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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXFQ28N60P3

IXFQ28N60P3

MOSFET N-CH 600V 28A TO3P

IXYS

63 -
IXFQ28N60P3

数据表

HiPerFET™, Polar3™ TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 260mOhm @ 14A, 10V Through Hole 5V @ 2.5mA 50 nC @ 10 V 600 V ±30V 3560 pF @ 25 V - - TO-3P - 695W (Tc) -55°C ~ 150°C (TJ)
IXTA8N50P

IXTA8N50P

MOSFET N-CH 500V 8A TO263

IXYS

9,151 -
IXTA8N50P

数据表

PolarHV™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 800mOhm @ 4A, 10V Surface Mount 5.5V @ 100µA 20 nC @ 10 V 500 V ±30V 1050 pF @ 25 V - - TO-263AA - 150W (Tc) -55°C ~ 150°C (TJ)
IXFH50N50P3

IXFH50N50P3

MOSFET N-CH 500V 50A TO247AD

IXYS

76 -
IXFH50N50P3

数据表

HiPerFET™, Polar3™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 120mOhm @ 25A, 10V Through Hole 5V @ 4mA 85 nC @ 10 V 500 V ±30V 4335 pF @ 25 V - - TO-247AD (IXFH) - 960W (Tc) -55°C ~ 150°C (TJ)
MMIX1F420N10T

MMIX1F420N10T

MOSFET N-CH 100V 334A 24SMPD

IXYS

60 -
MMIX1F420N10T

数据表

GigaMOS™, HiPerFET™, TrenchT2™ 24-PowerSMD, 21 Leads Tube Active N-Channel MOSFET (Metal Oxide) 334A (Tc) 10V 2.6mOhm @ 60A, 10V Surface Mount 5V @ 8mA 670 nC @ 10 V 100 V ±20V 4700 pF @ 10 V - - 24-SMPD - 680W (Tc) -55°C ~ 175°C (TJ)
IXFN70N120SK

IXFN70N120SK

SICFET N-CH 1200V 68A SOT227B

IXYS

10 -
IXFN70N120SK

数据表

- SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 68A (Tc) 20V 34mOhm @ 50A, 20V Chassis Mount 4V @ 15mA 161 nC @ 20 V 1200 V +20V, -5V 2790 pF @ 1000 V - - SOT-227B - - -40°C ~ 175°C (TJ)
IXTP02N50D

IXTP02N50D

MOSFET N-CH 500V 200MA TO220AB

IXYS

32 -
IXTP02N50D

数据表

Depletion TO-220-3 Tube Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 200mA (Tc) 10V 30Ohm @ 50mA, 0V Through Hole 5V @ 25µA - 500 V ±20V 120 pF @ 25 V - - TO-220-3 - 1.1W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
IXFY8N65X2

IXFY8N65X2

MOSFET N-CH 650V 8A TO252AA

IXYS

50 -
IXFY8N65X2

数据表

HiPerFET™, Ultra X2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 450mOhm @ 4A, 10V Surface Mount 5V @ 250µA 11 nC @ 10 V 650 V ±30V 790 pF @ 25 V - - TO-252AA - 150W (Tc) -55°C ~ 150°C (TJ)
IXTU8N70X2

IXTU8N70X2

MOSFET N-CH 700V 8A TO251-3

IXYS

64 -
IXTU8N70X2

数据表

Ultra X2 TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 500mOhm @ 500mA, 10V Through Hole 4.5V @ 250µA 12 nC @ 10 V 700 V ±30V 800 pF @ 10 V - - TO-251-3 - 150W (Tc) -55°C ~ 150°C (TJ)
IXTP8N70X2

IXTP8N70X2

MOSFET N-CH 700V 8A TO220-3

IXYS

28 -
IXTP8N70X2

数据表

Ultra X2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 500mOhm @ 500mA, 10V Through Hole 5V @ 250µA 12 nC @ 10 V 700 V ±30V 800 pF @ 10 V - - TO-220-3 - 150W (Tc) -55°C ~ 150°C (TJ)
IXFP20N50P3M

IXFP20N50P3M

MOSFET N-CH 500V 8A TO220AB

IXYS

57 -
IXFP20N50P3M

数据表

HiPerFET™, Polar3™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 300mOhm @ 10A, 10V Through Hole 5V @ 1.5mA 36 nC @ 10 V 500 V ±30V 1800 pF @ 25 V - - TO-220-3 - 58W (Tc) -55°C ~ 150°C (TJ)
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