订单满￥1000免运费

富聪科技 | 全球电子元器件分销商

24小时咨询热线 0755 83957878

首页 > 产品 > 分立半导体产品 > 晶体管 > 场效应晶体管（FETs）、金属氧化物半导体场效应晶体管（MOSFETs） > 场效应晶体管（FETs）、MOSFETs

场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

全部重置

全部应用

结果

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
XPJ1R004PB,LXHQ 40V; UMOS9; MOSFET 1MOHM; L-TOGL Toshiba Semiconductor and Storage	2,975	-	询价单	数据表	-	5-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	160A (Ta)	6V, 10V	1mOhm @ 80A, 10V	Surface Mount	3V @ 500µA	84 nC @ 10 V	40 V	±20V	6890 pF @ 10 V	AEC-Q101	-	S-TOGL™	Automotive	223W (Tc)	175°C
XP10N3R8IT FET N-CH 100V 67.7A TO220CFM YAGEO XSEMI	1,000	-	询价单	数据表	XP10N3R8	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	67.7A (Ta)	10V	3.88mOhm @ 35A, 10V	Through Hole	4V @ 250µA	131 nC @ 10 V	100 V	±20V	6560 pF @ 80 V	-	-	TO-220CFM	-	1.92W (Ta), 32.8W (Tc)	-55°C ~ 150°C (TJ)
SIHP14N60E-BE3 N-CHANNEL 600V Vishay Siliconix	972	-	询价单	数据表	E	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	309mOhm @ 7A, 10V	Through Hole	4V @ 250µA	64 nC @ 10 V	600 V	±30V	1205 pF @ 100 V	-	-	TO-220AB	-	147W (Tc)	-55°C ~ 150°C (TJ)
TPW2R508NH,L1Q PB-F POWER MOSFET TRANSISTOR DOS Toshiba Semiconductor and Storage	10,902	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150A (Ta)	10V	2.5mOhm @ 50A, 10V	Surface Mount	4V @ 1mA	72 nC @ 10 V	75 V	±20V	6000 pF @ 37.5 V	-	-	8-DSOP Advance	-	800mW (Ta), 142W (Tc)	150°C
IRF3007STRLPBF MOSFET N CH 75V 62A D2PAK Infineon Technologies	3,095	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	62A (Tc)	10V	12.6mOhm @ 48A, 10V	Surface Mount	4V @ 250µA	130 nC @ 10 V	75 V	±20V	3270 pF @ 25 V	-	-	D2PAK	-	120W (Tc)	-55°C ~ 175°C (TJ)
NTMFS5C612NLT1G-UIL5 MOSFET N-CH 60V 36A/235A 5DFN onsemi	1,204	-	询价单	数据表	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	36A (Ta), 235A (Tc)	4.5V, 10V	1.5mOhm @ 50A, 10V	Surface Mount	2V @ 250µA	91 nC @ 10 V	60 V	±20V	6660 pF @ 25 V	-	-	5-DFN (5x6) (8-SOFL)	-	3.8W (Ta), 167W (Tc)	-55°C ~ 175°C (TJ)
SIR872ADP-T1-RE3 MOSFET N-CH 150V 53.7A PPAK SO-8 Vishay Siliconix	2,901	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	53.7A (Tc)	7.5V, 10V	18mOhm @ 20A, 10V	Surface Mount	4.5V @ 250µA	47 nC @ 10 V	150 V	±20V	1286 pF @ 75 V	-	-	PowerPAK® SO-8	-	104W (Tc)	-55°C ~ 150°C (TJ)
NVMFS6H801NLWFT1G MOSFET N-CH 80V 24A/160A 5DFN onsemi	1,400	-	询价单	数据表	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	24A (Ta), 160A (Tc)	4.5V, 10V	2.7mOhm @ 50A, 10V	Surface Mount, Wettable Flank	2V @ 250µA	90 nC @ 10 V	80 V	±20V	5126 pF @ 40 V	AEC-Q101	-	5-DFNW (4.9x5.9) (8-SOFL-WF)	Automotive	3.8W (Ta), 167W (Tc)	-55°C ~ 175°C (TJ)
NTMFS0D5N04XMT1G 40V T10M IN S08FL HEFET GEN 2 PA onsemi	1,255	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	414A (Tc)	10V	0.52mOhm @ 50A, 10V	Surface Mount	3.5V @ 240µA	97.5 nC @ 10 V	40 V	±20V	6267 pF @ 20 V	-	-	8-DFN (5x6)	-	163W (Tc)	-55°C ~ 175°C (TJ)
IPB80N06S209ATMA2 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	777	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	8.8mOhm @ 50A, 10V	Surface Mount	4V @ 125µA	80 nC @ 10 V	55 V	±20V	2360 pF @ 25 V	-	-	PG-TO263-3-2	-	190W (Tc)	-55°C ~ 175°C (TJ)
IPA65R310CFDXKSA2 MOSFET N-CH 650V 11.4A TO220 Infineon Technologies	536	-	询价单	数据表	CoolMOS™ CFD2	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11.4A (Tc)	10V	310mOhm @ 4.4A, 10V	Through Hole	4.5V @ 400µA	41 nC @ 10 V	650 V	±20V	1100 pF @ 100 V	-	-	PG-TO220-FP	-	32W (Tc)	-55°C ~ 150°C (TJ)
IPP65R310CFDXKSA2 MOSFET N-CH 650V 11.4A TO220-3 Infineon Technologies	500	-	询价单	数据表	CoolMOS™ CFD2	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11.4A (Tc)	10V	310mOhm @ 4.4A, 10V	Through Hole	4.5V @ 400µA	41 nC @ 10 V	650 V	±20V	1100 pF @ 100 V	-	-	PG-TO220-3	-	104.2W (Tc)	-55°C ~ 150°C (TJ)
IPI60R190C6XKSA1 MOSFET N-CH 600V 20.2A TO262-3 Infineon Technologies	495	-	询价单	数据表	CoolMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20.2A (Tc)	10V	190mOhm @ 9.5A, 10V	Through Hole	3.5V @ 630µA	63 nC @ 10 V	600 V	±20V	1400 pF @ 100 V	-	-	PG-TO262-3	-	151W (Tc)	-55°C ~ 150°C (TJ)
PJD60N04S-AU_L2_002A1 40V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	2,840	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	22.5A (Ta), 140A (Tc)	4.5V, 10V	3.3mOhm @ 20A, 10V	Surface Mount	2.3V @ 50µA	41 nC @ 10 V	40 V	±20V	2862 pF @ 25 V	AEC-Q101	-	TO-252AA	Automotive	3W (Ta), 115W (Tc)	-55°C ~ 175°C (TJ)
STI20N65M5 MOSFET N-CH 650V 18A I2PAK STMicroelectronics	1,000	-	询价单	数据表	MDmesh™ V	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	190mOhm @ 9A, 10V	Through Hole	5V @ 250µA	36 nC @ 10 V	650 V	±25V	1434 pF @ 100 V	-	-	TO-262 (I2PAK)	-	130W (Tc)	-55°C ~ 150°C (TJ)
MCP70N15YA-BP N-CHANNEL MOSFET,TO-220AB(H) Micro Commercial Co	4,994	-	询价单	数据表	-	TO-220-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	10V	21mOhm @ 35A, 10V	Through Hole	5V @ 250µA	38 nC @ 10 V	150 V	±20V	2511 pF @ 75 V	-	-	TO-220AB (H)	-	136W (Tj)	-55°C ~ 175°C (TJ)
MCGWF20P06YHE3-TP POWER MOSFET Micro Commercial Co	3,400	-	询价单	数据表	-	8-PowerWDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20A (Tc)	4.5V, 10V	26mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	25 nC @ 10 V	60 V	±20V	1483 pF @ 25 V	AEC-Q101	-	DFN3333-8	Automotive	39W (Tj)	-55°C ~ 150°C (TJ)
PSMP032N08NS1_T0_00601 80V/ 3.4MOHM / TJMAX 175C MV MOS Panjit International Inc.	1,966	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	166A (Tc)	7V, 10V	3.4mOhm @ 50A, 10V	Through Hole	3.75V @ 250µA	76 nC @ 7 V	80 V	±20V	7430 pF @ 40 V	-	-	TO-220AB-L	-	156W (Tc)	-55°C ~ 175°C (TJ)
IPU95R450P7AKMA1 MOSFET N-CH 950V 14A TO251-3 Infineon Technologies	1,500	-	询价单	数据表	CoolMOS™ P7	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	10V	450mOhm @ 7.2A, 10V	Through Hole	3.5V @ 360µA	35 nC @ 10 V	950 V	±20V	1053 pF @ 400 V	-	-	PG-TO251-3	-	104W (Tc)	-55°C ~ 150°C (TJ)
IPP076N15N5XKSA1 TRENCH >=100V Infineon Technologies	500	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	112A (Tc)	8V, 10V	7.6mOhm @ 56A, 10V	Through Hole	4.6V @ 160µA	61 nC @ 10 V	150 V	±20V	4700 pF @ 75 V	-	-	PG-TO220-3-1	-	214W (Tc)	-55°C ~ 175°C (TJ)

共 36322 条记录«上一页 1... 297 298 299 300301302 303 304...1817 下一页»

搜索

产品

电话

用户

[email protected]

0755 83957878