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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STN3PF06

STN3PF06

MOSFET P-CH 60V 2.5A SOT223

STMicroelectronics

8,674 -
STN3PF06

数据表

STripFET™ II TO-261-4, TO-261AA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 220mOhm @ 1.5A, 10V Surface Mount 4V @ 250µA 21 nC @ 10 V 60 V ±20V 850 pF @ 25 V - - SOT-223 - 2.5W (Tc) -65°C ~ 150°C (TJ)
FDD3N40TF

FDD3N40TF

MOSFET N-CH 400V 2A DPAK

onsemi

2,650 -
FDD3N40TF

数据表

UniFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 3.4Ohm @ 1A, 10V Surface Mount 5V @ 250µA 6 nC @ 10 V 400 V ±30V 225 pF @ 25 V - - TO-252AA - 30W (Tc) -55°C ~ 150°C (TJ)
IRF5803D2TRPBF

IRF5803D2TRPBF

MOSFET P-CH 40V 3.4A 8SO

Infineon Technologies

9,229 -
IRF5803D2TRPBF

数据表

FETKY™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.4A (Ta) 4.5V, 10V 112mOhm @ 3.4A, 10V Surface Mount 3V @ 250µA 37 nC @ 10 V 40 V ±20V 1110 pF @ 25 V - Schottky Diode (Isolated) 8-SO - 2W (Ta) -55°C ~ 150°C (TJ)
SI4660DY-T1-GE3

SI4660DY-T1-GE3

MOSFET N-CH 25V 23.1A 8SO

Vishay Siliconix

4,196 -
SI4660DY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 23.1A (Tc) 4.5V, 10V 5.8mOhm @ 15A, 10V Surface Mount 2.2V @ 250µA 45 nC @ 10 V 25 V ±16V 2410 pF @ 15 V - - 8-SOIC - 3.1W (Ta), 5.6W (Tc) -55°C ~ 150°C (TJ)
IQE004NE1LM7CGSCATMA1

IQE004NE1LM7CGSCATMA1

TRENCH <= 40V

Infineon Technologies

10,806 -
IQE004NE1LM7CGSCATMA1

数据表

OptiMOS™ 7 9-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 58A (Ta), 379A (Tc) 4.5V, 7V 0.45mOhm @ 30A, 7V Surface Mount 2V @ 432µA 55 nC @ 7 V 15 V ±7V 6240 pF @ 7.5 V - - PG-WHTFN-9 - 2.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ)
IQE022N06LM5ATMA1

IQE022N06LM5ATMA1

TRENCH 40<-<100V

Infineon Technologies

4,927 -
IQE022N06LM5ATMA1

数据表

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Ta), 151A (Tc) 4.5V, 10V 2.2mOhm @ 20A, 10V Surface Mount 2.3V @ 48µA 53 nC @ 10 V 60 V ±20V 4420 pF @ 30 V - - PG-TSON-8-5 - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ)
IQE022N06LM5CGATMA1

IQE022N06LM5CGATMA1

TRENCH 40<-<100V

Infineon Technologies

3,420 -
IQE022N06LM5CGATMA1

数据表

OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Ta), 151A (Tc) 4.5V, 10V 2.2mOhm @ 20A, 10V Surface Mount 2.3V @ 48µA 53 nC @ 10 V 60 V ±20V 4420 pF @ 30 V - - PG-TTFN-9-3 - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ)
FDZ371PZ

FDZ371PZ

MOSFET P-CH 20V 3.7A 4WLCSP

onsemi

7,295 -
FDZ371PZ

数据表

PowerTrench® 4-XFBGA, WLCSP Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.7A (Ta) 1.5V, 4.5V 75mOhm @ 2A, 4.5V Surface Mount 1V @ 250µA 17 nC @ 4.5 V 20 V ±8V 1000 pF @ 10 V - - 4-WLCSP (1x1) - 1.7W (Ta) -55°C ~ 150°C (TJ)
BSO080P03NS3EGXUMA1

BSO080P03NS3EGXUMA1

MOSFET P-CH 30V 12A 8DSO

Infineon Technologies

5,886 -
BSO080P03NS3EGXUMA1

数据表

OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12A (Ta) 6V, 10V 8mOhm @ 14.8A, 10V Surface Mount 3.1V @ 150µA 81 nC @ 10 V 30 V ±25V 6750 pF @ 15 V - - PG-DSO-8 - 1.6W (Ta) -55°C ~ 150°C (TJ)
AON6444

AON6444

MOSFET N-CH 60V 14A/81A 8DFN

Alpha & Omega Semiconductor Inc.

5,544 -
AON6444

数据表

SDMOS™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta), 81A (Tc) 4.5V, 10V 6.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 96 nC @ 10 V 60 V ±20V 5800 pF @ 30 V - - 8-DFN (5x6) - 2.3W (Ta), 83W (Tc) -55°C ~ 150°C (TJ)
NTMYS3D3N06CLTWG

NTMYS3D3N06CLTWG

MOSFET N-CH 60V 26A/133A LFPAK4

onsemi

1,485 -
NTMYS3D3N06CLTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 26A (Ta), 133A (Tc) 4.5V, 10V 3mOhm @ 50A, 10V Surface Mount 2V @ 250µA 40.7 nC @ 10 V 60 V ±20V 2880 pF @ 25 V - - LFPAK4 (5x6) - 3.9W (Ta), 100W (Tc) -55°C ~ 175°C (TJ)
IRFBF20STRLPBF

IRFBF20STRLPBF

MOSFET N-CH 900V 1.7A D2PAK

Vishay Siliconix

1,366 -
IRFBF20STRLPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.7A (Tc) 10V 8Ohm @ 1A, 10V Surface Mount 4V @ 250µA 38 nC @ 10 V 900 V ±20V 490 pF @ 25 V - - TO-263 (D2PAK) - 3.1W (Ta), 54W (Tc) -55°C ~ 150°C (TJ)
R6022YNXC7G

R6022YNXC7G

NCH 600V 13A, TO-220FM, POWER MO

Rohm Semiconductor

1,000 -
R6022YNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V, 12V 165mOhm @ 6.5A, 12V Through Hole 6V @ 1.8mA 33 nC @ 10 V 600 V ±30V 1400 pF @ 100 V - - TO-220FM - 65W (Tc) 150°C (TJ)
KFK9B0463ZLE

KFK9B0463ZLE

SINGLE NCH MOSFET 40V, 7.5A, 1MO

Nuvoton Technology Corporation

1,000 -
KFK9B0463ZLE

数据表

- 9-ULGA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7.5A (Ta) 4.5V, 10V 15mOhm @ 2A, 10V Surface Mount 3V @ 990µA 70 nC @ 10 V 40 V +20V, -10V 5000 pF @ 20 V AEC-Q101 - 9-LGA (3.05x3.05) Automotive 860mW (Ta) -55°C ~ 150°C (TJ)
IPB65R310CFDATMA2

IPB65R310CFDATMA2

MOSFET N-CH 650V 11.4A TO263-3

Infineon Technologies

933 -
IPB65R310CFDATMA2

数据表

CoolMOS™ CFD2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V Surface Mount 4.5V @ 400µA 41 nC @ 10 V 650 V ±20V 1100 pF @ 100 V - - PG-TO263-3 - 104.2W (Tc) -55°C ~ 150°C (TJ)
BUK9Y1R3-40HX

BUK9Y1R3-40HX

BUK9Y1R3-40H/SOT669/LFPAK

Nexperia USA Inc.

1,500 -
BUK9Y1R3-40HX

数据表

- - Tape & Reel (TR) Active - - 190A (Tc) - - - - - - +16V, -10V - AEC-Q101 - - Automotive 395W (Tc) -
NVMFS5C430NLWFAFT1G

NVMFS5C430NLWFAFT1G

MOSFET N-CH 40V 38A/200A 5DFN

onsemi

1,500 -
NVMFS5C430NLWFAFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 38A (Ta), 200A (Tc) 4.5V, 10V 1.4mOhm @ 50A, 10V Surface Mount, Wettable Flank 2V @ 250µA 70 nC @ 10 V 40 V ±20V 4300 pF @ 20 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ)
DI200N10D2

DI200N10D2

MOSFET D2PAK N 100V 200A

Diotec Semiconductor

247 -
DI200N10D2

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 200A (Tc) 10V 2.3mOhm @ 120A, 10V Surface Mount 4V @ 250µA 262 nC @ 10 V 100 V ±20V 16800 pF @ 50 V - - TO-263AB (D2PAK) - 340W (Tc) -55°C ~ 175°C (TJ)
IRF7413ZGTRPBF

IRF7413ZGTRPBF

MOSFET N-CH 30V 13A 8SO

Infineon Technologies

8,066 -
IRF7413ZGTRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta) 4.5V, 10V 10mOhm @ 13A, 10V Surface Mount 2.25V @ 25µA 14 nC @ 4.5 V 30 V ±20V 1210 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
TPW1500CNH,L1Q

TPW1500CNH,L1Q

PB-F POWER MOSFET TRANSISTOR DSO

Toshiba Semiconductor and Storage

6,746 -
TPW1500CNH,L1Q

数据表

U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 38A (Tc) 10V 15.4mOhm @ 19A, 10V Surface Mount 4V @ 1mA 22 nC @ 10 V 150 V ±20V 2200 pF @ 75 V - - 8-DSOP Advance - 800mW (Ta), 142W (Tc) 150°C
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