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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXTH250N075T

IXTH250N075T

MOSFET N-CH 75V 250A TO247

IXYS

2,058 -
IXTH250N075T

数据表

TrenchMV™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 250A (Tc) 10V 4mOhm @ 50A, 10V Through Hole 4V @ 250µA 200 nC @ 10 V 75 V ±20V 9900 pF @ 25 V - - TO-247 (IXTH) - 550W (Tc) -55°C ~ 175°C (TJ)
IXTH280N055T

IXTH280N055T

MOSFET N-CH 55V 280A TO247

IXYS

6,636 -
IXTH280N055T

数据表

TrenchMV™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 280A (Tc) 10V 3.2mOhm @ 50A, 10V Through Hole 4V @ 250µA 200 nC @ 10 V 55 V ±20V 9700 pF @ 25 V - - TO-247 (IXTH) - 550W (Tc) -55°C ~ 175°C (TJ)
IXTP152N085T

IXTP152N085T

MOSFET N-CH 85V 152A TO220AB

IXYS

9,007 -
IXTP152N085T

数据表

TrenchMV™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 152A (Tc) 10V 7mOhm @ 25A, 10V Through Hole 4V @ 250µA 114 nC @ 10 V 85 V ±20V 5500 pF @ 25 V - - TO-220-3 - 360W (Tc) -55°C ~ 175°C (TJ)
IXTP160N075T

IXTP160N075T

MOSFET N-CH 75V 160A TO220AB

IXYS

7,126 -
IXTP160N075T

数据表

TrenchMV™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 160A (Tc) 10V 6mOhm @ 25A, 10V Through Hole 4V @ 250µA 112 nC @ 10 V 75 V ±20V 4950 pF @ 25 V - - TO-220-3 - 360W (Tc) -55°C ~ 175°C (TJ)
IXTP160N085T

IXTP160N085T

MOSFET N-CH 85V 160A TO220AB

IXYS

6,609 -
IXTP160N085T

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 160A (Tc) 10V 6mOhm @ 50A, 10V Through Hole 4V @ 1mA 164 nC @ 10 V 85 V ±20V 6400 pF @ 25 V - - TO-220-3 - 360W (Tc) -55°C ~ 175°C (TJ)
IXTP180N055T

IXTP180N055T

MOSFET N-CH 55V 180A TO220AB

IXYS

9,667 -
IXTP180N055T

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 180A (Tc) - - Through Hole 4V @ 1mA - 55 V - - - - TO-220-3 - - -
IXTP180N085T

IXTP180N085T

MOSFET N-CH 85V 180A TO220AB

IXYS

2,509 -
IXTP180N085T

数据表

TrenchMV™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 5.5mOhm @ 25A, 10V Through Hole 4V @ 250µA 170 nC @ 10 V 85 V ±20V 7500 pF @ 25 V - - TO-220-3 - 430W (Tc) -55°C ~ 175°C (TJ)
IXTP182N055T

IXTP182N055T

MOSFET N-CH 55V 182A TO220AB

IXYS

5,545 -
IXTP182N055T

数据表

TrenchMV™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 182A (Tc) 10V 5mOhm @ 25A, 10V Through Hole 4V @ 250µA 114 nC @ 10 V 55 V ±20V 4850 pF @ 25 V - - TO-220-3 - 360W (Tc) -55°C ~ 175°C (TJ)
IXTP200N075T

IXTP200N075T

MOSFET N-CH 75V 200A TO220AB

IXYS

2,200 -
IXTP200N075T

数据表

TrenchMV™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200A (Tc) 10V 5mOhm @ 25A, 10V Through Hole 4V @ 250µA 160 nC @ 10 V 75 V ±20V 6800 pF @ 25 V - - TO-220-3 - 430W (Tc) -55°C ~ 175°C (TJ)
IXTP200N085T

IXTP200N085T

MOSFET N-CH 85V 200A TO220AB

IXYS

8,364 -
IXTP200N085T

数据表

TrenchMV™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200A (Tc) 10V 5mOhm @ 25A, 10V Through Hole 4V @ 250µA 152 nC @ 10 V 85 V ±20V 7600 pF @ 25 V - - TO-220-3 - 480W (Tc) -55°C ~ 175°C (TJ)
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