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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
APT18M80S

APT18M80S

MOSFET N-CH 800V 19A D3PAK

Microsemi Corporation

5,835 -
APT18M80S

数据表

POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Bulk Active N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 530mOhm @ 9A, 10V Surface Mount 5V @ 1mA 120 nC @ 10 V 800 V ±30V 3760 pF @ 25 V - - D3PAK - 500W (Tc) -55°C ~ 150°C (TJ)
JAN2N6756

JAN2N6756

MOSFET N-CH 100V 14A TO204AA

Microsemi Corporation

3,757 -
JAN2N6756

数据表

- TO-204AA, TO-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 210mOhm @ 14A, 10V Through Hole 4V @ 250µA 35 nC @ 10 V 100 V ±20V - MIL-PRF-19500/542 - TO-204AA (TO-3) Military 4W (Ta), 75W (Tc) -55°C ~ 150°C (TJ)
JAN2N6764

JAN2N6764

MOSFET N-CH 100V 38A TO204AE

Microsemi Corporation

7,628 -
JAN2N6764

数据表

- TO-204AE Bulk Obsolete N-Channel MOSFET (Metal Oxide) 38A (Tc) 10V 65mOhm @ 38A, 10V Through Hole 4V @ 250µA 125 nC @ 10 V 100 V ±20V - MIL-PRF-19500/543 - - Military 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ)
JAN2N6766

JAN2N6766

MOSFET N-CH 200V 30A TO3

Microsemi Corporation

8,868 -
JAN2N6766

数据表

- TO-204AE Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 90mOhm @ 30A, 10V Through Hole 4V @ 250µA 115 nC @ 10 V 200 V ±20V - MIL-PRF-19500/543 - TO-3 Military 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ)
JAN2N6768

JAN2N6768

MOSFET N-CH 400V 14A TO204AE

Microsemi Corporation

3,459 -
JAN2N6768

数据表

- TO-204AE Bulk Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 400mOhm @ 14A, 10V Through Hole 4V @ 250µA 110 nC @ 10 V 400 V ±20V - MIL-PRF-19500/543 - - Military 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ)
JAN2N6770

JAN2N6770

MOSFET N-CH 500V 12A TO204AE

Microsemi Corporation

4,690 -
JAN2N6770

数据表

- TO-204AE Bulk Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 500mOhm @ 12A, 10V Through Hole 4V @ 250µA 120 nC @ 10 V 500 V ±20V - MIL-PRF-19500/543 - TO-204AE (TO-3) Military 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ)
JAN2N6782

JAN2N6782

MOSFET N-CH 100V 3.5A TO39

Microsemi Corporation

3,073 -
JAN2N6782

数据表

- TO-205AF Metal Can Bulk Obsolete N-Channel MOSFET (Metal Oxide) 3.5A (Tc) 10V 610mOhm @ 3.5A, 10V Through Hole 4V @ 250µA 8.1 nC @ 10 V 100 V ±20V - MIL-PRF-19500/556 - TO-39 Military 800mW (Ta), 15W (Tc) -55°C ~ 150°C (TJ)
JAN2N6782U

JAN2N6782U

MOSFET N-CH 100V 3.5A 18ULCC

Microsemi Corporation

7,296 -
JAN2N6782U

数据表

- 18-CLCC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 3.5A (Tc) 10V 610mOhm @ 3.5A, 10V Surface Mount 4V @ 250µA 8.1 nC @ 10 V 100 V ±20V - MIL-PRF-19500/556 - 18-ULCC (9.14x7.49) Military 800mW (Ta), 15W (Tc) -55°C ~ 150°C (TJ)
JAN2N6788

JAN2N6788

MOSFET N-CH 100V 6A TO39

Microsemi Corporation

9,261 -
JAN2N6788

数据表

- TO-205AF Metal Can Bulk Obsolete N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 350mOhm @ 6A, 10V Through Hole 4V @ 250µA 18 nC @ 10 V 100 V ±20V - MIL-PRF-19500/555 - TO-39 Military 800mW (Tc) -55°C ~ 150°C (TJ)
JAN2N6796

JAN2N6796

MOSFET N-CH 100V 8A TO39

Microsemi Corporation

6,420 -
JAN2N6796

数据表

- TO-205AF Metal Can Bulk Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 195mOhm @ 8A, 10V Through Hole 4V @ 250µA 28.51 nC @ 10 V 100 V ±20V - MIL-PRF-19500/557 - TO-39 Military 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
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