| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SSM3K35MFV,L3FMOSFET N-CH 20V 180MA VESM Toshiba Semiconductor and Storage |
6,818 | - |
|
数据表 |
- | SOT-723 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 180mA (Ta) | 1.2V, 4V | 3Ohm @ 50mA, 4V | Surface Mount | 1V @ 1mA | - | 20 V | ±10V | 9.5 pF @ 3 V | - | - | VESM | - | 150mW (Ta) | 150°C |
|
TPCC8093,L1QMOSFET N-CH 20V 21A 8TSON Toshiba Semiconductor and Storage |
6,672 | - |
|
数据表 |
U-MOSVII | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 21A (Ta) | 2.5V, 4.5V | 5.8mOhm @ 10.5A, 4.5V | Surface Mount | 1.2V @ 500µA | 16 nC @ 5 V | 20 V | ±12V | 1860 pF @ 10 V | - | - | 8-TSON Advance (3.1x3.1) | - | 1.9W (Ta), 30W (Tc) | 150°C |
|
TPCP8J01(TE85L,F,MMOSFET P-CH 32V 5.5A PS-8 Toshiba Semiconductor and Storage |
2,906 | - |
|
数据表 |
- | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.5A (Ta) | 4V, 10V | 35mOhm @ 3A, 10V | Surface Mount | 2V @ 1mA | 34 nC @ 10 V | 32 V | ±20V | 1760 pF @ 10 V | - | - | PS-8 | - | 2.14W (Ta) | 150°C (TJ) |
|
SSM3K15ACT(TPL3)MOSFET N-CH 30V 100MA CST3 Toshiba Semiconductor and Storage |
3,038 | - |
|
数据表 |
U-MOSIII | SC-101, SOT-883 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | Surface Mount | 1.5V @ 100µA | - | 30 V | ±20V | 13.5 pF @ 3 V | - | - | CST3 | - | 100mW (Ta) | 150°C (TJ) |
|
TK12P60W,RVQ(SMOSFET N-CH 600V 11.5A DPAK Toshiba Semiconductor and Storage |
3,909 | - |
|
数据表 |
DTMOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 11.5A (Ta) | 10V | 340mOhm @ 5.8A, 10V | Surface Mount | 3.7V @ 600µA | 25 nC @ 10 V | 600 V | ±30V | 890 pF @ 300 V | - | - | DPAK | - | 100W (Tc) | 150°C |
|
TK1P90A,LQ(COMOSFET N-CH 900V 1A PW-MOLD Toshiba Semiconductor and Storage |
3,853 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1A (Ta) | 10V | 9Ohm @ 500mA, 10V | Surface Mount | 4V @ 1mA | 13 nC @ 10 V | 900 V | ±30V | 320 pF @ 25 V | - | - | PW-MOLD | - | 20W (Tc) | 150°C |
|
TK2P60D(TE16L1,NV)MOSFET N-CH 600V 2A PW-MOLD Toshiba Semiconductor and Storage |
5,540 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 2A (Ta) | 10V | 4.3Ohm @ 1A, 10V | Surface Mount | 4.4V @ 1mA | 7 nC @ 10 V | 600 V | ±30V | 280 pF @ 25 V | - | - | PW-MOLD | - | 60W (Tc) | 150°C |
|
TPCF8A01(TE85L)MOSFET N-CH 20V 3A VS-8 Toshiba Semiconductor and Storage |
4,654 | - |
|
数据表 |
U-MOSIII | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3A (Ta) | 2V, 4.5V | 49mOhm @ 1.5A, 4.5V | Surface Mount | 1.2V @ 200µA | 7.5 nC @ 5 V | 20 V | ±12V | 590 pF @ 10 V | - | Schottky Diode (Isolated) | VS-8 (2.9x1.5) | - | 330mW (Ta) | 150°C (TJ) |
|
SSM3K15CT(TPL3)MOSFET N-CH 30V 100MA CST3 Toshiba Semiconductor and Storage |
2,369 | - |
|
数据表 |
π-MOSVI | SC-101, SOT-883 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | Surface Mount | 1.5V @ 100µA | - | 30 V | ±20V | 7.8 pF @ 3 V | - | - | CST3 | - | 100mW (Ta) | 150°C (TJ) |
|
SSM5G10TU(TE85L,F)MOSFET P-CH 20V 1.5A UFV Toshiba Semiconductor and Storage |
40 | - |
|
数据表 |
U-MOSIII | 6-SMD (5 Leads), Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 1.5A (Ta) | 1.8V, 4V | 213mOhm @ 1A, 4V | Surface Mount | 1V @ 1mA | 6.4 nC @ 4 V | 20 V | ±8V | 250 pF @ 10 V | - | Schottky Diode (Isolated) | UFV | - | 500mW (Ta) | 150°C (TJ) |