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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SSM3K15CT,L3F

SSM3K15CT,L3F

MOSFET N-CH 30V 100MA CST3

Toshiba Semiconductor and Storage

2,779 -
SSM3K15CT,L3F

数据表

- SC-101, SOT-883 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100mA (Ta) 2.5V, 4V 4Ohm @ 10mA, 4V Surface Mount 1.5V @ 100µA - 30 V ±20V 7.8 pF @ 3 V - - CST3 - 100mW (Ta) 150°C
MCW200N10Y-TP

MCW200N10Y-TP

MOSFET N-CH 200A

Micro Commercial Co

2,584 -
MCW200N10Y-TP

数据表

- TO-247-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200A 6V, 10V 2.1mOhm @ 20A, 10V Through Hole 4V @ 250µA 237 nC @ 10 V 100 V ±20V 13310 pF @ 50 V - - TO-247-3 - 312W -55°C ~ 150°C (TJ)
MCM3006-TP

MCM3006-TP

MOSFET N-CH DFN

Micro Commercial Co

2,585 -
MCM3006-TP

数据表

- 6-VDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.4A 4.5V, 10V 35.4mOhm @ 5A, 10V Surface Mount 3V @ 250µA 16.2 nC @ 10 V 30 V ±20V 915 pF @ 15 V - - DFN2020-6LE - 1.56W -55°C ~ 150°C (TJ)
MCP100N10Y-TP

MCP100N10Y-TP

MOSFET N-CH 100V 100A TO220AB

Micro Commercial Co

3,171 -
MCP100N10Y-TP

数据表

- TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A 4.5V, 10V 3.5mOhm @ 20A, 10V Through Hole 4V @ 250µA 122 nC @ 10 V 100 V ±20V 6897 pF @ 50 V - - TO-220AB (H) - 147W -55°C ~ 150°C (TJ)
MCAC75N02-TP

MCAC75N02-TP

MOSFET N-CH 20 75A DFN5060

Micro Commercial Co

6,103 -
MCAC75N02-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A 2.5V, 4.5V 4.8mOhm @ 20A, 4.5V Surface Mount 1V @ 250µA 33 nC @ 4.5 V 20 V ±10V 2386 pF @ 10 V - - DFN5060 - 35W -55°C ~ 150°C (TJ)
IPD95R450PFD7ATMA1

IPD95R450PFD7ATMA1

MOSFET N-CH 950V 13.3A TO252-3

Infineon Technologies

2,466 -
IPD95R450PFD7ATMA1

数据表

CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13.3A (Tc) 10V 450mOhm @ 7.2A, 10V Surface Mount 3.5V @ 360µA 43 nC @ 10 V 950 V ±20V 1230 pF @ 400 V - - PG-TO252-3 - 104W (Tc) -55°C ~ 150°C (TJ)
R6006JNXC7G

R6006JNXC7G

MOSFET N-CH 600V 6A TO220FM

Rohm Semiconductor

869 -
R6006JNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 15V 936mOhm @ 3A, 15V Through Hole 7V @ 800µA 15.5 nC @ 15 V 600 V ±30V 410 pF @ 100 V - - TO-220FM - 43W (Tc) 150°C (TJ)
BSC011N03LSTATMA1

BSC011N03LSTATMA1

MOSFET N-CH 30V 39A/100A TDSON

Infineon Technologies

5,000 -
BSC011N03LSTATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 39A (Ta), 100A (Tc) 4.5V, 10V 1.1mOhm @ 30A, 10V Surface Mount 2V @ 250µA 48 nC @ 4.5 V 30 V ±20V 6300 pF @ 15 V - - PG-TDSON-8 FL - 3W (Ta), 115W (Tc) -55°C ~ 175°C (TJ)
TK1R5R04PB,LXGQ

TK1R5R04PB,LXGQ

MOSFET N-CH 40V 160A D2PAK

Toshiba Semiconductor and Storage

2,900 -
TK1R5R04PB,LXGQ

数据表

U-MOSIX-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 160A (Ta) 6V, 10V 1.5mOhm @ 80A, 10V Surface Mount 3V @ 500µA 103 nC @ 10 V 40 V ±20V 5500 pF @ 10 V - - D2PAK+ - 205W (Tc) 175°C
R6009JND3TL1

R6009JND3TL1

MOSFET N-CH 600V 9A TO252

Rohm Semiconductor

2,450 -
R6009JND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 15V 585mOhm @ 4.5A, 15V Surface Mount 7V @ 1.38mA 22 nC @ 15 V 600 V ±30V 645 pF @ 100 V - - TO-252 - 125W (Tc) -55°C ~ 150°C (TJ)
STL18N60M2

STL18N60M2

MOSFET N-CH 600V 9A POWERFLAT HV

STMicroelectronics

1,925 -
STL18N60M2

数据表

MDmesh™ II Plus 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 308mOhm @ 4.5A, 10V Surface Mount 4V @ 250µA 21.5 nC @ 10 V 600 V ±25V 791 pF @ 100 V - - PowerFlat™ (5x6) HV - 57W (Tc) 150°C (TJ)
R6020ENXC7G

R6020ENXC7G

600V 20A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

950 -
R6020ENXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 196mOhm @ 9.5A, 10V Through Hole 4V @ 1mA 60 nC @ 10 V 600 V ±20V 1400 pF @ 25 V - - TO-220FM - 68W (Tc) 150°C (TJ)
IPA60R125CFD7XKSA1

IPA60R125CFD7XKSA1

MOSFET N-CH 600V 11A TO220

Infineon Technologies

729 -
IPA60R125CFD7XKSA1

数据表

OptiMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 125mOhm @ 7.8A, 10V Through Hole 4.5V @ 390µA 36 nC @ 10 V 600 V ±20V 1503 pF @ 400 V - - PG-TO220 Full Pack - 32W (Tc) -55°C ~ 150°C (TJ)
R6530KNZC17

R6530KNZC17

MOSFET N-CH 650V 30A TO3

Rohm Semiconductor

300 -
R6530KNZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 140mOhm @ 14.5A, 10V Through Hole 5V @ 960µA 56 nC @ 10 V 650 V ±20V 2350 pF @ 25 V - - TO-3PF - 86W (Tc) 150°C (TJ)
R6530ENZC17

R6530ENZC17

MOSFET N-CH 650V 30A TO3

Rohm Semiconductor

300 -
R6530ENZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 140mOhm @ 14.5A, 10V Through Hole 4V @ 960µA 90 nC @ 10 V 650 V ±20V 2100 pF @ 25 V - - TO-3PF - 86W (Tc) 150°C (TJ)
RSS095N05HZGTB

RSS095N05HZGTB

NCH 45V 9.5A POWER MOSFET: RSS09

Rohm Semiconductor

2,250 -
RSS095N05HZGTB

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9.5A (Ta) 4V, 10V 16mOhm @ 9.5A, 10V Surface Mount 2.5V @ 1mA 26.5 nC @ 5 V 45 V ±20V 1830 pF @ 10 V - - 8-SOP - 1.4W (Ta) 150°C (TJ)
PJMF390N65EC_T0_00001

PJMF390N65EC_T0_00001

650V SUPER JUNCTION MOSFET

Panjit International Inc.

1,785 -
PJMF390N65EC_T0_00001

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 390mOhm @ 5A, 10V Through Hole 4V @ 250µA 19 nC @ 10 V 650 V ±30V 726 pF @ 400 V - - ITO-220AB-F - 29.5W (Tc) -55°C ~ 150°C (TJ)
STP12NK30Z

STP12NK30Z

MOSFET N-CH 300V 9A TO220AB

STMicroelectronics

1,490 -
STP12NK30Z

数据表

SuperMESH™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 400mOhm @ 4.5A, 10V Through Hole 4.5V @ 50µA 35 nC @ 10 V 300 V ±30V 670 pF @ 25 V - - TO-220 - 90W (Tc) -55°C ~ 150°C (TJ)
NVMFS4C302NT1G

NVMFS4C302NT1G

MOSFET N-CH 30V 43A/241A 5DFN

onsemi

1,455 -
NVMFS4C302NT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 43A (Ta), 241A (Tc) 4.5V, 10V 1.15mOhm @ 30A, 10V Surface Mount 2.2V @ 250µA 82 nC @ 10 V 30 V ±20V 5780 pF @ 15 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.75W (Ta), 115W (Tc) -55°C ~ 175°C (TJ)
N0436N-ZK-E1-AY

N0436N-ZK-E1-AY

ABU / MOSFET

Renesas Electronics Corporation

5,857 -
N0436N-ZK-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 56A (Ta) 10V 4.7mOhm @ 28A, 10V Surface Mount 4V @ 1mA 62 nC @ 10 V 40 V ±20V 3200 pF @ 25 V - - TO-252 - 1W (Ta), 87.4W (Tc) 150°C
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