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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRLI2203NPBF

IRLI2203NPBF

MOSFET N-CH 30V 61A TO220AB FP

Infineon Technologies

7,477 -
IRLI2203NPBF

数据表

HEXFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 61A (Tc) 4.5V, 10V 7mOhm @ 37A, 10V Through Hole 1V @ 250µA 110 nC @ 4.5 V 30 V ±16V 3500 pF @ 25 V - - TO-220AB Full-Pak - 47W (Tc) -55°C ~ 175°C (TJ)
AOTF8N80

AOTF8N80

MOSFET N-CH 800V 7.4A TO220-3F

Alpha & Omega Semiconductor Inc.

3,667 -
AOTF8N80

数据表

- TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 7.4A (Tc) 10V 1.63Ohm @ 4A, 10V Through Hole 4.5V @ 250µA 32 nC @ 10 V 800 V ±30V 1650 pF @ 25 V - - TO-220F - 50W (Tc) -55°C ~ 150°C (TJ)
NVMYS006N08LHTWG

NVMYS006N08LHTWG

T8 80V LL LFPAK

onsemi

2,970 -
NVMYS006N08LHTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16A (Ta), 77A (Tc) 4.5V, 10V 6.2mOhm @ 15A, 10V Surface Mount 2V @ 95µA 34 nC @ 10 V 80 V ±20V 1950 pF @ 40 V AEC-Q101 - LFPAK4 (5x6) Automotive 3.7W (Ta), 89W (Tc) -55°C ~ 175°C (TJ)
PJQ5544-AU_R2_002A1

PJQ5544-AU_R2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,240 -
PJQ5544-AU_R2_002A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Ta), 130A (Tc) 4.5V, 10V 3.3mOhm @ 20A, 10V Surface Mount 2.3V @ 50µA 41 nC @ 10 V 40 V ±20V 2851 pF @ 25 V AEC-Q101 - DFN5060-8 Automotive 3.3W (Ta), 100W (Tc) -55°C ~ 175°C (TJ)
IAUCN08S7N024ATMA1

IAUCN08S7N024ATMA1

MOSFET_(75V 120V(

Infineon Technologies

1,990 -
IAUCN08S7N024ATMA1

数据表

OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 165A 10V - Surface Mount - 16 nC @ 10 V 80 V - - AEC-Q101 - PG-TDSON-8-34 Automotive - -55°C ~ 175°C
NTMFS0D9N04XMT1G

NTMFS0D9N04XMT1G

40V T10M IN S08FL PACKAGE

onsemi

1,455 -
NTMFS0D9N04XMT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 48A (Ta), 273A (Tc) 10V 0.9mOhm @ 30A, 10V Surface Mount 3.5V @ 150µA 61 nC @ 10 V 40 V ±20V 3918 pF @ 20 V - - 5-DFN (5x6) (8-SOFL) - 121W (Tc) -55°C ~ 175°C (TJ)
IAUAN04S7N007AUMA1

IAUAN04S7N007AUMA1

IAUAN04S7N007AUMA1

Infineon Technologies

448 -
IAUAN04S7N007AUMA1

数据表

OptiMOS™ 7 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Ta), 330A (Tj) 7V, 10V 0.72mOhm @ 100A, 10V Surface Mount 3V @ 73µA 94 nC @ 10 V 40 V ±20V 6460 pF @ 20 V AEC-Q101 - PG-HSOF-5-2 Automotive 149W (Tc) -55°C ~ 175°C (TJ)
PSMQC094N10NS2_R2_00201

PSMQC094N10NS2_R2_00201

100V/ 9.4M/ EXCELLECT LOW FOM MO

Panjit International Inc.

5,980 -
PSMQC094N10NS2_R2_00201

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
CDMSJ2204.7-650 SL

CDMSJ2204.7-650 SL

SUPER JUNCTION MOSFETS

Central Semiconductor Corp

500 -
CDMSJ2204.7-650 SL

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 4.7A (Tc) 10V 990mOhm @ 2A, 10V Through Hole 4V @ 250µA 9.7 nC @ 10 V 650 V 30V 306 pF @ 400 V - - TO-220FP - 22.5W (Tc) -55°C ~ 150°C (TJ)
SIHU4N80AE-GE3

SIHU4N80AE-GE3

MOSFET N-CH 800V 4.3A IPAK

Vishay Siliconix

2,994 -
SIHU4N80AE-GE3

数据表

E TO-251-3 Long Leads, IPAK, TO-251AB Tube Active N-Channel MOSFET (Metal Oxide) 4.3A (Tc) 10V 1.27Ohm @ 2A, 10V Through Hole 4V @ 250µA 32 nC @ 10 V 800 V ±30V 622 pF @ 100 V - - IPAK (TO-251) - 69W (Tc) -55°C ~ 150°C (TJ)
STD3NK80Z-1

STD3NK80Z-1

MOSFET N-CH 800V 2.5A IPAK

STMicroelectronics

2,395 -
STD3NK80Z-1

数据表

SuperMESH™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 4.5Ohm @ 1.25A, 10V Through Hole 4.5V @ 50µA 19 nC @ 10 V 800 V ±30V 485 pF @ 25 V - - TO-251 (IPAK) - 70W (Tc) -55°C ~ 150°C (TJ)
IPD65R660CFDATMA2

IPD65R660CFDATMA2

MOSFET N-CH 700V 6A TO252-3-313

Infineon Technologies

1,607 -
IPD65R660CFDATMA2

数据表

CoolMOS™ CFD2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 660mOhm @ 2.1A, 10V Surface Mount 4.5V @ 200µA 22 nC @ 10 V 700 V ±20V 615 pF @ 100 V - - PG-TO252-3-313 - 63W (Tc) -55°C ~ 150°C (TJ)
XP6NA3R5IT

XP6NA3R5IT

MOSFET N-CH 60V 72A TO220CFM

YAGEO XSEMI

1,000 -
XP6NA3R5IT

数据表

XP6NA3R5IT TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 72A (Tc) 10V 3.5mOhm @ 30A, 10V Through Hole 4V @ 250µA 125 nC @ 10 V 60 V ±20V 5440 pF @ 50 V - - TO-220CFM - 1.92W (Ta), 32.9W (Tc) -55°C ~ 150°C (TJ)
PSMQC060N06LS1-AU_R2_006A1

PSMQC060N06LS1-AU_R2_006A1

60V/ 6M / AECQ101 QUALIFIED / SO

Panjit International Inc.

5,455 -
PSMQC060N06LS1-AU_R2_006A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 68A (Tc) 4.5V, 10V 6mOhm @ 20A, 10V Surface Mount 3V @ 250µA 37 nC @ 10 V 60 V ±20V 2057 pF @ 30 V AEC-Q101 - DFN5060-8 Automotive 50W (Tc) -55°C ~ 150°C (TJ)
AONS66919

AONS66919

N

Alpha & Omega Semiconductor Inc.

2,770 -
AONS66919

数据表

AlphaSGT™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 23A (Ta), 85A (Tc) 4.5V, 10V 5.9mOhm @ 20A, 10V Surface Mount 2.6V @ 250µA 66 nC @ 10 V 100 V ±20V 3420 pF @ 50 V - - 8-DFN (5x6) - 6.2W (Ta), 113W (Tc) -55°C ~ 150°C (TJ)
IPD85P04P4L06ATMA2

IPD85P04P4L06ATMA2

MOSFET P-CH 40V 85A TO252-3

Infineon Technologies

3,644 -
IPD85P04P4L06ATMA2

数据表

OptiMOS™ P2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 85A (Tc) 4.5V, 10V 6.4mOhm @ 85A, 10V Surface Mount 2.2V @ 150µA 104 nC @ 10 V 40 V +5V, -16V 6580 pF @ 25 V - - PG-TO252-3-313 - 88W (Tc) -55°C ~ 175°C (TJ)
XP50AN1K5H

XP50AN1K5H

MOSFET N-CH 500V 5A TO252

YAGEO XSEMI

998 -
XP50AN1K5H

数据表

XP50AN1K5 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.5Ohm @ 2.5A, 10V Surface Mount 4V @ 250µA 24.6 nC @ 10 V 500 V ±30V 800 pF @ 100 V - - TO-252 - 2W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
TJ40S04M3L(T6L1,NQ

TJ40S04M3L(T6L1,NQ

MOSFET P-CH 40V 40A DPAK

Toshiba Semiconductor and Storage

1,754 -
TJ40S04M3L(T6L1,NQ

数据表

U-MOSVI TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40A (Ta) 6V, 10V 9.1mOhm @ 20A, 10V Surface Mount 3V @ 1mA 83 nC @ 10 V 40 V +10V, -20V 4140 pF @ 10 V - - DPAK+ - 68W (Tc) 175°C (TJ)
SISS5110DN-T1-GE3

SISS5110DN-T1-GE3

N-CHANNEL 100 V (D-S) MOSFET POW

Vishay Siliconix

12,000 -
SISS5110DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13.4A (Ta), 46.4A (Tc) 7.5V, 10V 8.9mOhm @ 10A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 100 V ±25V 920 pF @ 50 V - - PowerPAK® 1212-8S - 4.8W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ)
TJ30S06M3L(T6L1,NQ

TJ30S06M3L(T6L1,NQ

MOSFET P-CH 60V 30A DPAK

Toshiba Semiconductor and Storage

4,000 -
TJ30S06M3L(T6L1,NQ

数据表

U-MOSVI TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30A (Ta) 6V, 10V 21.8mOhm @ 15A, 10V Surface Mount 3V @ 1mA 80 nC @ 10 V 60 V +10V, -20V 3950 pF @ 10 V - - DPAK+ - 68W (Tc) 175°C (TJ)
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