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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXTY01N80

IXTY01N80

MOSFET N-CH 800V 100MA TO252AA

IXYS

6,299 -
IXTY01N80

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100mA (Tc) 10V 50Ohm @ 100mA, 10V Surface Mount 4.5V @ 25µA 8 nC @ 10 V 800 V ±20V 60 pF @ 25 V - - TO-252AA - 25W (Tc) -55°C ~ 150°C (TJ)
MXB12R600DPHFC

MXB12R600DPHFC

MOSFET N-CH 600V 15A

IXYS

243 -
MXB12R600DPHFC

数据表

- ISOPLUSi5-PAK™ Tube Active N-Channel MOSFET (Metal Oxide) 13A (Tc) - - Through Hole - - 650 V - - - - ISOPLUS i4-PAC™ - - -
IXFA4N60P3

IXFA4N60P3

MOSFET N-CH 600V 4A TO263

IXYS

7,594 -
IXFA4N60P3

数据表

HiPerFET™, Polar3™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2.2Ohm @ 2A, 10V Surface Mount 5V @ 250µA 6.9 nC @ 10 V 600 V ±30V 365 pF @ 25 V - - TO-263AA (IXFA) - 114W (Tc) -55°C ~ 150°C (TJ)
IXFN55N120SK

IXFN55N120SK

SIC AND MULTICHIP DISCRETE

IXYS

182 -
IXFN55N120SK

数据表

- SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 54A (Tc) 15V 42mOhm @ 40A, 15V Chassis Mount 3.6V @ 12mA 107 nC @ 15 V 1200 V +15V, -4V 3360 pF @ 1000 V - - SOT-227B - - -40°C ~ 150°C (TJ)
IXFY5N50P3

IXFY5N50P3

MOSFET N-CH 500V 5A TO252

IXYS

4,750 -
IXFY5N50P3

数据表

HiPerFET™, Polar3™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.65Ohm @ 2.5A, 10V Surface Mount 5V @ 1mA 6.9 nC @ 10 V 500 V ±30V 370 pF @ 25 V - - TO-252AA - 114W (Tc) -55°C ~ 150°C (TJ)
IXTU05N120

IXTU05N120

MOSFET N-CH 1200V 500MA TO251

IXYS

6,201 -
IXTU05N120

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500mA (Tc) - - Through Hole - - 1200 V - - - - TO-251AA - - -
IXTU01N80

IXTU01N80

MOSFET N-CH 800V 100MA TO251

IXYS

2,214 -
IXTU01N80

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100mA (Tc) 10V 50Ohm @ 100mA, 10V Through Hole 4.5V @ 25µA 8 nC @ 10 V 800 V ±20V 60 pF @ 25 V - - TO-251AA - 25W (Tc) -55°C ~ 150°C (TJ)
IXTY01N100-TRL

IXTY01N100-TRL

MOSFET N-CH 1000V 100MA TO252

IXYS

3,380 -
IXTY01N100-TRL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100mA (Tc) 10V 80Ohm @ 50mA, 10V Surface Mount 4.5V @ 25µA 6.9 nC @ 10 V 1000 V ±20V 54 pF @ 25 V - - TO-252AA - 25W (Tc) -55°C ~ 150°C (TJ)
IXTP05N100P

IXTP05N100P

MOSFET N-CH 1000V 500MA TO220AB

IXYS

4,868 -
IXTP05N100P

数据表

Polar TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500mA (Tc) 10V 30Ohm @ 250mA, 10V Through Hole 4V @ 50µA 8.1 nC @ 10 V 1000 V ±20V 196 pF @ 25 V - - TO-220-3 - 50W (Tc) -55°C ~ 150°C (TJ)
IXFP5N50P3

IXFP5N50P3

MOSFET N-CH 500V 5A TO220AB

IXYS

8,079 -
IXFP5N50P3

数据表

HiPerFET™, Polar3™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.65Ohm @ 2.5A, 10V Through Hole 5V @ 1mA 6.9 nC @ 10 V 500 V ±30V 370 pF @ 25 V - - TO-220-3 - 114W (Tc) -55°C ~ 150°C (TJ)
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