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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXFK32N80Q3

IXFK32N80Q3

MOSFET N-CH 800V 32A TO264AA

IXYS

442 -
IXFK32N80Q3

数据表

HiPerFET™, Q3 Class TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 32A (Tc) 10V 270mOhm @ 16A, 10V Through Hole 6.5V @ 4mA 140 nC @ 10 V 800 V ±30V 6940 pF @ 25 V - - TO-264AA (IXFK) - 1000W (Tc) -55°C ~ 150°C (TJ)
IXFN210N30P3

IXFN210N30P3

MOSFET N-CH 300V 192A SOT227B

IXYS

300 -
IXFN210N30P3

数据表

HiPerFET™, Polar3™ SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 192A (Tc) 10V 14.5mOhm @ 105A, 10V Chassis Mount 5V @ 8mA 268 nC @ 10 V 300 V ±20V 16200 pF @ 25 V - - SOT-227B - 1500W (Tc) -55°C ~ 150°C (TJ)
IXKK85N60C

IXKK85N60C

MOSFET N-CH 600V 85A TO264A

IXYS

138 -
IXKK85N60C

数据表

CoolMOS™ TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 85A (Tc) 10V 36mOhm @ 55A, 10V Through Hole 4V @ 4mA 650 nC @ 10 V 600 V ±20V - - - TO-264AA - - -55°C ~ 150°C (TJ)
IXTX8N150L

IXTX8N150L

MOSFET N-CH 1500V 8A PLUS247-3

IXYS

256 -
IXTX8N150L

数据表

Linear TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 20V 3.6Ohm @ 4A, 20V Through Hole 8V @ 250µA 250 nC @ 15 V 1500 V ±30V 8000 pF @ 25 V - - PLUS247™-3 - 700W (Tc) -55°C ~ 150°C (TJ)
IXFN80N50Q3

IXFN80N50Q3

MOSFET N-CH 500V 63A SOT227B

IXYS

140 -
IXFN80N50Q3

数据表

HiPerFET™, Q3 Class SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 63A (Tc) 10V 65mOhm @ 40A, 10V Chassis Mount 6.5V @ 8mA 200 nC @ 10 V 500 V ±30V 10000 pF @ 25 V - - SOT-227B - 780W (Tc) -55°C ~ 150°C (TJ)
IXTF1R4N450

IXTF1R4N450

MOSFET N-CH 4500V 1.4A I4PAC

IXYS

41 -
IXTF1R4N450

数据表

- i4-Pac™-5 (3 Leads) Tube Active N-Channel MOSFET (Metal Oxide) 1.4A (Tc) 10V 40Ohm @ 50mA, 10V Through Hole 6V @ 250µA 88 nC @ 10 V 4500 V ±20V 3300 pF @ 25 V - - ISOPLUS i4-PAC™ - 190W (Tc) -55°C ~ 150°C (TJ)
IXTY1R4N60P

IXTY1R4N60P

MOSFET N-CH 600V 1.4A TO252

IXYS

8,387 -
IXTY1R4N60P

数据表

PolarHV™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.4A (Tc) 10V 9Ohm @ 700mA, 10V Surface Mount 5.5V @ 25µA 5.2 nC @ 10 V 600 V ±30V 140 pF @ 25 V - - TO-252AA - 50W (Tc) -55°C ~ 150°C (TJ)
IXTP1R6N50P

IXTP1R6N50P

MOSFET N-CH 500V 1.6A TO220AB

IXYS

5,124 -
IXTP1R6N50P

数据表

Polar TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.6A (Tc) 10V 6.5Ohm @ 500mA, 10V Through Hole 5.5V @ 25µA 3.9 nC @ 10 V 500 V ±30V 140 pF @ 25 V - - TO-220-3 - 43W (Tc) -55°C ~ 150°C (TJ)
IXTP1R4N60P

IXTP1R4N60P

MOSFET N-CH 600V 1.4A TO220AB

IXYS

8,058 -
IXTP1R4N60P

数据表

PolarHV™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.4A (Tc) 10V 9Ohm @ 700mA, 10V Through Hole 5.5V @ 25µA 5.2 nC @ 10 V 600 V ±30V 140 pF @ 25 V - - TO-220-3 - 50W (Tc) -55°C ~ 150°C (TJ)
IXTU12N06T

IXTU12N06T

MOSFET N-CH 60V 12A TO251

IXYS

4,302 -
IXTU12N06T

数据表

Trench TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 85mOhm @ 6A, 10V Through Hole 4V @ 25µA 3.4 nC @ 10 V 60 V ±20V 256 pF @ 25 V - - TO-251AA - 33W (Tc) -55°C ~ 175°C (TJ)
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