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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IGT60R070D1E8220ATMA1

IGT60R070D1E8220ATMA1

GAN HV

Infineon Technologies

3,479 -
IGT60R070D1E8220ATMA1

数据表

CoolGaN™ 8-PowerSFN Bulk Obsolete N-Channel GaNFET (Gallium Nitride) 31A (Tc) - - Surface Mount 1.6V @ 2.6mA - 600 V -10V 380 pF @ 400 V - - PG-HSOF-8-3 - 125W (Tc) -55°C ~ 150°C (TJ)
IGO60R070D1E8220AUMA1

IGO60R070D1E8220AUMA1

GAN HV

Infineon Technologies

4,134 -
IGO60R070D1E8220AUMA1

数据表

CoolGaN™ 20-PowerSOIC (0.433", 11.00mm Width) Bulk Obsolete N-Channel GaNFET (Gallium Nitride) 31A (Tc) - - Surface Mount 1.6V @ 2.6mA - 600 V -10V 380 pF @ 400 V - - PG-DSO-20-85 - 125W (Tc) -55°C ~ 150°C (TJ)
PHM2230DLS/1X

PHM2230DLS/1X

MOSFET

Nexperia USA Inc.

8,234 -
PHM2230DLS/1X

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
PSMN0R7-25YLD/1X

PSMN0R7-25YLD/1X

MOSFET

Nexperia USA Inc.

2,768 -
PSMN0R7-25YLD/1X

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
PSMN3R0-30YLD/1X

PSMN3R0-30YLD/1X

MOSFET

Nexperia USA Inc.

3,140 -
PSMN3R0-30YLD/1X

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
BUK9Y7R6-40E/DMANX

BUK9Y7R6-40E/DMANX

MOSFET

Nexperia USA Inc.

5,397 -
BUK9Y7R6-40E/DMANX

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
PHM2230DLSX

PHM2230DLSX

MOSFET

Nexperia USA Inc.

7,564 -
PHM2230DLSX

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
PSMN1R0-25YLD/1X

PSMN1R0-25YLD/1X

MOSFET

Nexperia USA Inc.

3,631 -
PSMN1R0-25YLD/1X

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
PSMN1R4-40YLD/1X

PSMN1R4-40YLD/1X

MOSFET

Nexperia USA Inc.

9,461 -
PSMN1R4-40YLD/1X

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
BUK9Y3R0-40E/DMANX

BUK9Y3R0-40E/DMANX

MOSFET

Nexperia USA Inc.

2,415 -
BUK9Y3R0-40E/DMANX

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
PSMN1R4-30YLD/1X

PSMN1R4-30YLD/1X

MOSFET

Nexperia USA Inc.

5,689 -
PSMN1R4-30YLD/1X

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
PSMN1R0-30YLD/1X

PSMN1R0-30YLD/1X

MOSFET

Nexperia USA Inc.

3,204 -
PSMN1R0-30YLD/1X

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
SIHF12N65E-GE3

SIHF12N65E-GE3

MOSFET N-CH 650V 12A TO220

Vishay Siliconix

993 -
SIHF12N65E-GE3

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 380mOhm @ 6A, 10V Through Hole 4V @ 250µA 70 nC @ 10 V 650 V ±30V 1224 pF @ 100 V - - TO-220 Full Pack - 33W (Tc) -55°C ~ 150°C (TJ)
BUK7Y59-60E/DMANX

BUK7Y59-60E/DMANX

MOSFET

Nexperia USA Inc.

4,953 -
BUK7Y59-60E/DMANX

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IRF840ASTRLPBF

IRF840ASTRLPBF

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix

675 -
IRF840ASTRLPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 850mOhm @ 4.8A, 10V Surface Mount 4V @ 250µA 38 nC @ 10 V 500 V ±30V 1018 pF @ 25 V - - TO-263 (D2PAK) - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
PSMN2R4-30MLD/1X

PSMN2R4-30MLD/1X

MOSFET

Nexperia USA Inc.

5,155 -
PSMN2R4-30MLD/1X

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IXTP05N100

IXTP05N100

MOSFET N-CH 1000V 750MA TO220AB

Littelfuse Inc.

300 -
IXTP05N100

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 750mA (Tc) 10V 17Ohm @ 375mA, 10V Through Hole 4.5V @ 250µA 7.8 nC @ 10 V 1000 V ±30V 260 pF @ 25 V - - TO-220-3 - 40W (Tc) -55°C ~ 150°C (TJ)
PSMN1R0-40YLD/1X

PSMN1R0-40YLD/1X

MOSFET

Nexperia USA Inc.

8,913 -
PSMN1R0-40YLD/1X

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
SIDR104ADP-T1-RE3

SIDR104ADP-T1-RE3

MOSFET N-CH 100V 18.8A/81A PPAK

Vishay Siliconix

5,920 -
SIDR104ADP-T1-RE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18.8A (Ta), 81A (Tc) 7.5V, 10V 6.1mOhm @ 15A, 10V Surface Mount 4V @ 250µA 70 nC @ 10 V 100 V ±20V 3250 pF @ 50 V - - PowerPAK® SO-8DC - 5.4W (Ta), 100W (Tc) -55°C ~ 150°C (TJ)
SI4135-TP

SI4135-TP

N-CHANNEL MOSFET

Micro Commercial Co

3,104 -
SI4135-TP

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
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