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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PSMN3R3-100SSFJ

PSMN3R3-100SSFJ

NEXTPOWER 80/100V MOSFETS

Nexperia USA Inc.

700 -
PSMN3R3-100SSFJ

数据表

- SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 180A (Ta) 7V, 10V 3.3mOhm @ 25A, 10V Surface Mount 4V @ 1mA 159 nC @ 10 V 100 V ±20V 9940 pF @ 50 V - - LFPAK88 (SOT1235) - 341W (Ta) -55°C ~ 175°C (TJ)
MCACL2D5N06YL-TP

MCACL2D5N06YL-TP

MOSFET N-CH 60 140A DFN5060

Micro Commercial Co

9,920 -
MCACL2D5N06YL-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 140A (Tc) 4.5V, 10V 2.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 71 nC @ 10 V 60 V ±20V 4320 pF @ 30 V - - DFN5060 - 114W (Tj) -55°C ~ 150°C (TJ)
IAUAN04S7N008AUMA1

IAUAN04S7N008AUMA1

IAUAN04S7N008AUMA1

Infineon Technologies

2,310 -
IAUAN04S7N008AUMA1

数据表

OptiMOS™ 7 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Ta), 290A (Tj) 7V, 10V 0.82mOhm @ 90A, 10V Surface Mount 3V @ 60µA 78 nC @ 10 V 40 V ±20V 5410 pF @ 20 V AEC-Q101 - PG-HSOF-5-2 Automotive 133W (Tc) -55°C ~ 175°C (TJ)
NTTFS030N10GTAG

NTTFS030N10GTAG

100V MVSOA IN U8FL PACKAGE

onsemi

1,470 -
NTTFS030N10GTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Ta), 35A (Tc) 10V 30mOhm @ 12A, 10V Surface Mount 4V @ 61µA 21.5 nC @ 10 V 100 V ±20V 1366 pF @ 50 V - - 8-WDFN (3.3x3.3) - 2.5W (Ta), 74W (Tc) -55°C ~ 175°C (TJ)
TPH1500CNH1,LQ

TPH1500CNH1,LQ

150V U-MOS VIII-H SOP-ADVANCE(N)

Toshiba Semiconductor and Storage

7,540 -
TPH1500CNH1,LQ

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 38A (Tc) 10V 15.4mOhm @ 19A, 10V Surface Mount 4V @ 1mA - 150 V ±20V 2200 pF @ 75 V - - 8-SOP Advance (5x5.75) - 2.5W (Ta), 170W (Tc) 150°C
IRFR2607ZTRPBF

IRFR2607ZTRPBF

MOSFET N-CH 75V 42A DPAK

Infineon Technologies

5,931 -
IRFR2607ZTRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 42A (Tc) - 22mOhm @ 30A, 10V Surface Mount 4V @ 50µA 51 nC @ 10 V 75 V - 1440 pF @ 25 V - - PG-TO252-3-901|DPAK - - -
RQ3L270BLFRATCB

RQ3L270BLFRATCB

NCH 60V 27A, HSMT8AG, POWER MOSF

Rohm Semiconductor

3,500 -
RQ3L270BLFRATCB

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
RQ3L270BKFRATCB

RQ3L270BKFRATCB

NCH 60V 27A, HSMT8AG, POWER MOSF

Rohm Semiconductor

3,475 -
RQ3L270BKFRATCB

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IRFR220PBF-BE3

IRFR220PBF-BE3

N-CHANNEL 200V

Vishay Siliconix

3,000 -
IRFR220PBF-BE3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.8A (Tc) 10V 800mOhm @ 2.9A, 10V Surface Mount 4V @ 250µA 14 nC @ 10 V 200 V ±20V 260 pF @ 25 V - - TO-252AA - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
IPD90N06S4L05ATMA2

IPD90N06S4L05ATMA2

MOSFET N-CH 60V 90A TO252-31

Infineon Technologies

2,256 -
IPD90N06S4L05ATMA2

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 4.6mOhm @ 90A, 10V Surface Mount 2.2V @ 60µA 110 nC @ 10 V 60 V ±16V 8180 pF @ 25 V AEC-Q101 - PG-TO252-3-11 Automotive 107W (Tc) -55°C ~ 175°C (TJ)
RQ3P270BKFRATCB

RQ3P270BKFRATCB

NCH 100V 27A, HSMT8AG, POWER MOS

Rohm Semiconductor

3,475 -
RQ3P270BKFRATCB

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 27A (Tc) 4.5V, 10V 27mOhm @ 27A, 10V Surface Mount 2.5V @ 1.6mA 13.6 nC @ 10 V 100 V ±20V 670 pF @ 50 V AEC-Q101 - 8-HSMT (3.2x3) Automotive 69W (Tc) 150°C (TJ)
PJQ5594-AU_R2_002A1

PJQ5594-AU_R2_002A1

150V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

3,000 -
PJQ5594-AU_R2_002A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PJQ5968A-AU_R2_002A1

PJQ5968A-AU_R2_002A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
PJQ5968A-AU_R2_002A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
DMTH6005LPSQ-13

DMTH6005LPSQ-13

MOSFET N-CH 60V 100A PWRDI5060

Diodes Incorporated

2,468 -
DMTH6005LPSQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20.6A (Ta), 100A (Tc) 4.5V, 10V 5.5mOhm @ 50A, 10V Surface Mount 3V @ 250µA 47.1 nC @ 10 V 60 V ±20V 2962 pF @ 30 V - - PowerDI5060-8 - 3.2W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
NVTFWS010N10MCLTAG

NVTFWS010N10MCLTAG

MOSFET N-CH 100V 11.7A 8WDFN

onsemi

1,500 -
NVTFWS010N10MCLTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11.7A (Ta), 57.8A (Tc) 4.5V, 10V 10.6mOhm @ 15A, 10V Surface Mount 3V @ 85µA 30 nC @ 10 V 100 V ±20V 2150 pF @ 50 V AEC-Q101 - 8-WDFN (3.3x3.3) Automotive 3.2W (Ta), 77.8W (Tc) -55°C ~ 175°C (TJ)
RD3P02BATTL1

RD3P02BATTL1

PCH -100V -20A POWER MOSFET: RD3

Rohm Semiconductor

1,120 -
RD3P02BATTL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20A (Tc) 6V, 10V 116mOhm @ 10A, 10V Surface Mount 4V @ 1mA 39 nC @ 10 V 100 V ±20V 1480 pF @ 50 V - - TO-252 - 56W (Tc) 150°C (TJ)
DI150N04PQ

DI150N04PQ

MOSFET PWRQFN 5X6 40V 0.0014OHM

Diotec Semiconductor

5,000 -
DI150N04PQ

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150A (Tc) 10V 1.45mOhm @ 75A, 10V Surface Mount 4V @ 250µA 61 nC @ 10 V 40 V ±20V 3950 pF @ 20 V AEC-Q101 - 8-QFN (5x6) Automotive 125W (Tc) -55°C ~ 150°C (TJ)
IRFR9110TRLPBF

IRFR9110TRLPBF

MOSFET P-CH 100V 3.1A DPAK

Vishay Siliconix

3,000 -
IRFR9110TRLPBF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.1A (Tc) 10V 1.2Ohm @ 1.9A, 10V Surface Mount 4V @ 250µA 8.7 nC @ 10 V 100 V ±20V 200 pF @ 25 V - - DPAK - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
IRF7402TRPBF

IRF7402TRPBF

MOSFET N-CH 20V 6.8A 8SO

Infineon Technologies

7,535 -
IRF7402TRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6.8A (Ta) 2.7V, 4.5V 35mOhm @ 4.1A, 4.5V Surface Mount 700mV @ 250µA (Min) 22 nC @ 4.5 V 20 V ±12V 650 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
SI4410DYTRPBF

SI4410DYTRPBF

MOSFET N-CH 30V 10A 8SO

Infineon Technologies

6,720 -
SI4410DYTRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 4.5V, 10V 13.5mOhm @ 10A, 10V Surface Mount 1V @ 250µA 45 nC @ 10 V 30 V ±20V 1585 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
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