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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXFC12N80P

IXFC12N80P

MOSFET N-CH 800V 7A ISOPLUS220

IXYS

2,194 -
IXFC12N80P

数据表

HiPerFET™, PolarHT™ ISOPLUS220™ Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 930mOhm @ 6A, 10V Through Hole 5.5V @ 2.5mA 51 nC @ 10 V 800 V ±30V 2800 pF @ 25 V - - ISOPLUS220™ - 120W (Tc) -55°C ~ 150°C (TJ)
IXFA12N50P

IXFA12N50P

MOSFET N-CH 500V 12A TO263

IXYS

298 -
IXFA12N50P

数据表

HiPerFET™, Polar TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 500mOhm @ 6A, 10V Surface Mount 5.5V @ 1mA 29 nC @ 10 V 500 V ±30V 1830 pF @ 25 V - - TO-263AA (IXFA) - 200W (Tc) -55°C ~ 150°C (TJ)
IXFA4N85X

IXFA4N85X

MOSFET N-CH 850V 3.5A TO263

IXYS

300 -
IXFA4N85X

数据表

HiPerFET™, Ultra X TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 3.5A (Tc) 10V 2.5Ohm @ 2A, 10V Surface Mount 5.5V @ 250µA 7 nC @ 10 V 850 V ±30V 247 pF @ 25 V - - TO-263 (IXFA) - 150W (Tc) -55°C ~ 150°C (TJ)
IXTQ102N20T

IXTQ102N20T

MOSFET N-CH 200V 102A TO3P

IXYS

7,650 -
IXTQ102N20T

数据表

Trench TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 102A (Tc) - 23mOhm @ 500mA, 10V Through Hole 4.5V @ 1mA 114 nC @ 10 V 200 V - 6800 pF @ 25 V - - TO-3P - 750W (Tc) -55°C ~ 175°C (TJ)
IXTQ130N15T

IXTQ130N15T

MOSFET N-CH 150V 130A TO3P

IXYS

4,127 -
IXTQ130N15T

数据表

Trench TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 130A (Tc) 10V 12mOhm @ 65A, 10V Through Hole 4.5V @ 1mA 113 nC @ 10 V 150 V ±30V 9800 pF @ 25 V - - TO-3P - 750W (Tc) -55°C ~ 175°C (TJ)
IRFP450

IRFP450

MOSFET N-CH 500V 14A TO247AD

IXYS

8,311 -
IRFP450

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 400mOhm @ 8.4A, 10V Through Hole 4V @ 250µA 150 nC @ 10 V 500 V ±20V 2800 pF @ 25 V - - TO-247AD - 190W (Tc) -55°C ~ 150°C (TJ)
IXTH102N20T

IXTH102N20T

MOSFET N-CH 200V 102A TO247

IXYS

9,284 -
IXTH102N20T

数据表

Trench TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 102A (Tc) 10V 23mOhm @ 500mA, 10V Through Hole 4.5V @ 1mA 114 nC @ 10 V 200 V ±30V 6800 pF @ 25 V - - TO-247 (IXTH) - 750W (Tc) -55°C ~ 175°C (TJ)
IXTH130N15T

IXTH130N15T

MOSFET N-CH 150V 130A TO247

IXYS

3,488 -
IXTH130N15T

数据表

Trench TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 130A (Tc) 10V 12mOhm @ 65A, 10V Through Hole 4.5V @ 1mA 113 nC @ 10 V 150 V ±30V 9800 pF @ 25 V - - TO-247 (IXTH) - 750W (Tc) -55°C ~ 175°C (TJ)
IXTV96N25T

IXTV96N25T

MOSFET N-CH 250V 96A PLUS220

IXYS

3,588 -
IXTV96N25T

数据表

Trench TO-220-3, Short Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 96A (Tc) 10V 29mOhm @ 500mA, 10V Through Hole 5V @ 1mA 114 nC @ 10 V 250 V ±30V 6100 pF @ 25 V - - PLUS220 - 625W (Tc) -55°C ~ 150°C (TJ)
IXFH13N50

IXFH13N50

MOSFET N-CH 500V 13A TO247AD

IXYS

6,890 -
IXFH13N50

数据表

HiPerFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 400mOhm @ 6.5A, 10V Through Hole 4V @ 2.5mA 120 nC @ 10 V 500 V ±20V 2800 pF @ 25 V - - TO-247AD (IXFH) - 180W (Tc) -55°C ~ 150°C (TJ)
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