富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SSM3K35MFV,L3F

SSM3K35MFV,L3F

MOSFET N-CH 20V 180MA VESM

Toshiba Semiconductor and Storage

6,818 -
SSM3K35MFV,L3F

数据表

- SOT-723 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 180mA (Ta) 1.2V, 4V 3Ohm @ 50mA, 4V Surface Mount 1V @ 1mA - 20 V ±10V 9.5 pF @ 3 V - - VESM - 150mW (Ta) 150°C
TPCC8093,L1Q

TPCC8093,L1Q

MOSFET N-CH 20V 21A 8TSON

Toshiba Semiconductor and Storage

6,672 -
TPCC8093,L1Q

数据表

U-MOSVII 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 21A (Ta) 2.5V, 4.5V 5.8mOhm @ 10.5A, 4.5V Surface Mount 1.2V @ 500µA 16 nC @ 5 V 20 V ±12V 1860 pF @ 10 V - - 8-TSON Advance (3.1x3.1) - 1.9W (Ta), 30W (Tc) 150°C
TPCP8J01(TE85L,F,M

TPCP8J01(TE85L,F,M

MOSFET P-CH 32V 5.5A PS-8

Toshiba Semiconductor and Storage

2,906 -
TPCP8J01(TE85L,F,M

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.5A (Ta) 4V, 10V 35mOhm @ 3A, 10V Surface Mount 2V @ 1mA 34 nC @ 10 V 32 V ±20V 1760 pF @ 10 V - - PS-8 - 2.14W (Ta) 150°C (TJ)
SSM3K15ACT(TPL3)

SSM3K15ACT(TPL3)

MOSFET N-CH 30V 100MA CST3

Toshiba Semiconductor and Storage

3,038 -
SSM3K15ACT(TPL3)

数据表

U-MOSIII SC-101, SOT-883 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100mA (Ta) 2.5V, 4V 3.6Ohm @ 10mA, 4V Surface Mount 1.5V @ 100µA - 30 V ±20V 13.5 pF @ 3 V - - CST3 - 100mW (Ta) 150°C (TJ)
TK12P60W,RVQ(S

TK12P60W,RVQ(S

MOSFET N-CH 600V 11.5A DPAK

Toshiba Semiconductor and Storage

3,909 -
TK12P60W,RVQ(S

数据表

DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11.5A (Ta) 10V 340mOhm @ 5.8A, 10V Surface Mount 3.7V @ 600µA 25 nC @ 10 V 600 V ±30V 890 pF @ 300 V - - DPAK - 100W (Tc) 150°C
TK1P90A,LQ(CO

TK1P90A,LQ(CO

MOSFET N-CH 900V 1A PW-MOLD

Toshiba Semiconductor and Storage

3,853 -
TK1P90A,LQ(CO

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1A (Ta) 10V 9Ohm @ 500mA, 10V Surface Mount 4V @ 1mA 13 nC @ 10 V 900 V ±30V 320 pF @ 25 V - - PW-MOLD - 20W (Tc) 150°C
TK2P60D(TE16L1,NV)

TK2P60D(TE16L1,NV)

MOSFET N-CH 600V 2A PW-MOLD

Toshiba Semiconductor and Storage

5,540 -
TK2P60D(TE16L1,NV)

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V 4.3Ohm @ 1A, 10V Surface Mount 4.4V @ 1mA 7 nC @ 10 V 600 V ±30V 280 pF @ 25 V - - PW-MOLD - 60W (Tc) 150°C
TPCF8A01(TE85L)

TPCF8A01(TE85L)

MOSFET N-CH 20V 3A VS-8

Toshiba Semiconductor and Storage

4,654 -
TPCF8A01(TE85L)

数据表

U-MOSIII 8-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3A (Ta) 2V, 4.5V 49mOhm @ 1.5A, 4.5V Surface Mount 1.2V @ 200µA 7.5 nC @ 5 V 20 V ±12V 590 pF @ 10 V - Schottky Diode (Isolated) VS-8 (2.9x1.5) - 330mW (Ta) 150°C (TJ)
SSM3K15CT(TPL3)

SSM3K15CT(TPL3)

MOSFET N-CH 30V 100MA CST3

Toshiba Semiconductor and Storage

2,369 -
SSM3K15CT(TPL3)

数据表

π-MOSVI SC-101, SOT-883 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100mA (Ta) 2.5V, 4V 4Ohm @ 10mA, 4V Surface Mount 1.5V @ 100µA - 30 V ±20V 7.8 pF @ 3 V - - CST3 - 100mW (Ta) 150°C (TJ)
SSM5G10TU(TE85L,F)

SSM5G10TU(TE85L,F)

MOSFET P-CH 20V 1.5A UFV

Toshiba Semiconductor and Storage

40 -
SSM5G10TU(TE85L,F)

数据表

U-MOSIII 6-SMD (5 Leads), Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.5A (Ta) 1.8V, 4V 213mOhm @ 1A, 4V Surface Mount 1V @ 1mA 6.4 nC @ 4 V 20 V ±8V 250 pF @ 10 V - Schottky Diode (Isolated) UFV - 500mW (Ta) 150°C (TJ)
共 814 条记录«上一页1... 777879808182下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户