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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
XP60SA290DIT

XP60SA290DIT

MOSFET N CH 600V 13.3A TO-220CF

YAGEO XSEMI

6,820 -
XP60SA290DIT

数据表

XP60SA290D TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13.3A (Tc) 10V 290mOhm @ 5.8A, 10V Through Hole 4V @ 250µA 48 nC @ 10 V 600 V ±20V 1632 pF @ 100 V - - TO-220CFM - 1.92W (Ta), 31.2W (Tc) -55°C ~ 150°C (TJ)
STP130NH02L

STP130NH02L

MOSFET N-CH 24V 90A TO220

STMicroelectronics

5,835 -
STP130NH02L

数据表

STripFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 90A (Tc) 5V, 10V 4.4mOhm @ 45A, 10V Through Hole 1V @ 250µA 93 nC @ 10 V 24 V ±20V 4450 pF @ 15 V - - TO-220 - 150W (Tc) -55°C ~ 175°C (TJ)
IRF7526D1TR

IRF7526D1TR

MOSFET P-CH 30V 2A MICRO8

Infineon Technologies

6,714 -
IRF7526D1TR

数据表

FETKY™ 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2A (Ta) 4.5V, 10V 200mOhm @ 1.2A, 10V Surface Mount 1V @ 250µA 11 nC @ 10 V 30 V ±20V 180 pF @ 25 V - Schottky Diode (Isolated) Micro8™ - 1.25W (Ta) -55°C ~ 150°C (TJ)
IRFR4105ZTRL

IRFR4105ZTRL

MOSFET N-CH 55V 30A DPAK

Infineon Technologies

6,065 -
IRFR4105ZTRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 24.5mOhm @ 18A, 10V Surface Mount 4V @ 250µA 27 nC @ 10 V 55 V ±20V 740 pF @ 25 V - - TO-252AA (DPAK) - 48W (Tc) -55°C ~ 175°C (TJ)
IRFR4105ZTRR

IRFR4105ZTRR

MOSFET N-CH 55V 30A DPAK

Infineon Technologies

8,185 -
IRFR4105ZTRR

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 24.5mOhm @ 18A, 10V Surface Mount 4V @ 250µA 27 nC @ 10 V 55 V ±20V 740 pF @ 25 V - - TO-252AA (DPAK) - 48W (Tc) -55°C ~ 175°C (TJ)
SIHA690N60E-GE3

SIHA690N60E-GE3

MOSFET N-CH 600V 4.3A TO220

Vishay Siliconix

4,730 -
SIHA690N60E-GE3

数据表

E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 4.3A (Tc) 10V 700mOhm @ 2A, 10V Through Hole 5V @ 250µA 12 nC @ 10 V 600 V ±30V 347 pF @ 100 V - - TO-220 Full Pack - 29W (Tc) -55°C ~ 150°C (TJ)
FDD6676AS

FDD6676AS

MOSFET N-CH 30V 90A TO252

onsemi

5,095 -
FDD6676AS

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 90A (Ta) 4.5V, 10V 5.7mOhm @ 16A, 10V Surface Mount 3V @ 1mA 64 nC @ 10 V 30 V ±20V 2500 pF @ 15 V - - TO-252AA - 70W (Ta) -55°C ~ 155°C (TJ)
HUFA75332S3S

HUFA75332S3S

MOSFET N-CH 55V 60A D2PAK

onsemi

9,286 -
HUFA75332S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 19mOhm @ 60A, 10V Surface Mount 4V @ 250µA 85 nC @ 20 V 55 V ±20V 1300 pF @ 25 V - - TO-263 (D2PAK) - 145W (Tc) -55°C ~ 175°C (TJ)
IRF7606TR

IRF7606TR

MOSFET P-CH 30V 3.6A MICRO8

Infineon Technologies

5,146 -
IRF7606TR

数据表

HEXFET® 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.6A (Ta) 4.5V, 10V 90mOhm @ 2.4A, 10V Surface Mount 1V @ 250µA 30 nC @ 10 V 30 V ±20V 520 pF @ 25 V - - Micro8™ - 1.8W (Ta) -55°C ~ 150°C (TJ)
RTR025P02TL

RTR025P02TL

MOSFET P-CH 20V 2.5A TSMT3

Rohm Semiconductor

3,873 -
RTR025P02TL

数据表

- SC-96 Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 2.5A (Ta) 2.5V, 4.5V 95mOhm @ 2.5A, 4.5V Surface Mount 2V @ 1mA 7 nC @ 4.5 V 20 V ±12V 630 pF @ 10 V - - TSMT3 - 1W (Ta) 150°C (TJ)
IRLR7807ZTRPBF

IRLR7807ZTRPBF

MOSFET N-CH 30V 43A DPAK

Infineon Technologies

9,928 -
IRLR7807ZTRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 43A (Tc) 4.5V, 10V 13.8mOhm @ 15A, 10V Surface Mount 2.25V @ 250µA 11 nC @ 4.5 V 30 V ±20V 780 pF @ 15 V - - TO-252AA (DPAK) - 40W (Tc) -55°C ~ 175°C (TJ)
IRF7353D1TRPBF

IRF7353D1TRPBF

MOSFET N-CH 30V 6.5A 8SO

Infineon Technologies

4,021 -
IRF7353D1TRPBF

数据表

FETKY™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6.5A (Ta) 4.5V, 10V 32mOhm @ 5.8A, 10V Surface Mount 1V @ 250µA 33 nC @ 10 V 30 V ±20V 650 pF @ 25 V - Schottky Diode (Isolated) 8-SO - 2W (Ta) -55°C ~ 150°C (TJ)
IRF7807VTRPBF

IRF7807VTRPBF

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies

4,319 -
IRF7807VTRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V Surface Mount 3V @ 250µA 14 nC @ 5 V 30 V ±20V - - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
PJD60P04E-AU_L2_006A1

PJD60P04E-AU_L2_006A1

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

1,185 -
PJD60P04E-AU_L2_006A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12A (Ta), 61A (Tc) 4.5V, 10V 11.3mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 56 nC @ 10 V 40 V ±25V 2897 pF @ 25 V AEC-Q101 - TO-252AA Automotive 3W (Ta), 75W (Tc) -55°C ~ 175°C (TJ)
NTTFS002N04CTAG

NTTFS002N04CTAG

MOSFET N-CH 40V 27A/136A 8WDFN

onsemi

1,450 -
NTTFS002N04CTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 27A (Ta), 136A (Tc) 10V 2.4mOhm @ 50A, 10V Surface Mount 3.5V @ 90µA 34 nC @ 10 V 40 V ±20V 2250 pF @ 25 V - - 8-WDFN (3.3x3.3) - 3.2W (Ta), 85W (Tc) -55°C ~ 175°C (TJ)
PSMN3R5-40YSDX

PSMN3R5-40YSDX

MOSFET N-CH 40V 120A LFPAK56

Nexperia USA Inc.

1,366 -
PSMN3R5-40YSDX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.5mOhm @ 25A, 10V Surface Mount 3.6V @ 1mA 19 nC @ 10 V 40 V ±20V 3245 pF @ 20 V - Schottky Diode (Body) LFPAK56, Power-SO8 - 115W (Tc) -55°C ~ 175°C (TJ)
SISS5112DN-T1-GE3

SISS5112DN-T1-GE3

N-CHANNEL 100 V (D-S) MOSFET POW

Vishay Siliconix

11,904 -
SISS5112DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Ta), 40.7A (Tc) 7.5V, 10V 14.9mOhm @ 10A, 10V Surface Mount 4V @ 250µA 16 nC @ 10 V 100 V ±20V 790 pF @ 50 V - - PowerPAK® 1212-8S - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
ISZ173N15NM6ATMA1

ISZ173N15NM6ATMA1

TRENCH >=100V

Infineon Technologies

4,965 -
ISZ173N15NM6ATMA1

数据表

OptiMOS™ 6 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7.9A (Ta), 48A (Tc) 8V, 15V 16.3mOhm @ 16A, 15V Surface Mount 4V @ 35µA 19.2 nC @ 10 V 150 V ±20V 1300 pF @ 75 V - - PG-TSDSON-8 FL - 2.5W (Ta), 94W (Tc) -55°C ~ 175°C (TJ)
PJD30N04S-AU_L2_002A1

PJD30N04S-AU_L2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
PJD30N04S-AU_L2_002A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12.5A (Ta), 43A (Tc) 4.5V, 10V 10.6mOhm @ 20A, 10V Surface Mount 2.3V @ 50µA 13 nC @ 10 V 40 V ±20V 744 pF @ 25 V AEC-Q101 - TO-252AA Automotive 3W (Ta), 36W (Tc) -55°C ~ 175°C (TJ)
XP3N1R0MT

XP3N1R0MT

FET N-CH 30V 54.2A 245A PMPAK

YAGEO XSEMI

998 -
XP3N1R0MT

数据表

XP3N1R0 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 54.2A (Ta), 245A (Tc) 4.5V, 10V 1.05mOhm @ 20A, 10V Surface Mount 2.2V @ 250µA 120 nC @ 4.5 V 30 V ±20V 12320 pF @ 15 V - - PMPAK® 5 x 6 - 5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
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