富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AO3415

AO3415

MOSFET P-CH 20V 4A SOT23-3L

Alpha & Omega Semiconductor Inc.

6,436 -
AO3415

数据表

- 3-SMD, SOT-23-3 Variant Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4A (Ta) 1.5V, 4.5V 43mOhm @ 4A, 4.5V Surface Mount 1V @ 250µA 17.2 nC @ 4.5 V 20 V ±8V 1450 pF @ 10 V - - SOT-23-3 - 1.5W (Ta) -55°C ~ 150°C (TJ)
RS1E350BNTB1

RS1E350BNTB1

NCH 30V 80A POWER MOSFET: RS1E35

Rohm Semiconductor

2,217 -
RS1E350BNTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Ta), 80A (Tc) 4.5V, 10V 1.7mOhm @ 35A, 10V Surface Mount 2.5V @ 1mA 185 nC @ 10 V 30 V ±20V 7900 pF @ 15 V - - 8-HSOP - 3W (Ta), 35W (Tc) 150°C (TJ)
NTNS4CS69NTCG

NTNS4CS69NTCG

MOSFET N-CH 30V XDFN3

onsemi

4,639 -
NTNS4CS69NTCG

数据表

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
SIHP12N60E-BE3

SIHP12N60E-BE3

MOSFET N-CH 600V 12A TO220AB

Vishay Siliconix

346 -
SIHP12N60E-BE3

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) - 380mOhm @ 6A, 10V Through Hole 4V @ 250µA 58 nC @ 10 V 600 V ±30V 937 pF @ 100 V - - TO-220AB - 147W (Tc) -55°C ~ 150°C (TJ)
ISK036N03LM5AULA1

ISK036N03LM5AULA1

TRENCH <= 40V PG-VSON-6

Infineon Technologies

3,818 -
ISK036N03LM5AULA1

数据表

OptiMOS™ 5 6-PowerVDFN Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 44A (Tc) 4.5V, 10V 3.6mOhm @ 20A, 10V Surface Mount 2V @ 250µA 21.5 nC @ 10 V 30 V ±16V 1400 pF @ 15 V - - PG-VSON-6-1 - 11W (Tc) -55°C ~ 150°C (TJ)
RJK0854DPB-00#J5

RJK0854DPB-00#J5

MOSFET N-CH 80V 25A LFPAK

Renesas Electronics Corporation

2,540 -
RJK0854DPB-00#J5

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25A (Ta) 10V 13mOhm @ 12.5A, 10V Surface Mount - 27 nC @ 10 V 80 V ±20V 2000 pF @ 10 V - - LFPAK - 55W (Tc) 150°C (TJ)
IPT039N15N5XTMA1

IPT039N15N5XTMA1

TRENCH >=100V PG-HSOF-8

Infineon Technologies

3,173 -
IPT039N15N5XTMA1

数据表

OptiMOS™ 8-PowerSFN Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 190A (Tc) 8V, 10V 3.9mOhm @ 50A, 10V Surface Mount 4.6V @ 257µA 98 nC @ 10 V 150 V ±20V 7700 pF @ 75 V - - PG-HSOF-8 - 319W (Tc) -55°C ~ 175°C (TJ)
R6524ENXC7G

R6524ENXC7G

650V 24A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

990 -
R6524ENXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 185mOhm @ 11.3A, 10V Through Hole 4V @ 750µA 70 nC @ 10 V 650 V ±20V 1650 pF @ 25 V - - TO-220FM - 74W (Tc) 150°C (TJ)
IAUS300N04S4N007ATMA1

IAUS300N04S4N007ATMA1

MOSFET_(20V 40V) PG-HSOG-8

Infineon Technologies

2,411 -
IAUS300N04S4N007ATMA1

数据表

OptiMOS™ 8-PowerSMD, Gull Wing Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 300A (Tc) 10V 0.74mOhm @ 100A, 10V Surface Mount 4V @ 275µA 342 nC @ 10 V 40 V ±20V 27356 pF @ 25 V - - PG-HSOG-8-1 - 375W (Tc) -55°C ~ 175°C (TJ)
R6524KNXC7G

R6524KNXC7G

650V 24A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

989 -
R6524KNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 185mOhm @ 11.3A, 10V Through Hole 5V @ 750µA 45 nC @ 10 V 650 V ±20V 1850 pF @ 25 V - - TO-220FM - 74W (Tc) 150°C (TJ)
IMT65R022M1HXTMA1

IMT65R022M1HXTMA1

SILICON CARBIDE MOSFET PG-HSOF-8

Infineon Technologies

8,536 -
IMT65R022M1HXTMA1

数据表

* - Tape & Reel (TR) Discontinued at Digi-Key - - - - - - - - - - - - - - - - -
R6024ENXC7G

R6024ENXC7G

600V 24A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

980 -
R6024ENXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 165mOhm @ 11.3A, 10V Through Hole 4V @ 1mA 70 nC @ 10 V 600 V ±20V 1650 pF @ 25 V - - TO-220FM - 74W (Tc) 150°C (TJ)
R6024KNXC7G

R6024KNXC7G

600V 24A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

970 -
R6024KNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 165mOhm @ 11.3A, 10V Through Hole 5V @ 1mA 45 nC @ 10 V 600 V ±20V 2000 pF @ 25 V - - TO-220FM - 74W (Tc) 150°C (TJ)
IMT65R039M1HXTMA1

IMT65R039M1HXTMA1

SILICON CARBIDE MOSFET PG-HSOF-8

Infineon Technologies

9,446 -
IMT65R039M1HXTMA1

数据表

* - Tape & Reel (TR) Discontinued at Digi-Key - - - - - - - - - - - - - - - - -
R8002ANJFRGTL

R8002ANJFRGTL

MOSFET N-CH 800V 2A LPTS

Rohm Semiconductor

611 -
R8002ANJFRGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 4.3Ohm @ 1A, 10V Surface Mount 5V @ 1mA 13 nC @ 10 V 800 V ±30V 250 pF @ 25 V AEC-Q101 - LPTS Automotive 62W (Tc) 150°C (TJ)
IPB80P03P405ATMA2

IPB80P03P405ATMA2

MOSFET_(20V 40V) PG-TO263-3

Infineon Technologies

3,626 -
IPB80P03P405ATMA2

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 4.7mOhm @ 80A, 10V Surface Mount 4V @ 253µA 130 nC @ 10 V 30 V ±20V 10300 pF @ 25 V - - PG-TO263-3-2 - 137W (Tc) -55°C ~ 175°C (TJ)
GPI65060DFN

GPI65060DFN

GANFET N-CH 650V 60A DFN8X8

GaNPower

3,790 -
GPI65060DFN

数据表

- Die Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 60A 6V - Surface Mount 1.2V @ 3.5mA 16 nC @ 6 V 650 V +7.5V, -12V 420 pF @ 400 V - - Die - - -55°C ~ 150°C (TJ)
IPA80R460CEXKSA2

IPA80R460CEXKSA2

MOSFET N-CH 800V 10.8A TO220

Infineon Technologies

500 -
IPA80R460CEXKSA2

数据表

CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 10.8A (Ta) 10V 460mOhm @ 7.1A, 10V Through Hole 3.9V @ 680µA 64 nC @ 10 V 800 V ±20V 1600 pF @ 100 V - - PG-TO220-3-31 - 34W (Tc) -40°C ~ 150°C (TJ)
GPIHV30SB5L

GPIHV30SB5L

GANFET N-CH 1200V 30A TO263-5L

GaNPower

6,073 -
GPIHV30SB5L

数据表

- Die Tube Active N-Channel GaNFET (Gallium Nitride) 30A 6V - Surface Mount 1.4V @ 3.5mA 8.25 nC @ 6 V 1200 V +7.5V, -12V 236 pF @ 400 V - - Die - - -55°C ~ 150°C (TJ)
SQJQ148ER-T1_GE3

SQJQ148ER-T1_GE3

AUTOMOTIVE N-CHANNEL 40 V (D-S)

Vishay Siliconix

1,641 -
SQJQ148ER-T1_GE3

数据表

TrenchFET® Gen IV PowerPAK® 8 x 8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 372A (Tc) 10V 1.5mOhm @ 20A, 10V Surface Mount 3.5V @ 250µA 102 nC @ 10 V 40 V ±20V 5750 pF @ 25 V AEC-Q101 - PowerPAK® 8 x 8 Automotive 394W (Tc) -55°C ~ 175°C (TJ)
共 36322 条记录«上一页1... 3435363738394041...1817下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户