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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXTQ250N075T

IXTQ250N075T

MOSFET N-CH 75V 250A TO3P

IXYS

4,116 -
IXTQ250N075T

数据表

TrenchMV™ TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 250A (Tc) 10V 4mOhm @ 50A, 10V Through Hole 4V @ 250µA 200 nC @ 10 V 75 V ±20V 9900 pF @ 25 V - - TO-3P - 550W (Tc) -55°C ~ 175°C (TJ)
IXTQ280N055T

IXTQ280N055T

MOSFET N-CH 55V 280A TO3P

IXYS

6,051 -
IXTQ280N055T

数据表

TrenchMV™ TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 280A (Tc) 10V 3.2mOhm @ 50A, 10V Through Hole 4V @ 250µA 200 nC @ 10 V 55 V ±20V 9700 pF @ 25 V - - TO-3P - 550W (Tc) -55°C ~ 175°C (TJ)
IXTT10P50

IXTT10P50

MOSFET P-CH 500V 10A TO268

IXYS

7,906 -
IXTT10P50

数据表

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Box Active P-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 900mOhm @ 5A, 10V Surface Mount 5V @ 250µA 160 nC @ 10 V 500 V ±20V 4700 pF @ 25 V - - TO-268AA - 300W (Tc) -55°C ~ 150°C (TJ)
IXTT20N50D

IXTT20N50D

MOSFET N-CH 500V 20A TO268

IXYS

3,380 -
IXTT20N50D

数据表

Depletion TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 20A (Tc) 10V 330mOhm @ 10A, 10V Surface Mount 3.5V @ 250mA 125 nC @ 10 V 500 V ±30V 2500 pF @ 25 V - - TO-268AA - 400W (Tc) -55°C ~ 150°C (TJ)
IXTU01N100D

IXTU01N100D

MOSFET N-CH 1000V 400MA TO251

IXYS

7,180 -
IXTU01N100D

数据表

Depletion TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 400mA (Tc) 0V 80Ohm @ 50mA, 0V Through Hole 4.5V @ 25µA 5.8 nC @ 5 V 1000 V ±20V 100 pF @ 25 V - - TO-251AA - 1.1W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
IXTU64N055T

IXTU64N055T

MOSFET N-CH 55V 64A TO251

IXYS

7,760 -
IXTU64N055T

数据表

Trench TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 64A (Tc) - - Through Hole 4V @ 25µA - 55 V - - - - TO-251AA - - -
IXTV200N10T

IXTV200N10T

MOSFET N-CH 100V 200A PLUS220

IXYS

7,263 -
IXTV200N10T

数据表

TrenchMV™ TO-220-3, Short Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 200A (Tc) 10V 5.5mOhm @ 50A, 10V Through Hole 4.5V @ 250µA 152 nC @ 10 V 100 V ±30V 9400 pF @ 25 V - - PLUS220 - 550W (Tc) -55°C ~ 175°C (TJ)
IXTV230N085T

IXTV230N085T

MOSFET N-CH 85V 230A PLUS220

IXYS

3,034 -
IXTV230N085T

数据表

TrenchMV™ TO-220-3, Short Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 230A (Tc) 10V 4.4mOhm @ 50A, 10V Through Hole 4V @ 250µA 187 nC @ 10 V 85 V ±20V 9900 pF @ 25 V - - PLUS220 - 550W (Tc) -55°C ~ 175°C (TJ)
IXTY2N80P

IXTY2N80P

MOSFET N-CH 800V 2A TO252

IXYS

7,380 -
IXTY2N80P

数据表

PolarHV™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 6Ohm @ 1A, 10V Surface Mount 5.5V @ 50µA 10.6 nC @ 10 V 800 V ±30V 440 pF @ 25 V - - TO-252AA - 70W (Tc) -55°C ~ 150°C (TJ)
IXTY50N085T

IXTY50N085T

MOSFET N-CH 85V 50A TO252

IXYS

9,798 -
IXTY50N085T

数据表

TrenchMV™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 23mOhm @ 25A, 10V Surface Mount 4V @ 25µA 34 nC @ 10 V 85 V ±20V 1460 pF @ 25 V - - TO-252AA - 130W (Tc) -55°C ~ 175°C (TJ)
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