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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRL7833PBF

IRL7833PBF

MOSFET N-CH 30V 150A TO220AB

Infineon Technologies

3,486 -
IRL7833PBF

数据表

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 150A (Tc) 4.5V, 10V 3.8mOhm @ 38A, 10V Through Hole 2.3V @ 250µA 47 nC @ 4.5 V 30 V ±20V 4170 pF @ 15 V - - TO-220AB - 140W (Tc) -55°C ~ 175°C (TJ)
FQA44N08

FQA44N08

MOSFET N-CH 80V 49.8A TO3P

onsemi

2,656 -
FQA44N08

数据表

QFET® TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 49.8A (Tc) 10V 34mOhm @ 24.9A, 10V Through Hole 4V @ 250µA 50 nC @ 10 V 80 V ±25V 1430 pF @ 25 V - - TO-3P - 163W (Tc) -55°C ~ 175°C (TJ)
STFU8N60DM2

STFU8N60DM2

MOSFET N-CH 600V 12A TO220FP

STMicroelectronics

8,825 -
STFU8N60DM2

数据表

MDmesh™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 295mOhm @ 6A, 10V Through Hole 5V @ 250µA 20 nC @ 10 V 600 V ±25V 800 pF @ 100 V - - TO-220FP - 25W (Tc) -55°C ~ 150°C (TJ)
IRLR2905CPBF

IRLR2905CPBF

MOSFET N-CH 55V 36A DPAK

Infineon Technologies

2,155 -
IRLR2905CPBF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 36A (Ta) - - Surface Mount - - 55 V - - - - TO-252AA (DPAK) - - -
SIR166DP-T1-GE3

SIR166DP-T1-GE3

MOSFET N-CH 30V 40A PPAK SO-8

Vishay Siliconix

2,380 -
SIR166DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 3.2mOhm @ 15A, 10V Surface Mount 2.2V @ 250µA 77 nC @ 10 V 30 V ±20V 3340 pF @ 15 V - - PowerPAK® SO-8 - 5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ)
DI5A7N65D1K

DI5A7N65D1K

MOSFET DPAK N 650V 5.7A

Diotec Semiconductor

6,303 -
DI5A7N65D1K

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 5.7A (Tc) 10V 430mOhm @ 4A, 10V Surface Mount 4V @ 250µA 18.4 nC @ 10 V 650 V ±30V 722 pF @ 325 V - - TO-252 (DPAK) - 36W (Tc) -55°C ~ 150°C (TJ)
NVMFS4C310NWFT1G

NVMFS4C310NWFT1G

MOSFET N-CH 30V TRENCH

onsemi

1,500 -
NVMFS4C310NWFT1G

数据表

- - Tape & Reel (TR) Active - - 17A (Ta), 51A (Tc) - - - - - - - - AEC-Q101 - - Automotive - -
IPP126N10N3GXKSA1

IPP126N10N3GXKSA1

MOSFET N-CH 100V 58A TO220-3

Infineon Technologies

7,050 -
IPP126N10N3GXKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 58A (Tc) 6V, 10V 12.3mOhm @ 46A, 10V Through Hole 3.5V @ 46µA 35 nC @ 10 V 100 V ±20V 2500 pF @ 50 V - - PG-TO220-3 - 94W (Tc) -55°C ~ 175°C (TJ)
PSMN1R9-40YSBX

PSMN1R9-40YSBX

PSMN1R9-40YSB/SOT669/LFPAK

Nexperia USA Inc.

1,495 -
PSMN1R9-40YSBX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200A (Tc) 10V 1.9mOhm @ 25A, 10V Surface Mount 3.6V @ 1mA 78 nC @ 10 V 40 V ±20V 6297 pF @ 20 V - Schottky Diode (Body) LFPAK56, Power-SO8 - 194W (Tc) -55°C ~ 175°C (TJ)
NTMFS005P03P8ZST1G

NTMFS005P03P8ZST1G

PT8P PORTFOLIO EXPANSION

onsemi

1,268 -
NTMFS005P03P8ZST1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 15.3A (Ta) 4.5V, 10V 2.7mOhm @ 22A, 10V Surface Mount 3V @ 250µA 183 nC @ 10 V 30 V ±25V 7880 pF @ 15 V - - 5-DFN (5x6) (8-SOFL) - 900mW (Ta) -55°C ~ 150°C (TJ)
IPB12CNE8N G

IPB12CNE8N G

MOSFET N-CH 85V 67A D2PAK

Infineon Technologies

6,339 -
IPB12CNE8N G

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 67A (Tc) 10V 12.9mOhm @ 67A, 10V Surface Mount 4V @ 83µA 64 nC @ 10 V 85 V ±20V 4340 pF @ 40 V - - PG-TO263-3 - 125W (Tc) -55°C ~ 175°C (TJ)
SISS60DN-T1-GE3

SISS60DN-T1-GE3

MOSFET N-CH 30V 50.1/181.8A PPAK

Vishay Siliconix

5,995 -
SISS60DN-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50.1A (Ta), 181.8A (Tc) 4.5V, 10V 1.31mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 85.5 nC @ 10 V 30 V +16V, -12V 3960 pF @ 15 V - Schottky Diode (Body) PowerPAK® 1212-8S - 5.1W (Ta), 65.8W (Tc) -55°C ~ 150°C (TJ)
BSB019N03LX G

BSB019N03LX G

MOSFET N-CH 30V 32A/174A 2WDSON

Infineon Technologies

8,548 -
BSB019N03LX G

数据表

OptiMOS™ 3-WDSON Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 32A (Ta), 174A (Tc) 4.5V, 10V 1.9mOhm @ 30A, 10V Surface Mount 2.2V @ 250µA 92 nC @ 10 V 30 V ±20V 8400 pF @ 15 V - - MG-WDSON-2, CanPAK M™ - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ)
DI100N10PQ

DI100N10PQ

MOSFET PWRQFN 5X6 100V 0.0045OHM

Diotec Semiconductor

4,792 -
DI100N10PQ

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 5mOhm @ 30A, 10V Surface Mount 3V @ 250µA 64 nC @ 10 V 100 V ±20V 3400 pF @ 30 V - - 8-QFN (5x6) - 250W (Tc) -55°C ~ 175°C (TJ)
IRF7704

IRF7704

MOSFET P-CH 40V 4.6A 8TSSOP

Infineon Technologies

5,721 -
IRF7704

数据表

HEXFET® 8-TSSOP (0.173", 4.40mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 4.6A (Ta) 4.5V, 10V 46mOhm @ 4.6A, 10V Surface Mount 3V @ 250µA 38 nC @ 4.5 V 40 V ±20V 3150 pF @ 25 V - - 8-TSSOP - 1.5W (Ta) -55°C ~ 150°C (TJ)
SISS66DN-T1-GE3

SISS66DN-T1-GE3

MOSFET N-CH 30V 49.1/178.3A PPAK

Vishay Siliconix

4,562 -
SISS66DN-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 49.1A (Ta), 178.3A (Tc) 4.5V, 10V 1.38mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 85.5 nC @ 10 V 30 V +20V, -16V 3327 pF @ 15 V - Schottky Diode (Body) PowerPAK® 1212-8S - 5.1W (Ta), 65.8W (Tc) -55°C ~ 150°C (TJ)
RQ3G270BKFRATCB

RQ3G270BKFRATCB

AUTOMOTIVE NCH 40V 27A POWER MOS

Rohm Semiconductor

3,475 -
RQ3G270BKFRATCB

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
DMTH10H4M6SPSW-13

DMTH10H4M6SPSW-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

8,963 -
DMTH10H4M6SPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 21A (Ta), 115A (Tc) 10V 4.9mOhm @ 30A, 10V Surface Mount, Wettable Flank 4V @ 250µA 66 nC @ 10 V 100 V ±20V 4327 pF @ 50 V - - PowerDI5060-8 (Type UX) - 4.7W (Ta), 136W (Tc) -55°C ~ 175°C (TJ)
SIHU7N60E-GE3

SIHU7N60E-GE3

MOSFET N-CH 600V 7A IPAK

Vishay Siliconix

2,990 -
SIHU7N60E-GE3

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 600mOhm @ 3.5A, 10V Through Hole 4V @ 250µA 40 nC @ 10 V 600 V ±30V 680 pF @ 100 V - - TO-251AA - 78W (Tc) -55°C ~ 150°C (TJ)
IRF820SPBF

IRF820SPBF

MOSFET N-CH 500V 2.5A D2PAK

Vishay Siliconix

9,652 -
IRF820SPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V Surface Mount 4V @ 250µA 24 nC @ 10 V 500 V ±20V 360 pF @ 25 V - - TO-263 (D2PAK) - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
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