ~ 175°C (TJ)
NTLJS14D0P03P8ZTAG

NTLJS14D0P03P8ZTAG

MOSFET P-CH 30V 11A 6MICROFET

onsemi

8,331 -
NTLJS14D0P03P8ZTAG

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
FQB7P20TM-F085P

FQB7P20TM-F085P

MOSFET P-CH 200V 7.3A D2PAK

onsemi

3,126 -
FQB7P20TM-F085P

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 7.3A (Tc) 10V 690mOhm @ 3.65A, 10V Surface Mount 5V @ 250µA 25 nC @ 10 V 200 V ±30V 770 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 90W (Tc) -55°C ~ 150°C (TJ)
IPP60R210CFD7XKSA1

IPP60R210CFD7XKSA1

MOSFET N CH

Infineon Technologies

435 -
IPP60R210CFD7XKSA1

数据表

CoolMOS™ CFD7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 210mOhm @ 4.9A, 10V Through Hole 4.5V @ 240µA 23 nC @ 10 V 600 V ±20V 1015 pF @ 400 V - - PG-TO220-3 - 64W (Tc) -55°C ~ 150°C (TJ)
FCPF1300N80Z

FCPF1300N80Z

MOSFET N-CH 800V 4A TO220F

onsemi

380 -
FCPF1300N80Z

数据表

SuperFET® II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 1.3Ohm @ 2A, 10V Through Hole 4.5V @ 400µA 21 nC @ 10 V 800 V ±20V 880 pF @ 100 V - - TO-220F-3 - 24W (Tc) -55°C ~ 150°C (TJ)
TK1R4F04PB,LXGQ

TK1R4F04PB,LXGQ

MOSFET N-CH 40V 160A TO220SM

Toshiba Semiconductor and Storage

1,000 -
TK1R4F04PB,LXGQ

数据表

U-MOSIX-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 160A (Ta) 6V, 10V 1.9mOhm @ 80A, 6V Surface Mount 3V @ 500µA 103 nC @ 10 V 40 V ±20V 5500 pF @ 10 V - - TO-220SM(W) - 205W (Tc) 175°C
IPA60R180C7XKSA1

IPA60R180C7XKSA1

MOSFET N-CH 600V 9A TO220-FP

Infineon Technologies

203 -
IPA60R180C7XKSA1

数据表

CoolMOS™ C7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 180mOhm @ 5.3A, 10V Through Hole 4V @ 260µA 24 nC @ 10 V 600 V ±20V 1080 pF @ 400 V - - PG-TO220 Full Pack - 29W (Tc) -55°C ~ 150°C (TJ)
STD8N65M5

STD8N65M5

MOSFET N-CH 650V 7A DPAK

STMicroelectronics

4,523 -
STD8N65M5

数据表

MDmesh™ V TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 600mOhm @ 3.5A, 10V Surface Mount 5V @ 250µA 15 nC @ 10 V 650 V ±25V 690 pF @ 100 V - - DPAK - 70W (Tc) 150°C (TJ)
STF16N60M6

STF16N60M6

MOSFET N-CH 600V TO220-3 FP

STMicroelectronics

1,174 -
STF16N60M6

数据表

UltraFASTmesh™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 320mOhm @ 6A, 10V Through Hole 4.75V @ 250µA 16.7 nC @ 10 V 600 V ±25V 575 pF @ 100 V - - TO-220FP - 25W (Tc) -55°C ~ 150°C (TJ)
HUF75639S3ST

HUF75639S3ST

MOSFET N-CH 100V 56A D2PAK

onsemi

735 -
HUF75639S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 25mOhm @ 56A, 10V Surface Mount 4V @ 250µA 130 nC @ 20 V 100 V ±20V 2000 pF @ 25 V - - TO-263 (D2PAK) - 200W (Tc) -55°C ~ 175°C (TJ)
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