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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXTQ102N15T

IXTQ102N15T

MOSFET N-CH 150V 102A TO3P

IXYS

4,005 -
IXTQ102N15T

数据表

- TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 102A (Tc) 10V 18mOhm @ 500mA, 10V Through Hole 5V @ 1mA 87 nC @ 10 V 150 V ±20V 5220 pF @ 25 V - - TO-3P - 455W (Tc) -55°C ~ 175°C (TJ)
IXTH1N100

IXTH1N100

MOSFET N-CH 1000V 1.5A TO247

IXYS

3,588 -
IXTH1N100

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.5A (Tc) 10V 11Ohm @ 1A, 10V Through Hole 4.5V @ 25µA 23 nC @ 10 V 1000 V ±20V 480 pF @ 25 V - - TO-247 (IXTH) - 60W (Tc) -55°C ~ 150°C (TJ)
IXFC10N80P

IXFC10N80P

MOSFET N-CH 800V 5A ISOPLUS220

IXYS

6,353 -
IXFC10N80P

数据表

PolarHV™ ISOPLUS220™ Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) - - Through Hole - - 800 V - - - - ISOPLUS220™ - - -
IXFP3N80

IXFP3N80

MOSFET N-CH 800V 3.6A TO220AB

IXYS

7,824 -
IXFP3N80

数据表

HiPerFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 3.6Ohm @ 500mA, 10V Through Hole 4.5V @ 1mA 24 nC @ 10 V 800 V ±20V 685 pF @ 25 V - - TO-220-3 - 100W (Tc) -55°C ~ 150°C (TJ)
IXFC16N50P

IXFC16N50P

MOSFET N-CH 500V 10A ISOPLUS220

IXYS

3,120 -
IXFC16N50P

数据表

HiPerFET™, PolarHT™ ISOPLUS220™ Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 450mOhm @ 8A, 10V Through Hole 5.5V @ 2.5mA 43 nC @ 10 V 500 V ±30V 2250 pF @ 25 V - - ISOPLUS220™ - 125W (Tc) -55°C ~ 150°C (TJ)
IXFC14N60P

IXFC14N60P

MOSFET N-CH 600V 8A ISOPLUS220

IXYS

3,690 -
IXFC14N60P

数据表

HiPerFET™, PolarHT™ ISOPLUS220™ Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 630mOhm @ 7A, 10V Through Hole 5.5V @ 2.5mA 36 nC @ 10 V 600 V ±30V 2500 pF @ 25 V - - ISOPLUS220™ - 125W (Tc) -55°C ~ 150°C (TJ)
IXTP230N04T4

IXTP230N04T4

MOSFET N-CH 40V 230A TO220AB

IXYS

7,090 -
IXTP230N04T4

数据表

Trench TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 230A (Tc) 10V 2.9mOhm @ 115A, 10V Through Hole 4V @ 250µA 140 nC @ 10 V 40 V ±15V 7400 pF @ 25 V - - TO-220-3 - 340W (Tc) -55°C ~ 175°C (TJ)
IXTY8N65X2

IXTY8N65X2

MOSFET N-CH 650V 8A TO252

IXYS

345 -
IXTY8N65X2

数据表

Ultra X2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 500mOhm @ 4A, 10V Surface Mount 5V @ 250µA 12 nC @ 10 V 650 V ±30V 800 pF @ 25 V - - TO-252AA - 150W (Tc) -55°C ~ 150°C (TJ)
IXFA34N65X2-TRL

IXFA34N65X2-TRL

MOSFET N-CH 650V 34A TO263

IXYS

3,404 -
IXFA34N65X2-TRL

数据表

HiPerFET™, Ultra X2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 34A (Tc) 10V 100mOhm @ 17A, 10V Surface Mount 5V @ 2.5mA 56 nC @ 10 V 650 V ±30V 3230 pF @ 25 V - - TO-263 (D2PAK) - 540W (Tc) -55°C ~ 150°C (TJ)
IXFA220N06T3

IXFA220N06T3

MOSFET N-CH 60V 220A TO263

IXYS

2,673 -
IXFA220N06T3

数据表

HiperFET™, TrenchT3™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 220A (Tc) 10V 4mOhm @ 100A, 10V Surface Mount 4V @ 250µA 136 nC @ 10 V 60 V ±20V 8500 pF @ 25 V - - TO-263 - 440W (Tc) -55°C ~ 175°C (TJ)
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