富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
JAN2N6796U

JAN2N6796U

MOSFET N-CH 100V 8A 18ULCC

Microsemi Corporation

2,316 -
JAN2N6796U

数据表

- 18-CLCC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 195mOhm @ 8A, 10V Surface Mount 4V @ 250µA 28.51 nC @ 10 V 100 V ±20V - MIL-PRF-19500/557 - 18-ULCC (9.14x7.49) Military 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
JAN2N6798

JAN2N6798

MOSFET N-CH 200V 5.5A TO39

Microsemi Corporation

6,320 -
JAN2N6798

数据表

- TO-205AF Metal Can Bulk Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 420mOhm @ 5.5A, 10V Through Hole 4V @ 250µA 42.07 nC @ 10 V 200 V ±20V - MIL-PRF-19500/557 - TO-39 Military 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
JAN2N6798U

JAN2N6798U

MOSFET N-CH 200V 5.5A 18ULCC

Microsemi Corporation

6,654 -
JAN2N6798U

数据表

- 18-CLCC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 420mOhm @ 5.5A, 10V Surface Mount 4V @ 250µA 42.07 nC @ 10 V 200 V ±20V - MIL-PRF-19500/557 - 18-ULCC (9.14x7.49) Military 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
JAN2N6800

JAN2N6800

MOSFET N-CH 400V 3A TO39

Microsemi Corporation

4,309 -
JAN2N6800

数据表

- TO-205AF Metal Can Bulk Obsolete N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 1.1Ohm @ 3A, 10V Through Hole 4V @ 250µA 34.75 nC @ 10 V 400 V ±20V - MIL-PRF-19500/557 - TO-39 Military 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
JAN2N6802

JAN2N6802

MOSFET N-CH 500V 2.5A TO39

Microsemi Corporation

7,584 -
JAN2N6802

数据表

- TO-205AF Metal Can Bulk Obsolete N-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 1.6Ohm @ 2.5A, 10V Through Hole 4V @ 250µA 33 nC @ 10 V 500 V ±20V - MIL-PRF-19500/557 - TO-39 Military 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
JAN2N6849

JAN2N6849

MOSFET P-CH 100V 6.5A TO39

Microsemi Corporation

6,992 -
JAN2N6849

数据表

- TO-205AF Metal Can Bulk Obsolete P-Channel MOSFET (Metal Oxide) 6.5A (Tc) 10V 320mOhm @ 6.5A, 10V Through Hole 4V @ 250µA 34.8 nC @ 10 V 100 V ±20V - MIL-PRF-19500/564 - TO-39 Military 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
JAN2N6849U

JAN2N6849U

MOSFET P-CH 100V 6.5A 18ULCC

Microsemi Corporation

2,211 -
JAN2N6849U

数据表

- 18-CLCC Bulk Obsolete P-Channel MOSFET (Metal Oxide) 6.5A (Tc) 10V 320mOhm @ 6.5A, 10V Surface Mount 4V @ 250µA 34.8 nC @ 10 V 100 V ±20V - MIL-PRF-19500/564 - 18-ULCC (9.14x7.49) Military 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
JAN2N6901

JAN2N6901

MOSFET N-CH 100V 1.69A TO205AF

Microsemi Corporation

4,079 -
JAN2N6901

数据表

- TO-205AF Metal Can Bulk Obsolete N-Channel MOSFET (Metal Oxide) 1.69A (Tc) 5V 1.4Ohm @ 1.07A, 5V Through Hole 2V @ 1mA 5 nC @ 5 V 100 V ±10V - MIL-PRF-19500/570 - TO-205AF (TO-39) Military 8.33W (Tc) -55°C ~ 150°C (TJ)
JAN2N7224U

JAN2N7224U

MOSFET N-CH 100V 34A TO267AB

Microsemi Corporation

3,764 -
JAN2N7224U

数据表

- TO-267AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 34A (Tc) 10V 81mOhm @ 34A, 10V Surface Mount 4V @ 250µA 125 nC @ 10 V 100 V ±20V - MIL-PRF-19500/592 - TO-267AB Military 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ)
JAN2N7227

JAN2N7227

MOSFET N-CH 400V 14A TO254AA

Microsemi Corporation

4,582 -
JAN2N7227

数据表

- TO-254-3, TO-254AA (Straight Leads) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 415mOhm @ 14A, 10V Through Hole 4V @ 250µA 110 nC @ 10 V 400 V ±20V - MIL-PRF-19500/592 - TO-254AA Military 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ)
共 253 条记录«上一页1... 89101112131415...26下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户