富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXTP1N100

IXTP1N100

MOSFET N-CH 1000V 1.5A TO220AB

IXYS

6,028 -
IXTP1N100

数据表

- TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 1.5A (Tc) 10V 11Ohm @ 1A, 10V Through Hole 4.5V @ 25µA 14.5 nC @ 10 V 1000 V ±30V 400 pF @ 25 V - - TO-220-3 - 54W (Tc) -55°C ~ 150°C (TJ)
IXTP110N055P

IXTP110N055P

MOSFET N-CH 55V 110A TO220AB

IXYS

6,492 -
IXTP110N055P

数据表

Polar TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 13.5mOhm @ 500mA, 10V Through Hole 5.5V @ 250µA 76 nC @ 10 V 55 V ±20V 2210 pF @ 25 V - - TO-220-3 - 390W (Tc) -55°C ~ 175°C (TJ)
IXFP12N50P

IXFP12N50P

MOSFET N-CH 500V 12A TO220AB

IXYS

277 -
IXFP12N50P

数据表

HiPerFET™, Polar TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 500mOhm @ 6A, 10V Through Hole 5.5V @ 1mA 29 nC @ 10 V 500 V ±30V 1830 pF @ 25 V - - TO-220-3 - 200W (Tc) -55°C ~ 150°C (TJ)
IXTY1N120PTRL

IXTY1N120PTRL

MOSFET N-CH 1200V 1A TO252

IXYS

4,113 -
IXTY1N120PTRL

数据表

Polar TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1A (Tc) 10V 20Ohm @ 500mA, 10V Surface Mount 4.5V @ 50µA 17.6 nC @ 10 V 1200 V ±30V 445 pF @ 25 V - - TO-252AA - 63W (Tc) -55°C ~ 150°C (TJ)
IXTA1N100

IXTA1N100

MOSFET N-CH 1000V 1.5A TO263

IXYS

8,391 -
IXTA1N100

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.5A (Tc) 10V 11Ohm @ 1A, 10V Surface Mount 4.5V @ 25µA 14.5 nC @ 10 V 1000 V ±30V 400 pF @ 25 V - - TO-263AA - 54W (Tc) -55°C ~ 150°C (TJ)
IXTA110N055P

IXTA110N055P

MOSFET N-CH 55V 110A TO263

IXYS

3,241 -
IXTA110N055P

数据表

Polar TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 13.5mOhm @ 500mA, 10V Surface Mount 5.5V @ 250µA 76 nC @ 10 V 55 V ±20V 2210 pF @ 25 V - - TO-263AA - 390W (Tc) -55°C ~ 175°C (TJ)
IXTA2N80

IXTA2N80

MOSFET N-CH 800V 2A TO263

IXYS

7,496 -
IXTA2N80

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Box Obsolete N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 6.2Ohm @ 500mA, 10V Surface Mount 5.5V @ 250µA 22 nC @ 10 V 800 V ±20V 440 pF @ 25 V - - TO-263AA - 54W (Tc) -55°C ~ 150°C (TJ)
IXTY06N120P

IXTY06N120P

MOSFET N-CH 1200V 90A TO252

IXYS

9,057 -
IXTY06N120P

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 90A (Tc) - - Surface Mount - - 1200 V - - - - TO-252AA - - -
IRFP260

IRFP260

MOSFET N-CH 200V 46A TO247AD

IXYS

8,367 -
IRFP260

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 46A (Tc) 10V 55mOhm @ 28A, 10V Through Hole 4V @ 250µA 230 nC @ 10 V 200 V ±20V 3900 pF @ 25 V - - TO-247 (IXTH) - 280W (Tc) -55°C ~ 150°C (TJ)
IRFP264

IRFP264

MOSFET N-CH 250V 38A TO247AD

IXYS

3,681 -
IRFP264

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 38A (Tc) 10V 75mOhm @ 23A, 10V Through Hole 4V @ 250µA 210 nC @ 10 V 250 V ±20V 4800 pF @ 25 V - - TO-247 (IXTH) - 280W (Tc) -55°C ~ 150°C (TJ)
共 1116 条记录«上一页1... 1314151617181920...112下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户