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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXTA32N20T

IXTA32N20T

MOSFET N-CH 200V 32A TO263

IXYS

2,544 -
IXTA32N20T

数据表

Trench TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 32A (Tc) 10V 72mOhm @ 16A, 10V Surface Mount 4.5V @ 250µA 38 nC @ 10 V 200 V ±20V 1760 pF @ 25 V - - TO-263AA - 200W (Tc) -55°C ~ 175°C (TJ)
IXTA1N80

IXTA1N80

MOSFET N-CH 800V 750MA TO263

IXYS

4,167 -
IXTA1N80

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 750mA (Tc) 10V 11Ohm @ 500mA, 10V Surface Mount 4.5V @ 25µA 8.5 nC @ 10 V 800 V ±20V 220 pF @ 25 V - - TO-263AA - 40W (Tc) -55°C ~ 150°C (TJ)
IXTU05N100

IXTU05N100

MOSFET N-CH 1000V 750MA TO251

IXYS

5,756 -
IXTU05N100

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 750mA (Tc) 10V 17Ohm @ 375mA, 10V Through Hole 4.5V @ 250µA 7.8 nC @ 10 V 1000 V ±30V 260 pF @ 25 V - - TO-251AA - 40W (Tc) -55°C ~ 150°C (TJ)
IXTY12N06TTRL

IXTY12N06TTRL

MOSFET N-CH 60V 12A TO252

IXYS

4,558 -
IXTY12N06TTRL

数据表

TrenchMV™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 85mOhm @ 6A, 10V Surface Mount 4V @ 25µA 3.4 nC @ 10 V 60 V ±20V 256 pF @ 25 V - - TO-252AA - 33W (Tc) -55°C ~ 175°C (TJ)
IXTP2N80

IXTP2N80

MOSFET N-CH 800V 2A TO220AB

IXYS

2,945 -
IXTP2N80

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 6.2Ohm @ 500mA, 10V Through Hole 5.5V @ 250µA 22 nC @ 10 V 800 V ±20V 440 pF @ 25 V - - TO-220-3 - 54W (Tc) -55°C ~ 150°C (TJ)
IXFP8N50P3

IXFP8N50P3

MOSFET N-CH 500V 8A TO220AB

IXYS

9,253 -
IXFP8N50P3

数据表

HiPerFET™, Polar3™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 800mOhm @ 4A, 10V Through Hole 5V @ 1.5mA 13 nC @ 10 V 500 V ±30V 705 pF @ 25 V - - TO-220-3 - 180W (Tc) -55°C ~ 150°C (TJ)
IXTI10N60P

IXTI10N60P

MOSFET N-CH 600V 10A TO262

IXYS

3,022 -
IXTI10N60P

数据表

PolarHV™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 740mOhm @ 5A, 10V Through Hole 5V @ 100µA 32 nC @ 10 V 600 V ±30V 1610 pF @ 25 V - - TO-262 (I2PAK) - 200W (Tc) -55°C ~ 150°C (TJ)
IXTP10N60PM

IXTP10N60PM

MOSFET N-CH 600V 5A TO220AB

IXYS

6,452 -
IXTP10N60PM

数据表

Polar TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 740mOhm @ 5A, 10V Through Hole 5V @ 100µA 32 nC @ 10 V 600 V ±30V 1610 pF @ 25 V - - TO-220-3 - 50W (Tc) -55°C ~ 150°C (TJ)
IXFA8N50P3

IXFA8N50P3

MOSFET N-CH 500V 8A TO263

IXYS

8,293 -
IXFA8N50P3

数据表

HiPerFET™, Polar3™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 800mOhm @ 4A, 10V Surface Mount 5V @ 1.5mA 13 nC @ 10 V 500 V ±30V 705 pF @ 25 V - - TO-263AA (IXFA) - 180W (Tc) -55°C ~ 150°C (TJ)
IXTU02N50D

IXTU02N50D

MOSFET N-CH 500V 200MA TO251

IXYS

356 -
IXTU02N50D

数据表

Depletion TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 200mA (Tc) 10V 30Ohm @ 50mA, 0V Through Hole 5V @ 25µA - 500 V ±20V 120 pF @ 25 V - - TO-251AA - 1.1W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
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