富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
DMTH8008LFG-13

DMTH8008LFG-13

MOSFET BVDSS: 61V~100V POWERDI33

Diodes Incorporated

5,346 -
DMTH8008LFG-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Ta), 70A (Tc) 4.5V, 10V 6.9mOhm @ 20A, 10V Surface Mount 2.5V @ 1mA 37.7 nC @ 10 V 80 V ±20V 2254 pF @ 40 V - - POWERDI3333-8 - 1.2W (Ta), 50W (Tc) -55°C ~ 175°C (TJ)
ZXMN2A02X8TC

ZXMN2A02X8TC

MOSFET N-CH 20V 6.2A 8MSOP

Diodes Incorporated

5,648 -
ZXMN2A02X8TC

数据表

- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6.2A (Ta) 2.5V, 4.5V 20mOhm @ 11A, 4.5V Surface Mount 700mV @ 250µA (Min) 18.6 nC @ 4.5 V 20 V ±20V 1900 pF @ 10 V - - 8-MSOP - 1.1W (Ta) -55°C ~ 150°C (TJ)
ZXMN3A02X8TC

ZXMN3A02X8TC

MOSFET N-CH 30V 5.3A 8MSOP

Diodes Incorporated

2,204 -
ZXMN3A02X8TC

数据表

- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.3A (Ta) 4.5V, 10V 25mOhm @ 12A, 10V Surface Mount 1V @ 250µA 26.8 nC @ 10 V 30 V ±20V 1400 pF @ 25 V - - 8-MSOP - 1.1W (Ta) -55°C ~ 150°C (TJ)
STD90NS3LLH7

STD90NS3LLH7

MOSFET N-CHANNEL 30V 80A DPAK

STMicroelectronics

8,077 -
STD90NS3LLH7

数据表

STripFET™ H7 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 3.4mOhm @ 40A, 10V Surface Mount 1.2V @ 1mA 13.7 nC @ 4.5 V 30 V ±20V 2110 pF @ 25 V - Schottky Diode (Body) DPAK - 57W (Tc) -55°C ~ 150°C (TJ)
IPD65R1K4CFDATMA2

IPD65R1K4CFDATMA2

MOSFET N-CH 650V 2.8A TO252-3

Infineon Technologies

7,773 -
IPD65R1K4CFDATMA2

数据表

CoolMOS™ CFD2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.8A (Tc) 10V 1.4Ohm @ 1A, 10V Surface Mount 4.5V @ 100µA 10 nC @ 10 V 650 V ±20V 262 pF @ 100 V - - PG-TO252-3 - 28.4W (Tc) -55°C ~ 150°C (TJ)
DMT10H009LFG-13

DMT10H009LFG-13

MOSFET N-CH 100V 13A/50A PWRDI

Diodes Incorporated

4,634 -
DMT10H009LFG-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Ta), 50A (Tc) 4.5V, 10V 8.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 41 nC @ 10 V 100 V ±20V 2361 pF @ 50 V - - POWERDI3333-8 - 2W (Ta), 30W (Tc) -55°C ~ 150°C (TJ)
BUK7Y3R0-40EX

BUK7Y3R0-40EX

MOSFET N-CH 40V LFPAK56 PWR-SO8

Nexperia USA Inc.

5,852 -
BUK7Y3R0-40EX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) - - - Surface Mount - - 40 V - - - - LFPAK56, Power-SO8 - - -
PJP6NA40_T0_00001

PJP6NA40_T0_00001

400V N-CHANNEL MOSFET

Panjit International Inc.

5,358 -
PJP6NA40_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 6A (Ta) 10V 950mOhm @ 3A, 10V Through Hole 4V @ 250µA 11.4 nC @ 10 V 400 V ±30V 553 pF @ 25 V - - TO-220AB - 100W (Tc) -55°C ~ 150°C (TJ)
PJP4NA60_T0_00001

PJP4NA60_T0_00001

600V N-CHANNEL MOSFET

Panjit International Inc.

7,234 -
PJP4NA60_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Ta) 10V 2.4Ohm @ 2A, 10V Through Hole 4V @ 250µA 11.1 nC @ 10 V 600 V ±30V 450 pF @ 25 V - - TO-220AB - 100W (Tc) -55°C ~ 150°C (TJ)
STD70N2LH5

STD70N2LH5

MOSFET N-CH 25V 48A DPAK

STMicroelectronics

2,095 -
STD70N2LH5

数据表

STripFET™ V TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 48A (Tc) 5V, 10V 7.1mOhm @ 24A, 10V Surface Mount 1V @ 250µA 8 nC @ 5 V 25 V ±22V 1300 pF @ 25 V - - DPAK - 60W (Tc) -55°C ~ 175°C (TJ)
IPP080N03L G

IPP080N03L G

MOSFET N-CH 30V 50A TO220-3

Infineon Technologies

2,776 -
IPP080N03L G

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 8mOhm @ 30A, 10V Through Hole 2.2V @ 250µA 18 nC @ 10 V 30 V ±20V 1900 pF @ 15 V - - PG-TO220-3-1 - 47W (Tc) -55°C ~ 175°C (TJ)
NVMFS5C423NLWFT3G

NVMFS5C423NLWFT3G

MOSFET N-CH 40V 31A/150A 5DFN

onsemi

5,593 -
NVMFS5C423NLWFT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 31A (Ta), 150A (Tc) 4.5V, 10V 2mOhm @ 50A, 10V Surface Mount 2V @ 250µA 50 nC @ 10 V 40 V ±20V 3100 pF @ 20 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ)
DMT10H009SK3-13

DMT10H009SK3-13

MOSFET BVDSS: 61V~100V TO252 T&R

Diodes Incorporated

9,638 -
DMT10H009SK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 91A (Tc) 10V 9.1mOhm @ 20A, 10V Surface Mount 4V @ 250µA 34 nC @ 10 V 100 V ±20V 2028 pF @ 50 V - - TO-252 (DPAK) - 1.7W (Ta) -55°C ~ 150°C (TJ)
DMT10H9M9SK3-13

DMT10H9M9SK3-13

MOSFET BVDSS: 61V~100V TO252 T&R

Diodes Incorporated

5,411 -
DMT10H9M9SK3-13

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
DMT10H9M9LK3-13

DMT10H9M9LK3-13

MOSFET BVDSS: 61V~100V TO252 T&R

Diodes Incorporated

4,141 -
DMT10H9M9LK3-13

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
FQP3N40

FQP3N40

MOSFET N-CH 400V 2.5A TO220-3

onsemi

2,472 -
FQP3N40

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 3.4Ohm @ 1.25A, 10V Through Hole 5V @ 250µA 7.5 nC @ 10 V 400 V ±30V 230 pF @ 25 V - - TO-220-3 - 55W (Tc) -55°C ~ 150°C (TJ)
DMJ70H1D3SK3-13

DMJ70H1D3SK3-13

MOSFET BVDSS: 651V~800V TO252 T&

Diodes Incorporated

5,939 -
DMJ70H1D3SK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.7A (Tc) 10V 1.4Ohm @ 1A, 10V Surface Mount 5V @ 250µA 9.8 nC @ 10 V 700 V ±30V 264 pF @ 100 V - - TO-252 (DPAK) - 57W (Tc) -55°C ~ 150°C (TJ)
TPH3R506PL,LQ

TPH3R506PL,LQ

MOSFET N-CH 60V 94A 8SOP

Toshiba Semiconductor and Storage

4,278 -
TPH3R506PL,LQ

数据表

U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 94A (Tc) 4.5V, 10V 3.5mOhm @ 47A, 10V Surface Mount 2.5V @ 500µA 55 nC @ 10 V 60 V ±20V 4420 pF @ 30 V - - 8-SOP Advance (5x5) - 830mW (Ta), 116W (Tc) 175°C
BSH112,235

BSH112,235

MOSFET N-CH 60V 300MA TO236AB

NXP USA Inc.

9,573 -
BSH112,235

数据表

TrenchMOS™ TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 300mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V Surface Mount 2V @ 1mA - 60 V ±15V 40 pF @ 10 V - - SOT-23 (TO-236AB) - 830mW (Tc) -65°C ~ 150°C (TJ)
SI5404BDC-T1-E3

SI5404BDC-T1-E3

MOSFET N-CH 20V 5.4A 1206-8

Vishay Siliconix

9,031 -
SI5404BDC-T1-E3

数据表

TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.4A (Ta) 2.5V, 4.5V 28mOhm @ 5.4A, 4.5V Surface Mount 1.5V @ 250µA 11 nC @ 4.5 V 20 V ±12V - - - 1206-8 ChipFET™ - 1.3W (Ta) -55°C ~ 150°C (TJ)
共 36322 条记录«上一页1... 3334353637383940...1817下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户