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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SIDR608DP-T1-RE3

SIDR608DP-T1-RE3

MOSFET N-CH 45V 51A/208A PPAK

Vishay Siliconix

6,000 -
SIDR608DP-T1-RE3

数据表

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 51A (Ta), 208A (Tc) 4.5V, 10V 1.2mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 167 nC @ 10 V 45 V +20V, -16V 8900 pF @ 20 V - - PowerPAK® SO-8DC - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
PJD25N04-AU_L2_000A1

PJD25N04-AU_L2_000A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

6,673 -
PJD25N04-AU_L2_000A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.9A (Ta), 21A (Tc) 4.5V, 10V 32mOhm @ 12A, 10V Surface Mount 2.5V @ 250µA 4.4 nC @ 4.5 V 40 V ±20V 425 pF @ 25 V AEC-Q101 - TO-252AA Automotive 2.4W (Ta), 30W (Tc) -55°C ~ 175°C (TJ)
NTMFS4C810NAT3G

NTMFS4C810NAT3G

TRENCH 6 30V NCH

onsemi

6,315 -
NTMFS4C810NAT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.2A (Ta), 46A (Tc) 4.5V, 10V 5.88mOhm @ 30A, 10V Surface Mount 2.2V @ 250µA 18.6 nC @ 10 V 30 V ±20V 987 pF @ 15 V - - 5-DFN (5x6) (8-SOFL) - 750mW (Ta), 23.6W (Tc) -55°C ~ 150°C (TJ)
NTTFS6H888NTAG

NTTFS6H888NTAG

T8 80V U8FL

onsemi

9,556 -
NTTFS6H888NTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.7A (Ta), 12A (Tc) 6V, 10V 55mOhm @ 5A, 10V Surface Mount 4V @ 15µA 4.7 nC @ 10 V 80 V ±20V 220 pF @ 40 V - - 8-WDFN (3.3x3.3) - 2.9W (Ta), 18W (Tc) -55°C ~ 175°C (TJ)
TP0606N3-G-P002

TP0606N3-G-P002

MOSFET P-CH 60V 320MA TO92-3

Microchip Technology

2,835 -
TP0606N3-G-P002

数据表

- TO-226-3, TO-92-3 (TO-226AA) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 320mA (Tj) 5V, 10V 3.5Ohm @ 750mA, 10V Through Hole 2.4V @ 1mA - 60 V ±20V 150 pF @ 25 V - - TO-92-3 - 1W (Tc) -55°C ~ 150°C (TJ)
SUD25N04-25-E3

SUD25N04-25-E3

MOSFET N-CH 40V 25A TO252

Vishay Siliconix

7,507 -
SUD25N04-25-E3

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25A (Tc) 4.5V, 10V 25mOhm @ 25A, 10V Surface Mount 3V @ 250µA 20 nC @ 10 V 40 V ±20V 510 pF @ 25 V - - TO-252AA - 3W (Ta), 33W (Tc) -55°C ~ 175°C (TJ)
AONS420A70

AONS420A70

LINEAR IC

Alpha & Omega Semiconductor Inc.

3,033 -
AONS420A70

数据表

aMOS5™ 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Ta), 12A (Tc) 10V 420mOhm @ 6A, 10V Surface Mount 4.6V @ 250µA 21.5 nC @ 10 V 700 V ±20V 1360 pF @ 100 V - - 8-DFN-EP (5x6) - 4.2W (Ta), 183W (Tc) -55°C ~ 150°C (TJ)
HUF76437S3S

HUF76437S3S

MOSFET N-CH 60V 71A D2PAK

onsemi

6,642 -
HUF76437S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V Surface Mount 3V @ 250µA 71 nC @ 10 V 60 V ±16V 2230 pF @ 25 V - - TO-263 (D2PAK) - 155W (Tc) -55°C ~ 175°C (TJ)
PHP28NQ15T,127

PHP28NQ15T,127

MOSFET N-CH 150V 28.5A TO220AB

Nexperia USA Inc.

6,112 -
PHP28NQ15T,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 28.5A (Tj) 10V 65mOhm @ 18A, 10V Through Hole 4V @ 1mA 24 nC @ 10 V 150 V ±20V 1250 pF @ 30 V - - TO-220AB - 150W (Tc) -55°C ~ 175°C (TJ)
DMTH8003SPSWQ-13

DMTH8003SPSWQ-13

LINEAR IC

Diodes Incorporated

8,637 -
DMTH8003SPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 105A (Tc) 6V, 10V 3.9mOhm @ 30A, 10V Surface Mount, Wettable Flank 4V @ 250µA 136 nC @ 10 V 80 V ±20V 9081 pF @ 40 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 3.75W -55°C ~ 175°C (TJ)
DMT8003SPSWQ-13

DMT8003SPSWQ-13

LINEAR IC

Diodes Incorporated

6,847 -
DMT8003SPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 6V, 10V 3.9mOhm @ 30A, 10V Surface Mount, Wettable Flank 4V @ 250µA 136 nC @ 10 V 80 V ±20V 9081 pF @ 40 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 3.1W -55°C ~ 150°C (TJ)
FDP80N06

FDP80N06

MOSFET N-CH 60V 80A TO220-3

onsemi

6,324 -
FDP80N06

数据表

UniFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 10mOhm @ 40A, 10V Through Hole 4V @ 250µA 74 nC @ 10 V 60 V ±20V 3190 pF @ 25 V - - TO-220-3 - 176W (Tc) -55°C ~ 175°C (TJ)
IPA60R600C6XKSA1

IPA60R600C6XKSA1

MOSFET N-CH 600V 7.3A TO220-FP

Infineon Technologies

9,081 -
IPA60R600C6XKSA1

数据表

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V Through Hole 3.5V @ 200µA 20.5 nC @ 10 V 600 V ±20V 440 pF @ 100 V - - PG-TO220-FP - 28W (Tc) -55°C ~ 150°C (TJ)
IPI60R600CPAKSA1

IPI60R600CPAKSA1

MOSFET N-CH 600V 6.1A TO262-3

Infineon Technologies

8,432 -
IPI60R600CPAKSA1

数据表

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 6.1A (Tc) 10V 600mOhm @ 3.3A, 10V Through Hole 3.5V @ 220µA 27 nC @ 10 V 600 V ±20V 550 pF @ 100 V - - PG-TO262-3 - 60W (Tc) -55°C ~ 150°C (TJ)
STD9N80K5

STD9N80K5

MOSFET N-CHANNEL 800V 7A DPAK

STMicroelectronics

4,919 -
STD9N80K5

数据表

MDmesh™ K5 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 900mOhm @ 3.5A, 10V Surface Mount 5V @ 100µA 12 nC @ 10 V 800 V ±30V 340 pF @ 100 V - - DPAK - 110W (Tc) -55°C ~ 150°C (TJ)
IPA65R660CFDXKSA2

IPA65R660CFDXKSA2

MOSFET N-CH 700V 6A TO220

Infineon Technologies

5,299 -
IPA65R660CFDXKSA2

数据表

CoolMOS™ CFD2 TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 660mOhm @ 2.1A, 10V Through Hole 4.5V @ 200µA 22 nC @ 10 V 700 V ±20V 615 pF @ 100 V - - PG-TO220 Full Pack - 27.8W (Tc) -55°C ~ 150°C (TJ)
NTP13N10

NTP13N10

MOSFET N-CH 100V 13A TO220AB

onsemi

9,739 -
NTP13N10

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta) 10V 165mOhm @ 6.5A, 10V Through Hole 4V @ 250µA 20 nC @ 10 V 100 V ±20V 550 pF @ 25 V - - TO-220 - 64.7W (Tc) -55°C ~ 175°C (TJ)
NTP13N10G

NTP13N10G

MOSFET N-CH 100V 13A TO220AB

onsemi

6,796 -
NTP13N10G

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta) 10V 165mOhm @ 6.5A, 10V Through Hole 4V @ 250µA 20 nC @ 10 V 100 V ±20V 550 pF @ 25 V - - TO-220 - 64.7W (Tc) -55°C ~ 175°C (TJ)
FQP4N80

FQP4N80

MOSFET N-CH 800V 3.9A TO220-3

onsemi

2,766 -
FQP4N80

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.9A (Tc) 10V 3.6Ohm @ 1.95A, 10V Through Hole 5V @ 250µA 25 nC @ 10 V 800 V ±30V 880 pF @ 25 V - - TO-220-3 - 130W (Tc) -55°C ~ 150°C (TJ)
HUFA75637P3

HUFA75637P3

MOSFET N-CH 100V 44A TO220-3

onsemi

7,442 -
HUFA75637P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 44A (Tc) 10V 30mOhm @ 44A, 10V Through Hole 4V @ 250µA 108 nC @ 20 V 100 V ±20V 1700 pF @ 25 V - - TO-220-3 - 155W (Tc) -55°C ~ 175°C (TJ)
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